2002 Fiscal Year Annual Research Report

人工IV族半導体極微細構造を用いた超高速光・電子デバイスの開発

Research Project

Project/Area Number	11232201
Research Institution	Tohoku University
Principal Investigator	室田淳一東北大学, 電気通信研究所, 教授 (70182144)
Co-Investigator(Kenkyū-buntansha)	土屋敏章島根大学, 総合理工学部, 教授 (20304248) 栗野浩之東北大学, 大学院・工学研究科, 助教授 (70282093) 小柳光正東北大学, 大学院・工学研究科, 教授 (60205531) 杉山直治 (株)東芝, 基礎研究所, 研究主務小野昭一アルプス電気(株), 最高技術顧問(常勤研究職)
Keywords	SiGe / SiGeC / MOS / HBT / CVD / 選択成長 / 不純物ドーピング / 高精度エッチング
Research Abstract	本研究では、人工IV族半導体超高速光・電子デバイスを開発することを目指し、Si-Ge(-C)系のIV族半導体極微細構造をデバイスに搭載した極微細MOSFET、ヘテロバイポーラトランジスタ(HBT)、Si/SiGe/Si-SOI構造の新デバイス等による低電圧・低消費電力・超高速・新機能付集積回路を設計し、それを表面・界面構造劣化の生じない低温高清浄プロセスを駆使して製作する技術を構築し、デバイス試作とその評価・デバイス物理の検討を通して極微細化・超高速化の最適方法を明らかにしようとしている。本年度は5年計画の第4年目として、原子精度制御プロセスの微細MOSFET製作への応用基盤技術を進展させるとともに、高品質Si-Ge(-C)系エピタキシャル薄膜をデバイスに導入したMOSFETおよびHBTの高性能化について研究した。具体的には、Niシリサイドを用いた超低抵抗金属/半導体接触を実現するとともに、高清浄CVDによる不純物ドープ非選択成長SiGeC薄膜を用いたセルフアライン構造によるHBTの高性能化を実現した。また、SiGe選択エッチングによるマルチチャネルMOS構造形成法を開発するとともに、酸化濃縮により形成した高品質SiGe-On-Insulator (SGOI)基板上に成長させた歪Siをチャネルに適用してMOSデバイスを高電流駆動力化した。さらに、チャージポンピング法によりSiGeヘテロチャネルpMOSFETの界面捕獲準位密度の評価を可能にするとともに、不純物ドープSiGe選択成長により極浅ソース/ドレインを自己整合形成したゲート長0.1μm SiGeヘテロチャネルMOSFETを試作し、MOSデバイスの高電流駆動力化と同時にサブスレッショルド特性劣化の抑制が可能なことを実証した。このようにデバイス主要部分へのSi-Ge(-C)系IV族半導体薄膜適用の有効性が明らかになった。

Research Products

(22 results)

All Other

All Publications (22 results)

