1999 Fiscal Year Final Research Report Summary
Study of Electron Emission Properties of CVD Diamond Thin Film in Low Electric Field
| Project/Area Number |
10650668
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Inorganic materials/Physical properties
|
|---|
| Research Institution | KYUSHU UNIVERSITY |
|---|
Principal Investigator |
UEHARA Masato Graduate School of Engineering, Kyushu University Research Associate, 工学研究科, 助手 (10304742)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
上原 雅人 九州大学, 工学研究科, 助手 (10304742)
|
|---|
| Project Period (FY) |
1998 – 1999
|
| Keywords | diamond / thin film / microwave CVD / semiconductor / field emission |
|---|
| Research Abstract |
Diamond thin films were formed on n-type(100)Si wafer by microwave plasma CVD method and measured their field emission property. The nuclei were deposited by carburization in CィイD22ィエD2HィイD22ィエD2-HィイD22ィエD2 system and bias treatment, or seeding by diamond powder. The deposited diamond particles were grown in(CHィイD23ィエD2)ィイD22ィエD2CO-HィイD22ィエD2 system.(CィイD22ィエD2HィイD25ィエD2)ィイD22ィエD2NH gas was used as source of N dopant. The reaction temperature was 600-900℃(on the substrate).
1. Morphology and Structure of Diamond Thin Films
The thin film which was nucleated by bias treatment and grown at 800℃ was oriented(100) polycrystalline film. The facet was clearly observed in films doped 0-500ppm of(CィイD22ィエD2HィイD25ィエD2)ィイD22ィエD2NH. In the film doped 1000-5000ppm, facet was not observed clear. By Raman spectra analysis, the peaks of diamond and graphite was observed clearly in the films doped 0-2000ppm. On the other hand, in the 5000ppm doped film, no peak of diamond was observed. The films which were nucleated by seeding was non-oriented.
2. Field Emission Property
The field emission property was carried out in the range of 0-25V/m. The distance of film and anode was 20mm. In the case of the films nucleated by bias treatment, and grown at 800℃ , doped 300-2000ppm, the electron emission was confirmed. In particular, in the 500ppm doped film, the electron was emitted at 4.1V/m and the large electric current was observed, whereas the morphology and structure was same as non-doped film in which no emission was observed. In the 5000ppm doped film whose morphology and structure was non-facet, the emission was not observed. In the case of films nucleated by seeding, the emission was observed at 20V/m in the only 1000ppm doped film grown at 700℃.
Thus, this investigation suggested that(CィイD22ィエD2HィイD25ィエD2)ィイD22ィエD2NH dope was useful to the improvement of field emission property of diamond film, and the morphology(orientation…)and structure also related filed emission property.
|
