2001 Fiscal Year Final Research Report Summary
Band-engineering using III-V based ferromagnetic semiconductors and its application to magneto-optical devices
| Project/Area Number |
11305023
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Tokyo |
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Principal Investigator |
TANAKA Masaaki Graduate School of Engineering, The University of Tokyo, Associate Professor, 大学院・工学系研究科, 助教授 (30192636)
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| Co-Investigator(Kenkyū-buntansha) |
NARITSUKA Shigeya Meijo University, Faculty of Science and Engineering, Associate Professor, 理工学部, 助教授 (80282680)
NISHINAGA Tatau Meijo University, Faculty of Science and Engineering, Professor, 理工学部, 教授 (10023128)
NAKANO Yoshiaki Graduate School of Engineering, The University of Tokyo, Professor, 大学院・工学系研究科, 教授 (50183885)
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| Project Period (FY) |
1999 – 2001
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| Keywords | MnAs / GaAs / Faraday effect / magneto-optical effect / DBR (Distributed Bragg Reflector) / optical isolator / transverse magneto-optical Kerr effect / semiconductor-waveguide-type optical isolator |
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| Research Abstract |
We have shown that magneto-optical properties can be controllably enhanced in molecular beam epitaxy (MBE) grown semiconductor-based multilayer structures consisting of a magnetic layer and GaAs/AlAs distributed Bragg reflectors (DBR), that is a one-dimensional semiconductor-based magneto-photonic crystal. Here, the magnetic layer is GaAs containing MnAs nanoscale clusters (GaAs:MnAs), which can be formed by annealing (GaMn)As alloys at 500 - 750℃. Structural and magneto-optical properties of GaAs:MnAs are presented and its dielectric functions are derived. It is shown that DBR/GaAs:MnAs/DBR structures were successfully grown by MBE and their magneto-optical effect is enhanced due to the localization of light at the Bragg wavelength. Comparison with theoretical calculations of the magneto-optical properties and device potentials are also clarified.
Furthermore, using the GaAs:MnAs nanocluster system, semiconductor-based waveguide-type optical isolators are proposed and analyzed. Our theoretical calculations have shown that both TE-mode and TM-mode operations can be realized.
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