2000 Fiscal Year Annual Research Report

ホットエレクトロン顕微鏡による固体電子波現象の直接観測技術の研究

Research Project

Project/Area Number	11355013
Research Institution	TOKYO INSTITUTE OF TECHNOLOGY
Principal Investigator	古屋一仁東京工業大学, 大学院・理工学研究科, 教授 (40092572)
Co-Investigator(Kenkyū-buntansha)	宮本恭幸東京工業大学, 大学院・理工学研究科, 助教授 (40209953)
Keywords	ホットエレクトロン検出 / 走査ホットエレクトロン顕微鏡 / トンネル電流ノイズ特性 / トンネル透過率空間分布 / ホットエレクトロンエミッタ / AlAs / GaInAsヘテロ構造 / バリスティック電子輸送 / エネルギ緩和特性
Research Abstract	走査探針を用いて半導体中で発生している電子波回折パターンを直接観測することを目指した。本研究以前に、絶縁物/金属からの十分高いエネルギのホットエレクトロンを探針で捕捉出来ていたので最終目標への前段階に位置する半導体中に発生させた十分高エネルギのホットエレクトロンを探針捕捉することを本研究の目標とした。材料・構造設計、成長条件把握を経てOMVPEにより作製して3V以上電圧印加できるAlAs/GaInAsヘテロ構造エミッタを完成させた。並行して、探針表面間を1nm以下に保持し、容量結合電流や振動ノイズを除去し、ホットエレクトロン捕捉する装置について、その電気的、機械的特性把握を詳細に行い最適条件を得て、表面に達するホットエレクトロンを確実に捕捉できるよう準備した。ホットエレクトロン検出実験を行った。得られた多数のデータについて、ホットエレクトロン対熱平衡の電流比を理論と詳細にフィッティングし、探針表面間距離、探針表面曲率半径、ホットエレクトロン転送効率、表面金属の実効仕事関数のパラメータ値の組み合わせを推定した。多数の信頼できる実験とデータから推定した結果はどうしても説明できない値の組み合わせとなり、半導体中に3eV以上の高エネルギ電子を100nm以上に渡って探針で捕捉できる程高効率に伝搬させることが困難であると結論した。この実験結果より、一足跳びに最終段階、すなわち半導体中を30meV程度の低エネルギで伝搬する電子波を探針で捕捉するか、あるいは本研究中に着想した新たな方法で進めるべきであると判断した。本研究は最終目標達成の方法を生み出す極めて重要な一歩となった

Research Products
(17 results)

All Other

All Publications (17 results)

[Publications] N.Machida and K.Furuya: "Numerical simulation of hot electron interference in a solid state biprism : Conditions for interference observation"Journal of Applied Physics. 88・5. 2885-2891 (2000)
[Publications] N.Machida and K.Furuya: "Coherent hot electron emitter"Japanese Journal of Applied Physics. 40・1. 64-68 (2001)
[Publications] B.A.M.Hansson et al.: "Simulation of interference patterns in solid-state biprism devices"Solid State Electronics. 44. 1275-1280 (2000)
[Publications] T.Arai et al.: "Toward nano-metal buried structure in InP-20nm wire and InP buried growth of tungsten"Physica E. 7・3-4. 896-901 (2000)
[Publications] T.Arai et al.: "First fabrication of GaInAs/InP buried metal heterojunction bipolar transistor and reduction of base-collector capacitance"Japanese Journal of Applied Physics. 39・6A. L503-L505 (2000)
[Publications] T.Arai et al.: "GaAs buried growth over tungsten stripes using TEG and TMG"Journal of Crystal Growth. 221・1-4. 212-219 (2000)
[Publications] Y.Miyamoto et al.: "Fabrication and transport properties of 50-nm-wide Au/Cr/GaInAs electrode for electron wave interference device"Applied Surface Science. 159-160. 179-185 (2000)
[Publications] M.Nagase et al.: "Peak width analysis of current-voltage characteristics of triple-barrier resonant tunneling diodes"Japanese Journal of Applied Physics. 39・6A. 3314-3318 (2000)
[Publications] N.Sakai et al.: "Theoretical relation between spatial resolution and efficiency of detection in scanning hot electron microscope"Japanese Journal of Applied Physics. 39・9A. 5256-5260 (2000)
[Publications] B.Y.Zhang et al.: "A vertical hot electron emitter of InGaAs/AlAs heterostructure with wide energy range at high current density"Physica E. 7. 851-854 (2000)
[Publications] N.Machida et al.: "Numerical simulation of hot electron interference in solid-state biprism"25^<th> International Conference on the Physics of Semiconductors. M261. (2000)
[Publications] T.Arai et al.: "CBC reduction in GaInAs/InP buried metal heterojunction bipolar transistor"12^<th> International Conference on Indium Phosphide and Related Materials. TuB1.6. (2000)
[Publications] T.Arai et al.: "GaAs buried growth over tungsten stripes using TEG and TMG"10^<th> International Conference on Metalorganic Vapor Phase Epitaxy. TuA-3. (2000)
[Publications] T.Arai et al.: "InP DHBT with 0.5 um wide emitter along <010> direction toward BM-HBT with narrow emitter"Topical Workshop on Heterostructure Microelectronics. Tue-3. (2000)
[Publications] Y.Miyamoto et al.: "Very shallow n-GaAs ohmic contact with 10 nm-thick GaInAs layer"19^<th> Electronic Materials Symposium. B2. (2000)
[Publications] M.Nagase et al.: "Phase breaking effect appearing in I-V characteristics of double-barrier resonant-tunneling diodes-Theoretical fitting over four orders of magnitude"2000 International Conference on Solid State Devices and Materials. D-6-5. (2000)
[Publications] B.Zhang and K.Furuya: "Characterization of hot electron transmission tunneling through the gap potential in scanning hot electron microscopy"10^<th> International Conference on Solid Films and Surface. Mo-P-167. (2000)

