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2000 Fiscal Year Final Research Report Summary

Far-infrared〜THz light emitter based on InAs/GaSb quantam cascade structures

Research Project

Project/Area Number 11355012
Research Category

Grant-in-Aid for Scientific Research (A).

Allocation TypeSingle-year Grants
Section展開研究
Research Field Electronic materials/Electric materials
Research InstitutionTohoku University

Principal Investigator

OHNO Hideo  Tohoku University Research Institute of Electrical Communication Professor, 電気通信研究所, 教授 (00152215)

Co-Investigator(Kenkyū-buntansha) MIZUTA Masashi  NEC Corporation Opto-Electronics & High-Frequency device Research Laboratories Senior Researcher, 無線デバイス研究所, 主席技師(研究職)
OHNO Yuzo  Tohoku University Research Institute of Electrical Communication Research Associate, 電気通信研究所, 助手 (00282012)
MATSUKURA Fumihiro  Tohoku University Research Institute of Electrical Communication Research Associate, 電気通信研究所, 助手 (50261574)
Project Period (FY) 1999 – 2000
KeywordsInAs / GaSb / quantum cascade structure / quantum well structure / subband / laser / electroluminescence / far-infrared / THz
Research Abstract

Far-infrared〜THz intersubband light emitters based on InAs/GaSb quantum cascade structures were investigated theoretically and experimentally. In order to realize high efficiency light emitter, intersubband electroluminescence was characterized by step-scan Fourier transform infrared spectrometer(FT-IR) and low-temperature cryostat.
The summary of the research results are :
1. Calculated threshold current density of type-II InAs/GaSb intersubband emitter showed that it was about one-fifth as small as that of type-I GaAs/AlGaAs and GaInAs/AlInAs systems.
2. Intersubband electroluminescence from InAs/AlSb quantum cascade structures having large tunability of emission wavelength was observed for the first time.
3. Temperature and structure dependence of intersubband electroluminescence was instigated by step-scan FT-IR and low-temperature cryostat. Calculated subband structures were found to be in close agreement with extperimental results.
4. Optical properties of InAs/AlSb multi-quantum wells epitaxially grown on GaAs substrates with a buffer layer were shown to be dependent on the type of the interface bond and buffer layer material. X-ray diffraction measurements revealed that lattice matching between the average lattice constant of multi-quantum well and the buffer layer plays a key role in determining the optical properties.
5. Carrier recycling in type-II InAs/GaSb quantum cascade structures was investigated. It has been observed that the emission power was proportional to the periods of cascade structures, which indicated that injected carriers were recycled in type-II cascade structures.
6. The new type-II InAs/GaSb light emitting structures was proposed. Theoretical calculation showed that new structures could emit electro-magnetic waves in the THz region without going to an extreme design.

  • Research Products

    (10 results)

All Other

All Publications (10 results)

  • [Publications] K.Ohtani: "Intersubband electroluminescence in InAs/AlSb quantum cascade structures"Electronics Letters. Vol.35, No.11. 935-936 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 大谷啓太: "タイプIIInAs/GaSb/AlSbヘテロ構造量子井戸サブバンド間の電流注入発光"固体物理. Vol.34, No.8. 699-706 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Ohtani: "Mid-infrared intersubband electroluminescence in InAs/GaSb/AlSb type-II cascade structures"Physica E. Vol.7. 80-83 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Ohtani: "Influence of interface bonds and buffer materials on optical properties of InAs/AlSb quantum wells grown on GaAs substrates"Applied.Surface.Science. Vol.159-160. 313-317 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Ohtani: "Cascading effect in type-II InAs/GaSb/AlSb intersubband light emitters"Proceedings of the 25^<th> International Conference on the Physics of Semiconductor. (to be published). (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Ohtani and H.Ohno: "Intersubband electroluminescence in InAs/AlSb quantum cascade structures"Electronics Letters. Vol.35. 935-936 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Ohtani and H.Ohno: "Intersubband electroluminescence in type-II InAs/GaSb/Alsb quantum cascade structures"Solid State Physics. Vol.34. 699-706 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Ohtani and H.Ohno: "Mid-infrared intersubband electroluminescence in InAs/Gasb/AlSb Type-II cascade structures"Physica E. Vol.7. 80-83 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Ohtani, A.Sato, Y.Ohno, F.Matsukura, and H.Ohno: "Influence of interface bonds and buffer layer materials on optical properties of InAs/AlSb quantum wells grown on GaAs substrate"Applied Surface Science. Vol.159-160. 313-317 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Ohtani, H.Sakuma, and H.Ohno: "Cascading effect in type-II InAs/GaSb/AlSb intersubband light emitters"Proceedings of the 25^<th> International Conference on the Physics of Sermiconductor. (To be published). (2001)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2002-03-26  

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