[Publications] J.Murota et al.: "Atomically controlled processing for group IV semiconductors"Surf Interface Anal.. Vol.34. 423-431 (2002)
[Publications] O.Jintsugawa et al.: "Thermal nitridation of ultrathin SiO_2 on Si by NH_3"Surf. Interface Anal.. Vol.34. 456-459 (2002)
[Publications] 栗野浩之他: "ウェーハレベル3次元集積化技術"表面技術. 第53巻第4号. 228-232 (2002)
[Publications] Y.C.Jeong et al.: "Atomic-Layer Doping of N in Si Epitaxial Growth on Si(100) and its Thermal Stability"Proceedings of the 19th International Symposium on Silicon Material Science and Technology, 201th Meeting of the Electrochemical Society. 287-296 (2002)
[Publications] M.Mori et al.: "Si Epitaxial Growth on Atomic-Order Nitrided Si(100) Using an ECR Plasma"201st Meeting of The Electrochemical Society. Abs.No.402 (2002)
[Publications] T.Yamazaki et al.: "Double-Polysilicon Self-Aligned HBT with Non-Selective Epitaxial SiGe : C Base Layer"2nd Int. Workshop on New Group IV (Si-Ge-C) Semiconductors : Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices. (2002)
[Publications] J.Murota et al.: "Atomically Controlled Heterostructure Growth of Group IV Semiconductors"3rd "Trends in NanoTechnology" International Conference (TNT2002). 377 (2002)
[Publications] J.Murota et al.: "SiGe Epitaxial CVD Technology for Si-Based Ultrasmall Devices (Invited Paper)"Meeting Abstracts of International Semiconductor Technology Conference (ISTC 2002), The Electrochemical Society. Abs.No.53 (2002)
[Publications] D.Lee et al.: "0.1μm pMOSFETs with SiGe-Channel and B-Doped SiGe Source/Drain Layers"Extended Abstracts of the 2002 Int. Conf. on Solid State Devices and Materials (SSDM 2002). 764-765 (2002)
[Publications] JeoungChill Shim et al.: "Novel Nickel Silicide Formation Technique For Sub-50nm MOS Device Application"Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials (SSDM2002). 434-435 (2002)
[Publications] Y.Yamada et al.: "Silicon-On-Low-K Substrate (SOLK) Technology For High-Speed And Low-Power Devices"Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials (SSDM2002). 794-795 (2002)
[Publications] T.Tsuchiya et al.: "Evaluation of Interface-Trap Density in a SiGe/Si Heterostructure Using a Charge Pumping Technique and Correlation between the Trap Density and Low Frequency Noise in SiGe-Channel pMOSFETs"32nd European Solid-State Device Research Conference (ESSDERC 2002). 239-242 (2002)
[Publications] D.Lee et al.: "Fabrication of 0.12-μm SiGe-Channel MOSFET Containing High Ge Fraction with Ultrashallow Source/Drain Formed by Selective B-Doped SiGe CVD"First International SiGe Technology and Device Meeting (ISTDM 2003). 17-18 (2003)
[Publications] T.Sakai et al.: "A Proposal of Multi-Layer Channel MOSFET : The Application of Selective Etching for Si/SiGe Stacked Layers"First International SiGe Technology and Device Meeting (ISTDM 2003). 31-32 (2003)
[Publications] S.Takagi et al.: "Fabrication and Device Characteristics of Strained-Si-On-Insulator (Strained-SOI) CMOS"First International SiGe Technology and Device Meeting (ISTDM 2003). 269-270 (2003)
[Publications] H.Kanno et al.: "Ge dependent morphological change in poly-SiGe formed by Ni-mediated crystallization"First International SiGe Technology and Device Meeting (ISTDM 2003). 183-185 (2003)
[Publications] J.Noh et al.: "Relationship between Total Impurity (B or P) and Carrier Concentrations in SiGe Epitaxial Film Produced by the Thermal Treatment"First International SiGe Technology and Device Meeting (ISTDM 2003). 165-166 (2003)
[Publications] H.-S.Cho et al.: "Etching Characteristics of Impurity-Doped Si_<1-x>Ge_x Epitaxial Films Using Electron-Cyclotron-Resonance Chlorine Plasma"First International SiGe Technology and Device Meeting (ISTDM 2003). 181-182 (2003)
[Publications] Y.C.Jeong et al.: "Epitaxial Growth of N Delta Doped Si Films on Si(100) by Alternately Supplied NH_3 and SiH_4"First International SiGe Technology and Device Meeting (ISTDM 2003). 243-244 (2003)
[Publications] Y.Shimamune et al.: "Formation of Heavily P Doped Si Epitaxial Film on Si(100) by Multiple Atomic-Layer Doping Technique"First International SiGe Technology and Device Meeting (ISTDM 2003). 247-248 (2003)
[Publications] M.Fujiu et al.: "Carbon Effect on Thermal Stability of Si Atomic Layer on Ge(100)"First International SiGe Technology and Device Meeting (ISTDM 2003). 249-250 (2003)
[Publications] S.Takehiro et al.: "Characterization of High Ge Fraction SiGe-Channel MOSFET with Ultrashallow Source/Drain Formation by Selective B-Doped SiGe CVD"3rd Int. Conf. on SiGe(C) Epitaxy and Heterostructures (ICSI3). 179-181 (2003)

2002 Fiscal Year Annual Research Report

人工IV族半導体極微細構造を用いた超高速光・電子デバイスの開発

Principal Investigator

室田 淳一 東北大学, 電気通信研究所, 教授 (70182144)

Research Products

[Publications] J.Murota et al.: "Atomically controlled processing for group IV semiconductors"Surf Interface Anal.. Vol.34. 423-431 (2002)

[Publications] O.Jintsugawa et al.: "Thermal nitridation of ultrathin SiO_2 on Si by NH_3"Surf. Interface Anal.. Vol.34. 456-459 (2002)

[Publications] 栗野浩之 他: "ウェーハレベル3次元集積化技術"表面技術. 第53巻 第4号. 228-232 (2002)

[Publications] Y.C.Jeong et al.: "Atomic-Layer Doping of N in Si Epitaxial Growth on Si(100) and its Thermal Stability"Proceedings of the 19th International Symposium on Silicon Material Science and Technology, 201th Meeting of the Electrochemical Society. 287-296 (2002)

