1999 Fiscal Year Annual Research Report

ワイドギャップ半導体用の変調分光評価法の開発

Research Project

Project/Area Number	10555004
Research Institution	Kobe University
Principal Investigator	西野種夫神戸大学, 工学部, 教授 (60029452)
Co-Investigator(Kenkyū-buntansha)	渡辺元之浜松ホトニクス株式会社, システム事業部, 専門部員(研究職) 喜多隆神戸大学, 工学部, 助手 (10221186)
Keywords	ワイドギャップ半導体 / 変調分光 / 電子ビーム変調
Research Abstract	本年度は新しい電子線を励起源にもつ超高感度な真空紫外変調分光装置の開発を進め、発光、吸収、反射の光励起下での変調スペクトルの測定方法を確立した。具体的には以下のようなことを達成した。 (1)真空紫外変調分光装置の作製可視域から30nmまでの真空紫外域における変調分光とルミネッセンス分光を実現するため真空紫外分光の遂行に必要な基礎特性を確認した。またこれらをベースに計測システムの構築を行った。 (2)光高密度励起による変調分光測定顕微分光下での変調分光特性を得るため、レーザによる変調を行い赤外域から紫外域にわたる変調反射スペクトル、変調吸収スペクトルを得た。 (3)変調スペクトルの解析と新しい評価技術としての検討変調信号に含まれるバンドパラメター、バンド構造、励起子、歪み、ピエゾ電界、結晶欠陥等に関する情報を引き出すために変調スペクトルの解析手法を確立した。これら一連の研究成果に基づいて、強励起光と電子線源を有する新しいタイプの変調分光評価装置のワイドギャップ半導体評価に向けた有効性を探索した。その結果、この手法を用いた新しい評価方法の確立と実用化へのめどを立てた。

Research Products
(12 results)

All Other

All Publications (12 results)

[Publications] K.Yamashita: "Carrier-Relaxation Process in Time-Resolved Up-Converted Photoluminescence at Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P/GaAs Heterointerface"Jpn.J.Appl.Phys.. Vol.38,No.2B. 1001-1003 (1999)
[Publications] T.Kita: "Dynamic Process of Anti-Stokes Photoluminescence at a Long-Range Orderd Ga_<0.5>In_<0.5>P/GaAs Heterostructure"Phys.Rev.B. Vol.59,No.23. 15358-15362 (1999)
[Publications] T.Kita: "Self-Organized Process of InAs-Quantum Dots Monitored by Reflectance-Difference Spectroscopy"Inst.Phys.Conf.Ser.. No.162,Chapter9. 457-462 (1999)
[Publications] K.Yamashita: "Linear Electrooptic Effect in Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P"J.Appl.Phys.. Vol.86,No.6. 3140-3143 (1999)
[Publications] T.Kita: "Energy Relaxation by Multiphonon Processes in Partially Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P"Proc.11th International Conference on Indium Phosphide and Related Materials,Davos. 159-162 (1999)
[Publications] K.Yamashita: "Relaxation Process of Photoexcited Carriers in GaAs/InAs/GaAs Quantum Structures"Proc.18th Electronic Materials Symposium,Kii-Shirahama. 39-40 (1999)
[Publications] T.Kita: "Reflectance-Difference Spectroscopy of Two-Dimensional InAs duing Stranski-Krastanov Formation of Quantm Dots"Proc.18th Electronic Materials Symposium,Kii-Shirahama. 141-142 (1999)
[Publications] T.Kita: "Dynamic Process of Two-Dimensional InAs Growth in Stranski-Krastanov Mode"Physica E. (in press). (2000)
[Publications] T.Kita: "Time-Resolved Observation of Anti-Stokes Photoluminescence at Ordered Ga_<0.5>In_<0.5>P and GaAs Interfaces"Journal of Luminescence. (in press). (2000)
[Publications] K.Yamashita: "Initial Stages of InAs-Quantum Dots Formation Studies by Reflectance-Difference Spectroscopy and Photoluminescence"Inst.Phys.Conf.Ser.. (in press). (2000)
[Publications] T.Kita: "Self-Assembled Growth of InAs-Quantum Dots and Postgrowth Behavior Studied by Reflectance-Difference Spectroscopy"Applied Surface Science. (in press). (2000)
[Publications] A.Shimizu: "Structual Evolution and Valence-Electron State Change During Ultra Thin Silicon Oxide Growth"Applied Surface Science. (in press). (2000)

1999 Fiscal Year Annual Research Report

ワイドギャップ半導体用の変調分光評価法の開発

Principal Investigator

西野 種夫 神戸大学, 工学部, 教授 (60029452)

Research Products

[Publications] K.Yamashita: "Carrier-Relaxation Process in Time-Resolved Up-Converted Photoluminescence at Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P/GaAs Heterointerface"Jpn.J.Appl.Phys.. Vol.38,No.2B. 1001-1003 (1999)

[Publications] T.Kita: "Dynamic Process of Anti-Stokes Photoluminescence at a Long-Range Orderd Ga_<0.5>In_<0.5>P/GaAs Heterostructure"Phys.Rev.B. Vol.59,No.23. 15358-15362 (1999)

[Publications] T.Kita: "Self-Organized Process of InAs-Quantum Dots Monitored by Reflectance-Difference Spectroscopy"Inst.Phys.Conf.Ser.. No.162,Chapter9. 457-462 (1999)

[Publications] K.Yamashita: "Linear Electrooptic Effect in Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P"J.Appl.Phys.. Vol.86,No.6. 3140-3143 (1999)

[Publications] T.Kita: "Energy Relaxation by Multiphonon Processes in Partially Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P"Proc.11th International Conference on Indium Phosphide and Related Materials,Davos. 159-162 (1999)

[Publications] K.Yamashita: "Relaxation Process of Photoexcited Carriers in GaAs/InAs/GaAs Quantum Structures"Proc.18th Electronic Materials Symposium,Kii-Shirahama. 39-40 (1999)

[Publications] T.Kita: "Reflectance-Difference Spectroscopy of Two-Dimensional InAs duing Stranski-Krastanov Formation of Quantm Dots"Proc.18th Electronic Materials Symposium,Kii-Shirahama. 141-142 (1999)

[Publications] T.Kita: "Dynamic Process of Two-Dimensional InAs Growth in Stranski-Krastanov Mode"Physica E. (in press). (2000)

[Publications] T.Kita: "Time-Resolved Observation of Anti-Stokes Photoluminescence at Ordered Ga_<0.5>In_<0.5>P and GaAs Interfaces"Journal of Luminescence. (in press). (2000)

[Publications] K.Yamashita: "Initial Stages of InAs-Quantum Dots Formation Studies by Reflectance-Difference Spectroscopy and Photoluminescence"Inst.Phys.Conf.Ser.. (in press). (2000)

[Publications] T.Kita: "Self-Assembled Growth of InAs-Quantum Dots and Postgrowth Behavior Studied by Reflectance-Difference Spectroscopy"Applied Surface Science. (in press). (2000)

[Publications] A.Shimizu: "Structual Evolution and Valence-Electron State Change During Ultra Thin Silicon Oxide Growth"Applied Surface Science. (in press). (2000)

西野種夫神戸大学, 工学部, 教授 (60029452)