1998 Fiscal Year Annual Research Report

超薄膜シリコン量子井戸を含む絶縁ゲートによるInP系超高周波大電力デバイスの実現

Research Project

Project/Area Number	10555098
Research Institution	Hokkaido University
Principal Investigator	長谷川英機北海道大学, 工学研究科, 教授 (60001781)
Co-Investigator(Kenkyū-buntansha)	上田大助松下電子工業(株), 電子総合研究所・第二研究部, 室長(研究職) 藤倉序章北海道大学, 工学研究科, 助教授 (70271640) 橋詰保北海道大学, 量子界面エレクトロニクス研究センター, 助教授 (80149898)
Keywords	電気化学プロセス / ショットキー極限 / 金属 / 半導体界面 / インジウムリン / フェルミ準位ピンニング / パルス法
Research Abstract	マルチメディア高度情報化の今後の進展のためには、キーデバイスのより高い周波数帯への移行が必須であり、このため、従来のGaAs系デバイスにかわって、より優れた超高周波性能を持つInP系デバイスが注目を浴びている。しかし、InP系デバイスには、ショットキー障壁高が低くMESFETが作れないという弱点がある。本研究では、本研究グループにおいて有用性が予備的に確認された「シリコン超薄膜量子井戸を含む新しい絶縁ゲート構造」を用いることにより、この弱点を克服し、InP系超高周波大電力デバイス実現に突破口を開くことを目的とする。得られた主な成果を以下にまとめる。 (1)シリコン界面制御層の成長機構をin-situ STM観察とRHEED観察によって詳細に検討し、化合物半導体初期表面状態とSi超薄層の成長過程、平坦性、電子状態に密接な関連があることを明らかにした。(2)n-InPに対して、シリコン超薄膜量子井戸を含む絶縁ゲート構造形成プロセスの最適化を検討した。1)まず、モデル固体理論によりSiN-Si-InPのバンド構造を決定し、それに基づいて、Si層の膜厚に対する量子準位を計算した。その結果、Si層の膜厚を0.75nm以下にすることによって、量子閉じ込め効果によりSi量子井戸から量子準位を追い出すことによりInPギャップ内の界面準位を全て除去できることを明かにした。2)次に、この構造を達成するために、1nmSi層を分子線エピタキシー法により成長し、その表面を電子サイクロトロン共鳴励起の窒素プラズマにより窒化するというプロセスを開発した。また、X線電子分光法と独自に開発した「超高真空対応非接触電圧-容量測定システム」を駆使したプロセスステップ毎のin-situ評価により、ナノメートル領域で制御された、SiN/Si/n-InP構造を実現し、最小界面準位密度2x10^<10>cm^<-2>eV^<-1>のMIS構造を達成した。 (3)スパッタ法により形成したTi/n-InP溝造の界面反応を、オージェ電子分光法、X線電子分光法、X線回折法により詳細に評価し、電気的特性との相関を含めオーミック電極形成機構の検討を行った。500℃前後の短時間熱処理によってTi-P化合物相が界面に生成することにより良好なオーミック性を示すことが明らかになった。 (4)絶縁ゲート型InGaAs/InAlAs HEMTを試作し、その電流輸送特性を評価した。Si界面制御層を含まない絶縁ゲート型HEMTと比較して、Si界面制御技術を適用したHEMTの伝達コンダクタンスは20倍以上向上し、本プロセスが、絶縁ゲート型超高速・超低消費電力HEMTの実現に有望であることが示された。

Research Products
(38 results)

All Other

All Publications (38 results)

