1999 Fiscal Year Annual Research Report

人工IV族半導体極微細構造を用いた超高速光・電子デバイスの開発

Research Project

Project/Area Number	11232201
Research Category	Grant-in-Aid for Scientific Research on Priority Areas (B)
Research Institution	Tohoku University
Principal Investigator	室田淳一東北大学, 電気通信研究所, 教授 (70182144)
Co-Investigator(Kenkyū-buntansha)	栗野浩之東北大学, 大学院・工学研究科, 講師 (70282093) 松浦孝東北大学, 電気通信研究所, 助教授 (60181690) 小柳光正東北大学, 大学院・工学研究科, 教授 (60205531) 小野昭一アルプス電気株式会社, 最高技術顧問土屋敏章島根大学, 総合理工学部, 教授 (20304248)
Keywords	SiGe / SiGeC / MOS / HBT / CVD低温選択成長 / in-situ不純物ドーピング / 不純物拡散 / 高選択異方性エッチング
Research Abstract	本研究では、大容量知的情報の超高速伝送・処理を可能にすることを目指して、人工IV族半導体超高速光・電子デバイスを開発することを目的とし、Si-Ge(-C)系のIV族半導体極微細構造をデバイスに搭載した、極微細MOSFET、ヘテロバイポーラトランジスタ(HBT)、Si/SiGe/Si-SOI構造の新デバイス等による低電圧・低消費電力・超高速・新機能付集積回路を設計し、それを表面・界面構造劣化の生じない低温高清浄プロセスを駆使して製作する技術を構築し、デバイス試作とその評価・デバイス物理の検討をとおして極微細化・超高速化の最適方法を明らかにしようとしている。本年度は計画の初年度として、微細MOSFET製作プロセスのさらなる極微細化・高精度化を進めるとともに、高品質SiGeエピタキシャル層を活性層へ導入したMOSFETおよびHBTを研究した。具体的には、高清浄CVDによる高品質Si-Ge(-C)系薄膜の低温選択エピタキシャル成長、高精度in-situ不純物ドーピング、Siの原子精度窒化、高選択異方性エッチング、原子層吸着拡散法による浅い接合の形成を実現し、また、電極用Wの低温選択成長初期過程を明らかにした。さらに、寄生バイポーラ効果を大きくして大きな電流駆動能力を得ることを目的としたDT-SOIMOSFETの提案・試作を行い、Siに比べてSiGeでは300倍以上増加することを明らかにした。一方、歪SiGe層を埋め込みチャネルに用いたバルクSi pMOSFETを試作し,通常構造の2倍以上のgmが得られることを確認したが,SiGe層厚を増大して歪緩和させていくとドレインリーク電流が増大し,その原因がゲート酸化膜界面準位の発生に起因していることを明らかにした。さらに、Si/SiGe系p型MODFETの二次元正孔ガスの挙動、散乱機構に関して議論した。

Research Products

(15 results)

All Other

All Publications (15 results)

[Publications] S.Kobayashi et al.: "Segregation and Diffusion of Phosphorus from Doped Si_<1-x>Ge_x Films into Silicon"J.Appl.Phys.. 86,10. 5480-5483 (1999)
[Publications] T.Seino et al.: "Contribution of Radicals and lons in Atomic-Order Plasma Nitridation of Si"Appl.Phys.Lett.. 76,3. 342-344 (2000)
[Publications] P.Han et al.: "Observation of Sharp Current Peaks in Resonant Tunneling Diode with Strained Si_<0.6>Ge_<0.4>/Si(100)Grown by Low-Temperature Low-Pressure CVD"J.Crystal Growth. 209,2-3. 315-320 (2000)
[Publications] A.Ichikawa et al.: "Epitaxial Growth of Si_<1-x-y>Ge_xC_y Film on Si(100) in a SiH_4-GeH_4-CH_3SiH_3 Reaction"Thin Solid Films. (accepted).
[Publications] S.Kobayashi et al.: "Diffusion and Segregation of Impurities from Doped Si_<1-x>Ge_x Films Silicon"Thin Solid Films. (accepted).
[Publications] T.Tsuchiya et al.: "Drain Leakage Current and Instability of Drain Current in Si/Si_<1-x>Ge_x MOSFETs"Thin Solid Films. (accepted).
[Publications] J.Murota et al.: "SiGe Processing and its Application in MOS Devices"Abs.of the 1st Microelectronics Workshop. 30-31 (1999)
[Publications] J.Murota et al.: "Atomically Controlled Processing for Si-Based Ultrasmall Devices"Ext.Abs.of 18th Symposium on Future Electron Devices. 65-70 (1999)
[Publications] T.Kikuchi et al.: "Super Self-Aligned Processing for Sub 0.1μm MOS Devices Using Selective Si_<1-x>Ge_x CVD"Proc.of the First International Symposium on ULSI Process Integration. PV99-18. 147-153 (1999)
[Publications] T.Matsuura et al.: "Atomic-Order Side-Wall Passivation with Nitrogen in ECR Plasma Etching of Si"Proc.of the Plasma Etching Processes for Sub-Quarter Micron Devices. PV99-30(in press). (2000)
[Publications] T.Kanetsuna et al.: "Surface Adsorption and Reaction of Chlorine on Impurity Doped Si Using an ECR Plasma"Abs.of 197th Meeting of the Electrochemical Society. (accepted). (2000)
[Publications] Y.Yamamoto et al.: "Surface Adsorption of WF_6 on Si and SiO_2 in Selective W-CVD"Abs.of 197th Meeting of the Electrochemical Society. (accepted). (2000)
[Publications] T.Noda et al.: "Doping and Electrical Characteristics of In Situ Heavily B-Doped Si_<1-x-y>Ge_xC_y Films Epitaxially Growth Using Ultraclean LPCVD"Abs.of 2000 Spring Meeting,The European Materials Research Society. (accepted). (2000)
[Publications] Y.H.Song et al.: "A Novel Atomic Layer Doping Technology for Ultra-shallow Junction in Sub-0.1μm MOSFETs"Abs.of Technical Digest of Internal Electron Devices Meeting 1999. 505-508 (1999)
[Publications] Y.H.Song et al.: "Ultrashallow Junction Formation by Rapid Thermal Annealing of Arsenic-Adsorbed Layer"Jpn.J.Appl.Phys.. 39,Part1,No.1. 26-30 (2000)

