| Co-Investigator(Kenkyū-buntansha) |
KAMIURA Yoichi Okayama University, Faculty of Engineering, Professor, 工学部, 教授 (30033244)
KANASAKI Jun-ichi Osaka City University, Faculty of Engineering, Associate Professor, 大学院・工学研究科, 助教授 (80204535)
NAGAOKA Shin-ichi Ehime University, Faculty of Science, Associate Professor, 理学部, 助教授 (30164403)
SHINOZUKA Yuzo Wakayama University, Faculty of Systems Engineering, Professor, システム工学部, 教授 (30144918)
KAYANUMA Yohsuke Osaka Prefecture University, Faculty of Engineering, Professor, 大学院・工学研究科, 教授 (80124569)
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| Research Abstract |
This priority area project carried out in 1998- 2001 FY aimed to elucidate, with cooperation of 8 research groups sharing common material systems and thoughts, the whole picture of the mechanisms of electronic excitation induced atomic movements in semiconductors thereby developing novel techniques for manipulating atoms and molecules with high controllability (selectivity) and efficiency in solid materials that are expected to be useful for realization of next generation devices. The materials actually studied have included typical semiconductors such as Si, C and GaAs, and the electronic excitation methods have been based on photon illumination (laser and X-ray), particle beams (electron and ion), current injection, and charge state control. The activities this year, devoted to summarizing the 3 years project, have included two committee meetings of group leaders, an open workshop, and publication of a News Letter. Through these activities, we have proposed a general guide line for enhancing the efficiency and : the selectivity of atomic and molecular manipulation by electronic excitations : The material systems efficiently controllable should be defect centers in semiconductors possessing inherent structural instability due to orbitally-degenerate excited states, light elements such as hydrogens with high mobility in the excited states, defects or surfaces with structural flexibility, and carbon solids with flexible orbital hybridization. The use of long lifetime two-hole states generated by high density excitations, cooperative excitations and parallel processes will also promote the efficiency of the primary excitations. Further, to attain the site-selectivity expected in localized excitations, it is necessary to suppress the spatial spread of the excited electrons (holes) in the extended band states.
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