[Publications] H.Hasegawa: "Electrochemical formation and characterization of Schottky in-plane and wrap gate structures for realization of GaAs- and InP-based quantum wires and dots" Applied Surface Science. 123/124. 335 (1998)
[Publications] T.Hashizume: "Surface passivation of GaAs with ultrathin Si_3Ni_4/Si interface control layer formed by MBE and in situ ECR plasma nitridation" Applied Surface Science. 123/124. 599 (1998)
[Publications] H.Takahashi: "Novel InP metal-insulator-semiconductor structure having an ultrathin silicon interface control layer"" Applied Surface Science. 123/124. 615 (1998)
[Publications] B.Adamowicz: "Photoluminescence characterization of air exposed AlGaAs surface and passivated ex situ by ultrathin silicon interface control layer" Physica E. 2. 261 (1998)
[Publications] N.Tsurumi: "In-Situ Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs(001)-(2x4)Surface" Japanese Journal of Applied Physics. 37. 1501 (1998)
[Publications] Y.Satoh: "Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG" Japanese Journal of Applied Physics. 37. 1584 (1998)
[Publications] H.Fujikura: "Controlled Formation of Narrow and Uniform InP-Based In_<0.53>Ga_<0.47>As Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 37. 1532 (1998)
[Publications] T.Hashizume: "In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown(2x4) GaAs Surfaces" Japanese Journal of Applied Physics. 37. 1626 (1998)
[Publications] B.Adamowicz: "Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surfaces and Behavior of Surface Recombination Velocity" Japanese Journal of Applied Physics. 37. 1631 (1998)
[Publications] Y.Hanada: "Direct Formation of InGaAs Coupled Quantum Wire-Dot Structures by Selective Molecular Beam Expitaxy on InP Patterned Substrates" Solid State Electronics. 42. 1413 (1998)
[Publications] H.Okada: "A Novel Wrap-Gate-Controlled Single Electron Transistor Formed on an InGaAs Ridge Quantum Wire Grown by Selective MBE" Solid State Electronics. 42. 1419 (1998)
[Publications] S.Chakraborty: "Formation of ultrathin oxynitride layers on Si(100) by low-temperature electron cyclotron resonance N_2O plasma oxynitridation process" Journal of Vacuum Science and Technology. B16. 2159 (1998)
[Publications] Y.Ishikawa: "Scanning tunneling microscopy and x-ray photoelectron spectroscopy studies of atomic level structure and Fermi level pinning on GaAs(110) surfaces grown by molecular beam epitaxy" Journal of Vacuum Science and Technology. B16. 2387 (1998)
[Publications] Y.Sato: "Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Three Schottky Wrap Gates" Japanese Journal of Applied Physics,. 38(in press). (1999)
[Publications] H.Fujikura: "Control of Dot Size and Tunneling Barrier Profile in In_<0.53>Ga_<0.47>As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates" Japanese Journal of Applied Physics,. 38(in press). (1999)
[Publications] T.Muranaka: "Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates" Japanese Journal of Applied Physics,. 38(in press). (1999)
[Publications] H.Fujikura: "Extra-Side-Facet Control in Selective Molecular Beam Epitaxial Growth of InGaAs Ridge Quantum Wires for Improvement of Wire Uniformity" Japanese Journal of Applied Physics,. 38(in press). (1999)
[Publications] M.B.Takeyama: "Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP" Japanese Journal of Applied Physics,. 38(in press). (1999)
[Publications] T.Sato: "Strong Correlation Between Interface Microstructure and Barrier Height in n-InP Schottky Contacts Formed by In Situ Electrochemical Process" Japanese Journal of Applied Physics,. 38(in press). (1999)
[Publications] C.Kaneshiro: "Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes" Japanese Journal of Applied Physics,. 38(in press). (1999)
