1999 Fiscal Year Final Research Report Summary
Trial manufacturing of nanometer-scale-area photocurrent response measurement apparatus under local and resonant photoexcitation
| Project/Area Number |
10555106
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | KYUSHU INSTITUTE OF TECHNOLOGY |
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Principal Investigator |
FIJIWARA Kenzo Kyushu Institute of Technology, Dept. of Electrical Engineering, Professor, 工学部, 教授 (90243980)
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| Co-Investigator(Kenkyū-buntansha) |
SATO Kazuo Kyushu Institute of Technology, Dept. of Electrical Engineering, Assistant, 工学部, 助手 (30315163)
TAKEUCHI Misaichi Kyushu Institute of Technology, Dept. of Electrical Engineering, Assistant, 工学部, 助手 (60284585)
KAWASHIMA Kenji Kyushu Institute of Technology, Dept. of Electrical Engineering, Associate Professor, 工学部, 助教授 (50284584)
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| Project Period (FY) |
1998 – 1999
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| Keywords | tuneling / photocurrent / local probe / GaAs / quantum well / scanning tunneling microscopy (STM) / photo-electric effect / photo-excited carrier transport |
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| Research Abstract |
In order to develop a research tool as a new evaluation method of quantum transport phenomena in semiconductor nano-devices, trial manufacturing of a nanometer-scale-area photocurrent response measurement apparatus has been made as a highly sensitive means of detecting photocurrent signals flowing in very small areas of semiconductors with high spatial resolution under local and resonant photo-excitation conditions. Use of a STM tip as a local photocurrent pick-up has been demonstrated to allow detection of the tunneling current due to photo-excited carriers generated in the very small area. Furthermore, utilizing the resonant photo-absorption effects on the optical absorption processes, it is clarified that locally generated photocurrent signals can be detected with high spatial resolution. Following results are obtained by this study.
l. Trial fabrication of the apparatus and measurements of photo-induced tunneling current
Measurements of the photo-induced tunneling currents in proportional to the illumination power have been made and clarified using the prototype apparatus.
2. Photocurrent measurements using local photo-excitation
Position dependent photocurrent measurements have been verified on cleaved cross-section of superlattice samples using the prototype apparatus with a scanning microprobe light source.
3. Local photocurrent measurements of superlattice cross-section
Using the prototype apparatus with both macroscopic and microscopic scanning systems, it is demonstrated that two-dimensional photocurrent images of the semi-insulating superlattice cleaved cross-section can be measured with the expected periodic structure based on the photo-induced photocurrent measurements.
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