[Publications] M.Mori et al.: "Si Epitaxial Growth on Atomic-Order Nitrided Si(100) Using an ECR Plasma"201st Meeting of The Electrochemical Society. Abs.No.402 (2002)

[Publications] T.Yamazaki et al.: "Double-Polysilicon Self-Aligned HBT with Non-Selective Epitaxial SiGe : C Base Layer"2nd Int. Workshop on New Group IV (Si-Ge-C) Semiconductors : Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices. (2002)

[Publications] J.Murota et al.: "Atomically Controlled Heterostructure Growth of Group IV Semiconductors"3rd "Trends in NanoTechnology" International Conference (TNT2002). 377 (2002)

[Publications] J.Murota et al.: "SiGe Epitaxial CVD Technology for Si-Based Ultrasmall Devices (Invited Paper)"Meeting Abstracts of International Semiconductor Technology Conference (ISTC 2002), The Electrochemical Society. Abs.No.53 (2002)

[Publications] D.Lee et al.: "0.1μm pMOSFETs with SiGe-Channel and B-Doped SiGe Source/Drain Layers"Extended Abstracts of the 2002 Int. Conf. on Solid State Devices and Materials (SSDM 2002). 764-765 (2002)

[Publications] JeoungChill Shim et al.: "Novel Nickel Silicide Formation Technique For Sub-50nm MOS Device Application"Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials (SSDM2002). 434-435 (2002)

[Publications] Y.Yamada et al.: "Silicon-On-Low-K Substrate (SOLK) Technology For High-Speed And Low-Power Devices"Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials (SSDM2002). 794-795 (2002)

[Publications] D.Lee et al.: "Fabrication of 0.12-μm SiGe-Channel MOSFET Containing High Ge Fraction with Ultrashallow Source/Drain Formed by Selective B-Doped SiGe CVD"First International SiGe Technology and Device Meeting (ISTDM 2003). 17-18 (2003)

[Publications] T.Sakai et al.: "A Proposal of Multi-Layer Channel MOSFET : The Application of Selective Etching for Si/SiGe Stacked Layers"First International SiGe Technology and Device Meeting (ISTDM 2003). 31-32 (2003)

[Publications] S.Takagi et al.: "Fabrication and Device Characteristics of Strained-Si-On-Insulator (Strained-SOI) CMOS"First International SiGe Technology and Device Meeting (ISTDM 2003). 269-270 (2003)

[Publications] H.Kanno et al.: "Ge dependent morphological change in poly-SiGe formed by Ni-mediated crystallization"First International SiGe Technology and Device Meeting (ISTDM 2003). 183-185 (2003)

[Publications] J.Noh et al.: "Relationship between Total Impurity (B or P) and Carrier Concentrations in SiGe Epitaxial Film Produced by the Thermal Treatment"First International SiGe Technology and Device Meeting (ISTDM 2003). 165-166 (2003)

[Publications] H.-S.Cho et al.: "Etching Characteristics of Impurity-Doped Si_<1-x>Ge_x Epitaxial Films Using Electron-Cyclotron-Resonance Chlorine Plasma"First International SiGe Technology and Device Meeting (ISTDM 2003). 181-182 (2003)

[Publications] Y.C.Jeong et al.: "Epitaxial Growth of N Delta Doped Si Films on Si(100) by Alternately Supplied NH_3 and SiH_4"First International SiGe Technology and Device Meeting (ISTDM 2003). 243-244 (2003)

[Publications] Y.Shimamune et al.: "Formation of Heavily P Doped Si Epitaxial Film on Si(100) by Multiple Atomic-Layer Doping Technique"First International SiGe Technology and Device Meeting (ISTDM 2003). 247-248 (2003)

[Publications] M.Fujiu et al.: "Carbon Effect on Thermal Stability of Si Atomic Layer on Ge(100)"First International SiGe Technology and Device Meeting (ISTDM 2003). 249-250 (2003)

[Publications] S.Takehiro et al.: "Characterization of High Ge Fraction SiGe-Channel MOSFET with Ultrashallow Source/Drain Formation by Selective B-Doped SiGe CVD"3rd Int. Conf. on SiGe(C) Epitaxy and Heterostructures (ICSI3). 179-181 (2003)

室田淳一東北大学, 電気通信研究所, 教授 (70182144)

[Publications] 栗野浩之他: "ウェーハレベル3次元集積化技術"表面技術. 第53巻第4号. 228-232 (2002)