[Publications] H.Takahashi: "XPS and UHV Contactless C-V Characterization of Novel Oxide-Free InP Passivation Process Using Silicon Surface Quantum Well" Japanese Journal of Applied Physics,. 38(in press). (1999)
[Publications] H.Fujikura: "Formation of Highly Uniform InGaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy on Novel InP Patterned Substrates" Thin Solid Film,. (in press). (1999)
[Publications] H.Fujikura: "Selective MBE Growth of Quantum Wire-Dot Coupled Structures with Novel High Index Facets for InGaAs Single Electron Transistor Arrays" Microelectronics,. (in press). (1999)
[Publications] J.Nakamura: "Transport Properties of Schottky In-Plane-Gate GaAs Single and Coupled Quantum Wire Transistors" IOP conference series,. (in press). (1999)
[Publications] N.Ono: "N.Ono,H.Fujikura and H.Hasegawa:"Study of Selective MBE Growth on Patterned (001) InP Substrates Toward Realization of <100>-Oriented InGaAs Ridge Quantum Wires" IOP conference seriesc,. (in press). (1999)
[Publications] C.Kaneshiro: "Realization of Strongly Metal-Dependent Schottky Barrier Heights on n-GaAs by In Situ Electrochemical Process" IOP conference series,. (in press). (1999)
[Publications] T.Muranaka: "Realization of InP-Based InGaAs Single Electron Transistors on Wires and Dots Grown by Selective MBE" Microelectronic Engineering,. (in press). (1999)
[Publications] H.Okada: "GaAs-Based Single Electron Logic and Memory Devies Using Electro-Deposited Nanometer Schottky Gates" Microelectronic Engineering,. (in press). (1999)
[Publications] H.Sai: "Growth of Device Quality InGaP/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy using Tertiarybutylphosphine" Solid State Electroncs,. (in press). (1999)
[Publications] H.Sai: "Study of Reflection High-Energy Electron Diffraction Oscillation for Optimization of Tertiarybutylphosphine-Based Molecular Beam Epitaxial Growth of In_<0.48>Ga_<0.52>P on GaAs" Japanese Journal of Applied Physics,. 38(in press). (1999)
[Publications] H.Sai: "H.Sai,H.Fujikura and H.Hasegawa:"Gas Source Molecular Beam Epitaxial Growth of In_<1-x>Ga_xP on GaAs Using Tertiarybutylphosphine" Japanese Journal of Applied Physics,. 38(in press). (1999)
[Publications] H.Hasegawa: "Properties of Metal-Semiconductro Interfaces Formed on n-type GaN" Japanese Journal of Applied Physics,. 38(in press). (1999)
[Publications] T.Sato: "Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Depositionc" Japanese Journal of Applied Physics,. 38(in press). (1999)
[Publications] T.Yoshida: "A Novel Non-Destructive Characterization Method of Electronic Properties of Pre- and Post-Processing Silicon Surfaces Based on Ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements" Japanese Journal of Applied Physics,. 38(in press). (1999)
[Publications] M.Mutoh: "Effects of Initial Surface Reconstruction on Silicon Interface Control Layer Based Passivation of(001) GaAs Surfaces Studied in an Ultrahigh-Vacuum Multichamber System" Japanese Journal of Applied Physics,. 38(in press). (1999)
[Publications] H.Takahashi: "In-situ Characterization Technique of Compound Semiconductor Heterostructure Growth and Device Processing Steps Based on UHV Contactless Capacitance-Voltage Measurement" Solid-State Electron.,. (in press). (1999)
[Publications] Y.Koyama: "Formation Processes and Properties of Schottky and Ohmic Contacts on n-type GaN form Field Effect Transistor Applications" Solid-State Electron.,. (in press). (1999)
[Publications] A.Hamamatsu: "Formation of <001>-Aligned Nano-Scale Pores on (001) n-InP Surfaces by Photoelectrochemical Anodization in HCI" Journal of Electroanalytical Chemistry,. (in press). (1999)