1999 Fiscal Year Annual Research Report

人工IV族半導体極微細構造を用いた超高速光・電子デバイスの開発

Principal Investigator

室田 淳一 東北大学, 電気通信研究所, 教授 (70182144)

Research Products

[Publications] S.Kobayashi et al.: "Segregation and Diffusion of Phosphorus from Doped Si_<1-x>Ge_x Films into Silicon"J.Appl.Phys.. 86,10. 5480-5483 (1999)

[Publications] T.Seino et al.: "Contribution of Radicals and lons in Atomic-Order Plasma Nitridation of Si"Appl.Phys.Lett.. 76,3. 342-344 (2000)

[Publications] P.Han et al.: "Observation of Sharp Current Peaks in Resonant Tunneling Diode with Strained Si_<0.6>Ge_<0.4>/Si(100)Grown by Low-Temperature Low-Pressure CVD"J.Crystal Growth. 209,2-3. 315-320 (2000)

[Publications] A.Ichikawa et al.: "Epitaxial Growth of Si_<1-x-y>Ge_xC_y Film on Si(100) in a SiH_4-GeH_4-CH_3SiH_3 Reaction"Thin Solid Films. (accepted).

[Publications] S.Kobayashi et al.: "Diffusion and Segregation of Impurities from Doped Si_<1-x>Ge_x Films Silicon"Thin Solid Films. (accepted).

[Publications] T.Tsuchiya et al.: "Drain Leakage Current and Instability of Drain Current in Si/Si_<1-x>Ge_x MOSFETs"Thin Solid Films. (accepted).

[Publications] J.Murota et al.: "SiGe Processing and its Application in MOS Devices"Abs.of the 1st Microelectronics Workshop. 30-31 (1999)

[Publications] J.Murota et al.: "Atomically Controlled Processing for Si-Based Ultrasmall Devices"Ext.Abs.of 18th Symposium on Future Electron Devices. 65-70 (1999)

[Publications] T.Kikuchi et al.: "Super Self-Aligned Processing for Sub 0.1μm MOS Devices Using Selective Si_<1-x>Ge_x CVD"Proc.of the First International Symposium on ULSI Process Integration. PV99-18. 147-153 (1999)

[Publications] T.Matsuura et al.: "Atomic-Order Side-Wall Passivation with Nitrogen in ECR Plasma Etching of Si"Proc.of the Plasma Etching Processes for Sub-Quarter Micron Devices. PV99-30(in press). (2000)

[Publications] T.Kanetsuna et al.: "Surface Adsorption and Reaction of Chlorine on Impurity Doped Si Using an ECR Plasma"Abs.of 197th Meeting of the Electrochemical Society. (accepted). (2000)

[Publications] Y.Yamamoto et al.: "Surface Adsorption of WF_6 on Si and SiO_2 in Selective W-CVD"Abs.of 197th Meeting of the Electrochemical Society. (accepted). (2000)

[Publications] T.Noda et al.: "Doping and Electrical Characteristics of In Situ Heavily B-Doped Si_<1-x-y>Ge_xC_y Films Epitaxially Growth Using Ultraclean LPCVD"Abs.of 2000 Spring Meeting,The European Materials Research Society. (accepted). (2000)

[Publications] Y.H.Song et al.: "A Novel Atomic Layer Doping Technology for Ultra-shallow Junction in Sub-0.1μm MOSFETs"Abs.of Technical Digest of Internal Electron Devices Meeting 1999. 505-508 (1999)

[Publications] Y.H.Song et al.: "Ultrashallow Junction Formation by Rapid Thermal Annealing of Arsenic-Adsorbed Layer"Jpn.J.Appl.Phys.. 39,Part1,No.1. 26-30 (2000)

室田淳一東北大学, 電気通信研究所, 教授 (70182144)