2001 Fiscal Year Final Research Report Summary

Ultra High Sensitive Electron Bombarded Imager

Research Project

Project/Area Number	10650341
Research Category	Grant-in-Aid for Scientific Research (C)
Allocation Type	Single-year Grants
Section	一般
Research Field	電子デバイス・機器工学
Research Institution	Kokushikan University
Principal Investigator	TAKETOSHI Kazuhisa Kokushikan University, Electrical Professor, 電気電子工学科, 教授 (80255637)
Project Period (FY)	1998 – 2001
Keywords	ZnCdTe / EB-gain / Excess noise factor / EB利得
Research Abstract	We studied characteristics of electron bombaraded(EB)gain, excess noise factor, resolution, optimum thickness for EB-AMI. ZnCdTe sensor layer is overlaid on AMI. EB-gain is 1500 at 10 kV. Resolution is excellent since there is no connecting fiber. Random noise, white spots, lag and sticking cannot be detectable. Fatigue of running of 5000hr is excellent, is under detection although that of a-Si sensor is strong. The threshold voltage of 2kV is explained as penetration loss of Al, Six_2Nix_2 Optimal sensor thickness is 0.83 μm. Lateral expansion of electron excited in sensor is 0.2μm. theoretical excess noise factor is 1.2 and agrees with observed values.

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