2001 Fiscal Year Final Research Report Summary
Direct transition type boron-carbon-nitrogen-system semiconductor thin films
| Project/Area Number |
10555006
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
表面界面物性
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| Research Institution | Hirosaki University |
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Principal Investigator |
MASHITA Masao Hirosaki University, Faculty of Science and Technology, Professor, 理工学部, 教授 (30292139)
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| Co-Investigator(Kenkyū-buntansha) |
SUZUKI Yusi Hirosaki University, Faculty of Science and Technology, Associate Professor, 理工学部, 助教授 (50236022)
MIYANAGA Takahumi Hirosaki University, Faculty of Science and Technology, Associate Professor, 理工学部, 助教授 (70209922)
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| Project Period (FY) |
1998 – 2000
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| Keywords | BCN films / direct gap semiconductor / reactive rf-magnetron sputtering / Fourier transform infrared spectroscopy / x-ray photoelectoron spectroscopy / film composition |
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| Research Abstract |
A lot of attention has recently been focused on BCN films because of a possibility of direct gap semiconductors which emits visible light. Several methods have been used to form BCN films such as chemical vapor deposition, laser ablation, reactive sputtering deposition and ion beam assisted deposition.
We have prepared BCN films by reactive rf-magnetron sputtering using N_2-CH_4-Ar mixed gases. The deposited films showed the B-C, B-N, and C-N bonds by x-ray photoelectoron spectroscopy (XPS) and Fourier transform infrared (FT-IR) spectroscopy. The composition and the band gap of BCN films were changed according to by the N_2/CH_4 ratio of mixed gases.
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