1998 Fiscal Year Annual Research Report

超薄膜シリコン量子井戸を含む絶縁ゲートによるInP系超高周波大電力デバイスの実現

Principal Investigator

長谷川 英機 北海道大学, 工学研究科, 教授 (60001781)

Research Products

[Publications] H.Hasegawa: "Electrochemical formation and characterization of Schottky in-plane and wrap gate structures for realization of GaAs- and InP-based quantum wires and dots" Applied Surface Science. 123/124. 335 (1998)

[Publications] T.Hashizume: "Surface passivation of GaAs with ultrathin Si_3Ni_4/Si interface control layer formed by MBE and in situ ECR plasma nitridation" Applied Surface Science. 123/124. 599 (1998)

[Publications] H.Takahashi: "Novel InP metal-insulator-semiconductor structure having an ultrathin silicon interface control layer"" Applied Surface Science. 123/124. 615 (1998)

[Publications] B.Adamowicz: "Photoluminescence characterization of air exposed AlGaAs surface and passivated ex situ by ultrathin silicon interface control layer" Physica E. 2. 261 (1998)

[Publications] N.Tsurumi: "In-Situ Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs(001)-(2x4)Surface" Japanese Journal of Applied Physics. 37. 1501 (1998)

[Publications] Y.Satoh: "Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG" Japanese Journal of Applied Physics. 37. 1584 (1998)

[Publications] H.Fujikura: "Controlled Formation of Narrow and Uniform InP-Based In_<0.53>Ga_<0.47>As Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 37. 1532 (1998)

[Publications] T.Hashizume: "In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown(2x4) GaAs Surfaces" Japanese Journal of Applied Physics. 37. 1626 (1998)

[Publications] B.Adamowicz: "Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surfaces and Behavior of Surface Recombination Velocity" Japanese Journal of Applied Physics. 37. 1631 (1998)

[Publications] Y.Hanada: "Direct Formation of InGaAs Coupled Quantum Wire-Dot Structures by Selective Molecular Beam Expitaxy on InP Patterned Substrates" Solid State Electronics. 42. 1413 (1998)

[Publications] H.Okada: "A Novel Wrap-Gate-Controlled Single Electron Transistor Formed on an InGaAs Ridge Quantum Wire Grown by Selective MBE" Solid State Electronics. 42. 1419 (1998)

[Publications] S.Chakraborty: "Formation of ultrathin oxynitride layers on Si(100) by low-temperature electron cyclotron resonance N_2O plasma oxynitridation process" Journal of Vacuum Science and Technology. B16. 2159 (1998)

[Publications] Y.Ishikawa: "Scanning tunneling microscopy and x-ray photoelectron spectroscopy studies of atomic level structure and Fermi level pinning on GaAs(110) surfaces grown by molecular beam epitaxy" Journal of Vacuum Science and Technology. B16. 2387 (1998)

[Publications] Y.Sato: "Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Three Schottky Wrap Gates" Japanese Journal of Applied Physics,. 38(in press). (1999)

[Publications] H.Fujikura: "Control of Dot Size and Tunneling Barrier Profile in In_<0.53>Ga_<0.47>As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates" Japanese Journal of Applied Physics,. 38(in press). (1999)

[Publications] T.Muranaka: "Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates" Japanese Journal of Applied Physics,. 38(in press). (1999)

[Publications] H.Fujikura: "Extra-Side-Facet Control in Selective Molecular Beam Epitaxial Growth of InGaAs Ridge Quantum Wires for Improvement of Wire Uniformity" Japanese Journal of Applied Physics,. 38(in press). (1999)

[Publications] M.B.Takeyama: "Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP" Japanese Journal of Applied Physics,. 38(in press). (1999)

[Publications] T.Sato: "Strong Correlation Between Interface Microstructure and Barrier Height in n-InP Schottky Contacts Formed by In Situ Electrochemical Process" Japanese Journal of Applied Physics,. 38(in press). (1999)

[Publications] C.Kaneshiro: "Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes" Japanese Journal of Applied Physics,. 38(in press). (1999)

[Publications] H.Takahashi: "XPS and UHV Contactless C-V Characterization of Novel Oxide-Free InP Passivation Process Using Silicon Surface Quantum Well" Japanese Journal of Applied Physics,. 38(in press). (1999)

