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[Publications] T.Seino et al: "Contribution of Radicals and Ions in Atomic-Order Plasma Nitridation of Si"Appl.Phys.Lett.. Vol.76,No.3. 342-344 (2000)
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[Publications] P.Han et al: "Observation of Sharp Current Peaks in Resonant Tunneling Diode with Strained Si_<0.6>Ge_<0.4>/Si(100) Grown by Low-Temperature Low-Pressure CVD"J.Crystal Growth. Vol.209,No.2-3. 315-320 (2000)
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[Publications] T.Takatsuka et al: "Surface Reaction of CH_3SiH_3 on Ge(100) and Si(100)"Appl.Surf.Sci.. Vol.162-163. 156-160 (2000)
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[Publications] Y.Shimamune et al: "Atomic-Layer Adsorption of P on Si(100) and Ge(100) by PH_3 Using an Ultraclean Low-Pressure Chemical Vapor Deposition"Appl.Surf.Sci.. Vol.162-163. 390-394 (2000)
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[Publications] A.Ichikawa et al: "Epitaxial Growth of Si_<1-x-y>Ge_xC_y Film on Si(100) in a SiH_4-GeH_4-CH_3SiH_3 Reaction"Train Solid Films. Vol.369,No.1-2. 167-170 (2000)
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[Publications] S.Kobayashi et al: "Segregation and Diffusion of Impurities from Doped Si_<1-x>Ge_x Films into Silicon"Thin Solid Films. Vol.369,No.1-2. 222-225 (2000)
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[Publications] T.Tsuchiya et al: "Drain Leakage Current and Instability of Drain Current in Si/Si_<1-x>Ge_x MOSFETs"Thin Solid Films. Vol.369,No.1-2. 379-382 (2000)
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[Publications] H.Takeuchi et al: "Contribution of Ions and Radicals in Etching of Si_<1-x>Ge_x Epitaxial Films Using an Electron-Cyclotron-Resonance Chlorine Plasma"Appl.Phys.Lett.. Vol.77,No.12. 1828-1830 (2000)
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[Publications] T.Noda et al: "Doping and Electrical Characteristics of in-situ Heavily B-Doped Si_<1-x-y>Ge_xC_y Films Epitaxially Grown Using Ultraclean LPCVD"Thin Solid Films. Vol.380. 57-60 (2000)
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[Publications] Y.Shimamune et al: "Atomic-Layer Doping in Si by Alternately Supplied PH_3 and SiH_4"Thin Solid Films. Vol.380. 134-136 (2000)
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[Publications] 室田淳一 他: "CVDSi_<1-x>Ge_xエピタキシャル成長とドーピング制御"日本結晶成長学会誌. Vol.27,No.4. 171-178 (2000)
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[Publications] Y.Nakabayashi et al: "Epitaxial Growth of Pure ^<30>Si Layers on a Natural Si(100) Substrate Using Enriched ^<30>SiH_4"Jpn.J.Appl.Phys.. Vol.39. L1133-L1134 (2000)
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[Publications] P.Han et al: "The Effect of Si/Si_<1-y>C_y/Si Barriers on the Characteristics of Si_<1-x>Ge_x/Si Resonant Tunneling Structure"Chin.Phys.Lett.. Vol.17. 844 (2000)
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[Publications] T.Watanabe et al: "Atomic-Order Thermal Nitridation of Si (100) and Subsequent Growth of Si"J.Vac.Sci.Technol.A. Vol.19,No.4(in press). (2000)
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[Publications] D.Lee et al: "Phosphorus Doping in Si_<1-x-y>Ge_xC_y Epitaxial Growth by Low-Pressure Chemical Vapor Deposition Using a SiH_4-GeH_4-CH_3SiH_3-PH_3-H_2 Gas System"Jpn.J.Appl.Phys.. Vol.40,No.4B(in press). (2001)
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[Publications] T.Kanetsuna et al: "Surface Adsorption and Reaction of Chlorine on Impurity Doped Si Using an ECR Plasma"Abs.of 197th Meeting of the Electrochemical Society. 294 (2000)
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[Publications] Y.Yamamoto et al: "Surface Adsorption of WF_6 on Si and SiO_2 in Selective W-CVD"Abs.of 197th Meeting of the Electrochemical Society. 928 (2000)
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[Publications] D.Lee et al: "In-Situ Impurity Doping in Si_<1-x-y>Ge_xC_y Epitaxial Growth Using Ultraclean LPCVD"Abs.of 2000 International Conf.on Solid State Devices and Materials. 206-207 (2000)
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[Publications] T.Matsuura et al: "A Novel Lithographic Method for Fabricating Three Dimensional Periodic Stacks"Abs.of 2000 International Conf.on Solid State Devices and Materials. 542-543 (2000)
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[Publications] M.Fujiu et al: "Thermal Stability of Si and C Atomic Layers Formed on Ge(100) in Silane and Methylsilane Reactions"Abs.of American Vacuum Society 47th Internatonal Symposium : Vacuum Thin Films, Surafces/Interfaces, Processing & NANO-6. TF-MoM4 (2000)
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[Publications] O.Jintsugawa et al: "Thermal Nitridation of Ultrathin Silicon Dioxide Films Using NH_3 Gas"Abs.of American Vacuum Society 47th Internatonal Symposium : Vacuum Thin Films, Surafces/Interfaces, Processing & NANO-6. SC1+EL+SS-Mo4 (2000)
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[Publications] T.Seino et al: "Thermal Effects in Atomic-Order Nitridation of Si by a Nitrigen Plasma"Abs.of American Vacuum Society 47th Internatonal Symposium : Vacuum Thin Films, Surafces/Interfaces, Processing & NANO-6. PS-WeP17 (2000)
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[Publications] K.Matsuda et al: "A New Process for Fabricating Three-Dimensional Periodic Structures Made of Photo-Resists"Abs.of Materials Research Society 2000 Fall Meeting. E1.6 (2000)
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[Publications] Y.Shimamune et al: "Heavily P-doped Si Films Epitaxially Grown at 450℃ by Alternately Supplied PH_3 and SiH_4"Abs.of 2000 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures. 76 (2000)
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[Publications] J.Murota et al: "Atomically Controlled Processing for Fabrication of Si-based Ultimate-Small Devices"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 131-134 (2000)
