1999 Fiscal Year Final Research Report Summary
Dynamic Behavior of Radiation-induced Defects in Silicon Crystal and Its Application to Semiconductor Technology
| Project/Area Number |
10650013
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | KYUSHU UNIVERSITY |
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Principal Investigator |
SADOH Taizoh Kyushu University, Department of Electronic Device Engineering, Associate Professor, 大学院・システム情報科学研究科, 助教授 (20274491)
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| Co-Investigator(Kenkyū-buntansha) |
KENJO Atsushi Kyushu Umiversity, Department of Electronic Device Engineering, Research Associate, 大学院・システム情報科学研究科, 助手 (20037899)
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| Project Period (FY) |
1998 – 1999
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| Keywords | Silicon / Ion-beam / Rradiation-induced defect / Silicidation / Crystallization / Oxidation |
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| Research Abstract |
Dynamic behaviors of defects induced by irradiation with low-energy ions have been investigated, and the energy released during relaxation of the defects has been utilized for semiconductor processing at low temperatures.
First, relaxation characteristics of the defects were evaluated by using pulsed ion-beams. Second, in order to demonstrate the low-temperature processing technology which utilized energy released during the relaxation of defects, the growth characteristics for the ion-assisted oxidation was systematically studied, and a guideline for the optimum processing conditions was presented. The results are summarized as follows:
1. Defects induced by irradiation with argon ions at 25 ke V in 600 nm silicon crystal films recover within 1 μ sec.
2. Defects induced by irradiation with argon ions at 25 ke V in 25 nm cobalt-disilicide films recover within 200 μ sec.
3. In the ion-assisted oxidation in an argon and oxygen mixed ECR plasma, atomic vibrations are exited near the substrate surface, which enhances oxidation. The irradiation damage in the oxide films is reduced by applying positive bias to the substrate. It has been demonstrated that high-quality oxide films can be formed by the ion-assisted oxidation at 130℃.
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