[Publications] H.Fujikura: "Formation of Highly Uniform InGaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy on Novel InP Patterned Substrates" Thin Solid Film,. (in press). (1999)

[Publications] H.Fujikura: "Selective MBE Growth of Quantum Wire-Dot Coupled Structures with Novel High Index Facets for InGaAs Single Electron Transistor Arrays" Microelectronics,. (in press). (1999)

[Publications] J.Nakamura: "Transport Properties of Schottky In-Plane-Gate GaAs Single and Coupled Quantum Wire Transistors" IOP conference series,. (in press). (1999)

[Publications] N.Ono: "N.Ono,H.Fujikura and H.Hasegawa:"Study of Selective MBE Growth on Patterned (001) InP Substrates Toward Realization of <100>-Oriented InGaAs Ridge Quantum Wires" IOP conference seriesc,. (in press). (1999)

[Publications] C.Kaneshiro: "Realization of Strongly Metal-Dependent Schottky Barrier Heights on n-GaAs by In Situ Electrochemical Process" IOP conference series,. (in press). (1999)

[Publications] T.Muranaka: "Realization of InP-Based InGaAs Single Electron Transistors on Wires and Dots Grown by Selective MBE" Microelectronic Engineering,. (in press). (1999)

[Publications] H.Okada: "GaAs-Based Single Electron Logic and Memory Devies Using Electro-Deposited Nanometer Schottky Gates" Microelectronic Engineering,. (in press). (1999)

[Publications] H.Sai: "Growth of Device Quality InGaP/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy using Tertiarybutylphosphine" Solid State Electroncs,. (in press). (1999)

[Publications] H.Sai: "Study of Reflection High-Energy Electron Diffraction Oscillation for Optimization of Tertiarybutylphosphine-Based Molecular Beam Epitaxial Growth of In_<0.48>Ga_<0.52>P on GaAs" Japanese Journal of Applied Physics,. 38(in press). (1999)

[Publications] H.Sai: "H.Sai,H.Fujikura and H.Hasegawa:"Gas Source Molecular Beam Epitaxial Growth of In_<1-x>Ga_xP on GaAs Using Tertiarybutylphosphine" Japanese Journal of Applied Physics,. 38(in press). (1999)

[Publications] H.Hasegawa: "Properties of Metal-Semiconductro Interfaces Formed on n-type GaN" Japanese Journal of Applied Physics,. 38(in press). (1999)

[Publications] T.Sato: "Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Depositionc" Japanese Journal of Applied Physics,. 38(in press). (1999)

[Publications] T.Yoshida: "A Novel Non-Destructive Characterization Method of Electronic Properties of Pre- and Post-Processing Silicon Surfaces Based on Ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements" Japanese Journal of Applied Physics,. 38(in press). (1999)

[Publications] M.Mutoh: "Effects of Initial Surface Reconstruction on Silicon Interface Control Layer Based Passivation of(001) GaAs Surfaces Studied in an Ultrahigh-Vacuum Multichamber System" Japanese Journal of Applied Physics,. 38(in press). (1999)

[Publications] H.Takahashi: "In-situ Characterization Technique of Compound Semiconductor Heterostructure Growth and Device Processing Steps Based on UHV Contactless Capacitance-Voltage Measurement" Solid-State Electron.,. (in press). (1999)

[Publications] Y.Koyama: "Formation Processes and Properties of Schottky and Ohmic Contacts on n-type GaN form Field Effect Transistor Applications" Solid-State Electron.,. (in press). (1999)

[Publications] A.Hamamatsu: "Formation of <001>-Aligned Nano-Scale Pores on (001) n-InP Surfaces by Photoelectrochemical Anodization in HCI" Journal of Electroanalytical Chemistry,. (in press). (1999)

長谷川英機北海道大学, 工学研究科, 教授 (60001781)