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[Publications] T.Seino et al: "Influence of Surface Heating due to Plasma Exposure on Atomic-Order Plasma Nitridation of Si"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 223-226 (2000)
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[Publications] O.Jintsugawa et al: "Thermal Nitridation of Ultrathin Silicon Dioxide Films Using NH_3 Gas"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 227-230 (2000)
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[Publications] T.Watanabe et al: "Nitrogen-Doped Si Epitaxial Growth by Alternately Supplied NH_3 and SiH_4"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 258-261 (2000)
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[Publications] M.Fujiu et al: "Surface Reaction of Silane and Methylsilane on Ge(100)"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 262-265 (2000)
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[Publications] Y.Shimamune et al: "Very Low-Resistive Si Epitaxial Growth at 450℃ by Alternately Supplied PH_3 and SiH_4"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 266-269 (2000)
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[Publications] D.Lee et al: "Epitaxial Growth and Electrical Characteristics of Impurity-Doped Si_<1-x-y>Ge_xC_y on Si(100) by Ultraclean LPCVD"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 270-273 (2000)
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[Publications] Y.Yamamoto et al: "Surface Adsorption and Reaction on Si and SiO_2 at Very Low Temperature in a WF_6-SiH_4 Gas System"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 294-297 (2000)
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[Publications] T.Tsuchiya et al: "Low-Frequency-Noise and Its Correlation with Transconductance in Si_<1-x>Ge_x Channel pMOSFET"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. II-01 (2001)
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[Publications] T.Yamashiro et al: "Fabrication of 0.1um MOSFETs with Super Self-Aligned Ultrashallow Junction Formed by Selective In-Situ Doped Si_<1-x>Ge_x CVD"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. II-07 (2001)
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[Publications] A.Fukuchi et al: "Etching Feature Improvement by Side-Wall Protection with B in P-Doped Polysilicon"Abs.of First Int.Workshop on New Group IV(St-Ge-C) Semiconductors. II-11 (2001)
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[Publications] Y.Shimamune et al: "Heavy Doping Characteristics in Si Epitaxial Growth at 45O℃ by Alternate Supplies of PH_3 and SiH_4"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. II-12 (2001)
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[Publications] Y.Kunii et al: "Development of Ultraclean LPCVD Equipment for SiGe(C) Epitaxial Growth"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. IV-05 (2001)
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[Publications] T.Noda et al: "B- and P-Doped SiGe(C) Epitaxial Growth on Si(100) by Ultraclean LPCVD"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. IV-08 (2001)
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[Publications] A.Tobioka et al: "Study on Solid-Phase Reactions in Ti/p^+-Si_<1-x-y>Ge_xC_y/Si(100) Contacts"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. IV-03 (2001)
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[Publications] T.Seino et al: "Atomic-Order Plasma Nitridation of Si under the Si Surface Cooling"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. VI-18 (2001)
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[Publications] M.Fujiu et al: "Self-Limiting Surface Reactiomt of SiH_4 and CH_3SiH_3 on Ge(100)"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. VI-19 (2001)
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[Publications] O.Jintsugawa et al: "Thermal Nitridation of Ultrathin Silicon Dioxide Films at 750-850℃ in an NH_3 Environment"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. VI-20 (2001)
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[Publications] S.Ishida et al: "Buffered HF Etching Characteristics of Si_<1-x-y>Ge_xC_y Epitaxial Films"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. VI-21 (2001)
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[Publications] Y.Nakabayashi et al: "Epitaxial Growth of Pure ^<30>Si Layers on a Natural Si(100) Substrate Using Enriched ^<30>SiH_4"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. VI-25 (2001)
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[Publications] T.Sadoh et al: "Improvement of Thermal Stability in In-Situ Doped Poly-SiGe Gate on SiON"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. II-10 (2001)
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[Publications] K.W.Koh et al: "Ultrashallow Junction with Elevated SiGe Source/ Drain Fabricated by Laser Induced Atomic Layer Doping"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. II-09 (2001)
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[Publications] T.Seino et al: "Side-Wall Protection by B in P-doped Polysilicon in Gate Etching"Proceedings of the Second International Symposium on ULSI Process, 199th Meeting of the Electrochemical Society. (in press). (2001)
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[Publications] T.Tsuchiya et al: "Low Frequency Noise in Si_<1-x>Ge_x-Channel pMOSFETs"Proceedings or the Second International Symposium on ULSI Process, 199th Meeting of the Electrochemical Society. (in press). (2001)
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[Publications] Y.Shimamune et al: "Epitaxial growth of heavily P-doped Si films at 450℃ by alternately supplied PH_3 and SiH_4"Abs.of the 13th European Conference on Chemical Vapor Deposition. (accepted). (2001)
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[Publications] J.Murota: "Atomically Controlled Processing for Group IV Semiconductors"Abs.of the 9th European Conference on Applications of Surface and Interface Analysis. (invited). (2001)
