2000 Fiscal Year Annual Research Report

次世代不揮発性メモリー実用化のための界面還元修飾法の応用

Research Project

Project/Area Number	10555220
Research Institution	Osaka Prefecture University
Principal Investigator	伊藤太一郎大阪府立大学, 工学研究科, 教授 (10081366)
Co-Investigator(Kenkyū-buntansha)	神澤公ローム(株), VLSI研究開発部, 課長芦田淳大阪府立大学, 工学研究科, 助手 (60231908) 藤村紀文大阪府立大学, 工学研究科, 助教授 (50199361)
Keywords	YMnO_3 / Y_2O_3 / Siキャパシタ / 強誘電体FET / 強誘電体メモリ / 界面還元修飾法 / エピタキシャル構造
Research Abstract	強誘電体を用いた半導体不揮発性メモリは、DRAMやSRAM並みの速度とフラッシュメモリに代表される不揮発性を併せ持つ夢のメモリとして期待されすでに低容量のものは実用化されている。このような強誘電体の蓄積電荷(分極反転電流)を用いたFeRAMと呼ばれるタイプのメモリに比べて半導体のスケーリング則が成り立ち、大容量化および低消費電力化が可能であるFETタイプのメモリ(Ferro-FET)は、次世代デバイスとして期待されているもののまだ物質探索の域を出ていない。その原因としてFerro-FETの動作原理がFeRAMのそれとは全く異なるためである。本研究では最初に、Ferro-FETを具現化するため強誘電体物質に必要な物性値を議論し、新物質を探索する指針を議論した。物質選定されたYMnO_3/Y_2O_3/Si構造の特性と問題点その解決法を明らかにするとともに、界面還元修飾法を用いて、Y_2O_3/Siエピタキシャル構造を作成した。同時にYMnO_3薄膜の成長の最適化をすすめた。最終的に1万秒以上の保持時間を有するYMnO_3/Y_2O_3/Siキャパシタを作成することに成功した。

Research Products

(17 results)

All Other

All Publications (17 results)

[Publications] T.Shimura,N.Fujimura,S.Yamamori,T.Yoshimura,and T.Ito: "Effect of Stoichiometry and A-site Substitution on the Electrical Properties of Ferroelectric YMnO_3"Jpn.J.Appl.Phys.. 37. 5280 (1998)
[Publications] T.Yoshimura,N.Fujimura,and T.Ito: ""Ferroelectric Properties of c-Oriented YMnO_3 Thin Films Deposited on Si Substrates"Appl.Phys.Lett.. 73. 414 (1998)
[Publications] T.Yoshimura,N.Fujimura,N.Aoki,K.Hokayama,S.Tukui,K.Kawabata,and T.Ito: "Growth and Properties of YMnO_3 Thin Films for Nonvolatile Memories"J.Kore.Phys.Soc.. 32. S1632 (1998)
[Publications] H.Kitahata,K.Tadanaga,T.minami,N.Fujimura,and T.Ito: "Microstructure and Dielectric Properties of YMnO_3 Thin Films Prepared by Dip-Coating",J.Am.Ceram.Soc.81,1357(1998). 81. 1357 (1998)
[Publications] K.Tadanaga,H.Kitahata,T.minami,N.Fujimura,and T.Ito: "Preparation and Dielectric Properties of YMnO_3 Ferroelectric Thin Films by the Sol-Gel Method"J.Sol-Gel.Sci.Tech.. 13. 903 (1998)
[Publications] K.Tadanaga,H.Kitahata,T.minami,N.Fujimura,and T.Ito: "Preparation and Dielectric Properties of YMnO_3 Ferroelectric Thin Films by the Sol-Gel Method"J.Sol-Gel.Sci.Tech.. 13. 903 (1998)
[Publications] N.Fujimura,T.Yoshimura,D.Ito and T.Ito: "YMnO_3 and YbMnO_3 Thin Films for FET type FeRAM Application"Symposia Proc.of Materials Research Society. 574. ,237 (1999)
[Publications] T.Yoshimura,N.Fujimura,D.Ito and T.Ito: "Detailed C-V Analysis for YbMnO_3/Y_2O_3/Si Structure"Symposia Proc.of Materials Research Society. 574. 359 (1999)
[Publications] H.Kitahata,K.Tadanaga,T.Minami,N.Fujimura,and T.Ito: "Ferroelectricity of YMnO_3 thin Films Prepared via Solution"Appl.Phys.Lett.. 75. 719 (1999)
[Publications] H.Kitahata,K.Tadanaga,T.Minami,N.Fujimura,and T.Ito: "Lowering the Crystallization Temperature of YMnO_3 Thin films by the Sol-Gel Method Using Yttrium Alkoxide"Jpn.J.Appl.Phys.. 38. 5448 (1999)
[Publications] T.Yoshimura,N.Fujimura,D.Ito and T.Ito: "Characterization of ferroelectricity in metal/ferroelectric/insulator/semiconductor structure by pulsed C-V measurement ; Ferroelectricity in YMnO_3/Y_2O_3/Si structure"J.Appl.Phys.. 87. 3444 (2000)
[Publications] D.Ito,N.Fujimura,and T.Ito,: "Initial stage of thin film growth of pulsed laser deposited YMnO_3 thin film"Jpn.J.Appl.Phys.. 39. 5525 (2000)
[Publications] K.Tadanaga,H.Kitahata,T.minami,N.Fujimura,and T.Ito: "Preparation and Ferroelectric Properties of YMnO_3 Thin Films With c-Axis Preferred Orientation by the Sol-Gel Method"J.Sol-Gel Sci.tech. 19. 589 (2000)
[Publications] D.Ito,T.Yoshimura,N.Fujimura,and T.Ito,: "Improvement of Y_2O_3/Si interface for FeRAM application"Appl.Sur.Sci.. 159. 138 (2000)
[Publications] N.Fujimura,T.Yoshimura,D.Ito and T.Ito: "Evaluation of Ferroelectricity in MFIS Type Capacitor Using Pulsed C-V Measurement"Symposia Proc.of Materials Research Society. 596,407(2000). 596. 407 (2000)
[Publications] H.Kitahata,K.Tadanaga,T.Minami,N.Fujimura,and T.Ito: "Origin of Leakage Current of YMnO_3 Thin Films Prepared by the Sol-Gel Method"Symposia Proc.of Materials Research Society. 596. 481 (2000)
[Publications] N.Fujimura,T.Yoshimura,D.Ito,T.Shimura and T.Ito: "Any candidates of ferroelectric material for transistor type FeRAM?"Applied Physics A,. (In press). (2000)

