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1999 Fiscal Year Final Research Report Summary

The Study of Light-induced Expansion in Hydrogenated Amorphous Silicon with Photodegradation

Research Project

Project/Area Number 10650304
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionGifu University

Principal Investigator

NONOMURA Shuichi  Faculty of Engineering, Gifu University, Professor, 工学部, 教授 (80164721)

Co-Investigator(Kenkyū-buntansha) NITTA Shoji  Faculty of Engineering, Gifu University, Professor, 工学部, 教授 (90021584)
ITOH Takashi  Faculty of Engineering, Gifu University, Associate Professor, 工学部, 助教授 (00223157)
YOSHIDA Norimitsu  Faculty of Engineering, Gifu University, Associate Professor, 工学部, 助教授 (70293545)
Project Period (FY) 1998 – 1999
KeywordsLight-induced expansion / Hydrogenated amorphous silicon / Photodegradation / Laser optical-lever bending method / Amorphous lattice relaxzation / Initial stress / Microcrystalline silicon / Coefficient of linear expansion
Research Abstract

We have developed the laser optical-lever bending method for the sensitive detection of small volume changes of thin semiconductor films. The obtained sensitivity of the normalized volume change was ΔV/V〜2x10 ィイD1-7ィエD1. Using this method, the light-induced expansion of ΔV/V= 10ィイD1-6ィエD1〜10ィイD1-4ィエD1 by light exposure over 100 mW/cmィイD12ィエD1 was found in hydrogenated amorphous silicon (a-Si:H)films. This light-induced volume expansions for the light exposure time over 3days and the light intensity show the correlation with the light-induced defect creations. The observed lattice expansion was a reproducible phenomenon with thermal annealing at 〜150C and has no correlation with the initial stress produced by a quratz substrate. The method for the coefficient of linear expansion has been developed and the estimated rizing temperature during the light exposure was 〜50C. We have pointed out that the light-induced expansion is a unique phenomenon of an a-Si:H itself and the light-induced d … More efect creation is resulted from structural changes of an amorphous network.
The light-induced expansion has been investigated with various deposition conditions for a-Si:H. The hydrogen dilution ratio r with SiHィイD24ィエD2 was studied. The light-induced expansion shows maximum value at r〜10 in a-Si:H films. But the microcrystalline silicon film (μc-Si:H) at r〜40 has no light-induced exansion and no light-induced defect creation. We have optimized the deposition speed, 6 nm/min, for μc-Si:H using conventional deposition method with 13.56 MHz RF power. Futhermore, we developed the new deposition method, hot-wire assisted chemical vapor deposition, which has advantage for the controll of hydrogen radicals.
The laser optical-lever bending method has applied with the evaluation of optical absorption coefficient spectra of a-Si:H films. The developed spectroscopy, the photothermal bending spectroscopy, has a high sensitivity with αd〜5x10ィイD1-5ィエD1. We have demonstrated advantages for determing the optical gap energy, defect density, impurity density, hydrogen density. Less

  • Research Products

    (16 results)

All Other

All Publications (16 results)

  • [Publications] 嶋川晃一: "アモルファス物質の光不安定性"応用物理. 68・10. 1122-1127 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Nonomura: "Photoinduced Expansion in Hydrogenated Amorphous Silicon"Materials Research Society Symposium Proceedings. (in print). (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Shuichi.Nonomura: "The Light-induced Metastable Lattice Expansion in Hydrogenated Amorphous Silicon"Journal of Non-Crystalline Solids. (in print). (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Sakamoto: "A Study on the Correlation between the Photoinduced Volume Expansion and the Internal Stress in Hydrogenated Amorphous Silicon"Journal of Non-Crystalline Solids. (in print). (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Itoh: "Characterization and Effects of Hydrogen in nc-Si:H"Journal of Non-Crystalline Solids. (in print). (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Itoh: "Role of Hydrogen in Hydrogenated Microcrystalline Silicon"Solar Energy Materials & Solar Cels. (in print). (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Harada: "The Creation of Hydrogen Radicals by the Hot-Wire Technique and It's Application for μc-Si:H"Solar Energy Materials & Solar Cels. (in print). (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Kitao: "Absorption Coefficient Spectra of μc-Si in the Low Energy Region 0.4〜1.2 eV"Solar Energy Materials & Solar Cels. (in print). (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Koichi Shimakawa: "Light-induced Instabilities in Amorphous Materials - Volume Changes and defect Creations -"Oyo Butsuri (Japanese Edition). Vol. 68 No. 12. 1122-1127 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Nonomura: "Photoinduced Expansion in Hydrogenated Amorphous Silicon"Materials Research Society Symposium Proceedings. (in print.). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Shuichi Nonomura: "The Light-induced Metastable Lattice Expansion in Hydrogenated Amorphous Silicon"Journal of Non-Crystalline Solids. (in print). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Sakamoto: "A Study on the Correlation between the Photoinduced Volume Expansion and the Internal Stress in Hydronegated Amorphous Silicon"Journal of Non-Crystalline Solids. (in print). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Itoh: "Characterization and Effects of Hydrogen in nc-Si:H"Journal of Non-Crystalline Solids. (in print). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Itoh: "Role of Hydrogen in Hydrogenated Microcrystalline Silicon""Solar Energy Materials & Solar Cells. (in print). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Harada: "The Creation of Hydrogen Rdicals by the Hot-Wire Technique and It's Appication for μc-Si:H"Solar Energy Materials & Solar Cells. (in print). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J. Kitao: "Absorption Coefficient Spectra of mc-Si in the Low Energy Region 0.4〜1.2 eV"Solar Energy Materials & Solar Cells. (in print). (2000)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2001-10-23  

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