2000 Fiscal Year Annual Research Report

次世代不揮発性メモリー実用化のための界面還元修飾法の応用

Principal Investigator

伊藤 太一郎 大阪府立大学, 工学研究科, 教授 (10081366)

Research Products

[Publications] T.Shimura,N.Fujimura,S.Yamamori,T.Yoshimura,and T.Ito: "Effect of Stoichiometry and A-site Substitution on the Electrical Properties of Ferroelectric YMnO_3"Jpn.J.Appl.Phys.. 37. 5280 (1998)

[Publications] T.Yoshimura,N.Fujimura,and T.Ito: ""Ferroelectric Properties of c-Oriented YMnO_3 Thin Films Deposited on Si Substrates"Appl.Phys.Lett.. 73. 414 (1998)

[Publications] T.Yoshimura,N.Fujimura,N.Aoki,K.Hokayama,S.Tukui,K.Kawabata,and T.Ito: "Growth and Properties of YMnO_3 Thin Films for Nonvolatile Memories"J.Kore.Phys.Soc.. 32. S1632 (1998)

[Publications] H.Kitahata,K.Tadanaga,T.minami,N.Fujimura,and T.Ito: "Microstructure and Dielectric Properties of YMnO_3 Thin Films Prepared by Dip-Coating",J.Am.Ceram.Soc.81,1357(1998). 81. 1357 (1998)

[Publications] K.Tadanaga,H.Kitahata,T.minami,N.Fujimura,and T.Ito: "Preparation and Dielectric Properties of YMnO_3 Ferroelectric Thin Films by the Sol-Gel Method"J.Sol-Gel.Sci.Tech.. 13. 903 (1998)

[Publications] K.Tadanaga,H.Kitahata,T.minami,N.Fujimura,and T.Ito: "Preparation and Dielectric Properties of YMnO_3 Ferroelectric Thin Films by the Sol-Gel Method"J.Sol-Gel.Sci.Tech.. 13. 903 (1998)

[Publications] N.Fujimura,T.Yoshimura,D.Ito and T.Ito: "YMnO_3 and YbMnO_3 Thin Films for FET type FeRAM Application"Symposia Proc.of Materials Research Society. 574. ,237 (1999)

[Publications] T.Yoshimura,N.Fujimura,D.Ito and T.Ito: "Detailed C-V Analysis for YbMnO_3/Y_2O_3/Si Structure"Symposia Proc.of Materials Research Society. 574. 359 (1999)

[Publications] H.Kitahata,K.Tadanaga,T.Minami,N.Fujimura,and T.Ito: "Ferroelectricity of YMnO_3 thin Films Prepared via Solution"Appl.Phys.Lett.. 75. 719 (1999)

[Publications] H.Kitahata,K.Tadanaga,T.Minami,N.Fujimura,and T.Ito: "Lowering the Crystallization Temperature of YMnO_3 Thin films by the Sol-Gel Method Using Yttrium Alkoxide"Jpn.J.Appl.Phys.. 38. 5448 (1999)

[Publications] T.Yoshimura,N.Fujimura,D.Ito and T.Ito: "Characterization of ferroelectricity in metal/ferroelectric/insulator/semiconductor structure by pulsed C-V measurement ; Ferroelectricity in YMnO_3/Y_2O_3/Si structure"J.Appl.Phys.. 87. 3444 (2000)

[Publications] D.Ito,N.Fujimura,and T.Ito,: "Initial stage of thin film growth of pulsed laser deposited YMnO_3 thin film"Jpn.J.Appl.Phys.. 39. 5525 (2000)

[Publications] K.Tadanaga,H.Kitahata,T.minami,N.Fujimura,and T.Ito: "Preparation and Ferroelectric Properties of YMnO_3 Thin Films With c-Axis Preferred Orientation by the Sol-Gel Method"J.Sol-Gel Sci.tech. 19. 589 (2000)

[Publications] D.Ito,T.Yoshimura,N.Fujimura,and T.Ito,: "Improvement of Y_2O_3/Si interface for FeRAM application"Appl.Sur.Sci.. 159. 138 (2000)

[Publications] N.Fujimura,T.Yoshimura,D.Ito and T.Ito: "Evaluation of Ferroelectricity in MFIS Type Capacitor Using Pulsed C-V Measurement"Symposia Proc.of Materials Research Society. 596,407(2000). 596. 407 (2000)

[Publications] H.Kitahata,K.Tadanaga,T.Minami,N.Fujimura,and T.Ito: "Origin of Leakage Current of YMnO_3 Thin Films Prepared by the Sol-Gel Method"Symposia Proc.of Materials Research Society. 596. 481 (2000)

[Publications] N.Fujimura,T.Yoshimura,D.Ito,T.Shimura and T.Ito: "Any candidates of ferroelectric material for transistor type FeRAM?"Applied Physics A,. (In press). (2000)

伊藤太一郎大阪府立大学, 工学研究科, 教授 (10081366)