2000 Fiscal Year Annual Research Report

ホットエレクトロン顕微鏡による固体電子波現象の直接観測技術の研究

Principal Investigator

古屋 一仁 東京工業大学, 大学院・理工学研究科, 教授 (40092572)

Research Products

[Publications] N.Machida and K.Furuya: "Numerical simulation of hot electron interference in a solid state biprism : Conditions for interference observation"Journal of Applied Physics. 88・5. 2885-2891 (2000)

[Publications] N.Machida and K.Furuya: "Coherent hot electron emitter"Japanese Journal of Applied Physics. 40・1. 64-68 (2001)

[Publications] B.A.M.Hansson et al.: "Simulation of interference patterns in solid-state biprism devices"Solid State Electronics. 44. 1275-1280 (2000)

[Publications] T.Arai et al.: "Toward nano-metal buried structure in InP-20nm wire and InP buried growth of tungsten"Physica E. 7・3-4. 896-901 (2000)

[Publications] T.Arai et al.: "First fabrication of GaInAs/InP buried metal heterojunction bipolar transistor and reduction of base-collector capacitance"Japanese Journal of Applied Physics. 39・6A. L503-L505 (2000)

[Publications] T.Arai et al.: "GaAs buried growth over tungsten stripes using TEG and TMG"Journal of Crystal Growth. 221・1-4. 212-219 (2000)

[Publications] Y.Miyamoto et al.: "Fabrication and transport properties of 50-nm-wide Au/Cr/GaInAs electrode for electron wave interference device"Applied Surface Science. 159-160. 179-185 (2000)

[Publications] M.Nagase et al.: "Peak width analysis of current-voltage characteristics of triple-barrier resonant tunneling diodes"Japanese Journal of Applied Physics. 39・6A. 3314-3318 (2000)

[Publications] N.Sakai et al.: "Theoretical relation between spatial resolution and efficiency of detection in scanning hot electron microscope"Japanese Journal of Applied Physics. 39・9A. 5256-5260 (2000)

[Publications] B.Y.Zhang et al.: "A vertical hot electron emitter of InGaAs/AlAs heterostructure with wide energy range at high current density"Physica E. 7. 851-854 (2000)

[Publications] N.Machida et al.: "Numerical simulation of hot electron interference in solid-state biprism"25^<th> International Conference on the Physics of Semiconductors. M261. (2000)

[Publications] T.Arai et al.: "CBC reduction in GaInAs/InP buried metal heterojunction bipolar transistor"12^<th> International Conference on Indium Phosphide and Related Materials. TuB1.6. (2000)

[Publications] T.Arai et al.: "GaAs buried growth over tungsten stripes using TEG and TMG"10^<th> International Conference on Metalorganic Vapor Phase Epitaxy. TuA-3. (2000)

[Publications] T.Arai et al.: "InP DHBT with 0.5 um wide emitter along <010> direction toward BM-HBT with narrow emitter"Topical Workshop on Heterostructure Microelectronics. Tue-3. (2000)

[Publications] Y.Miyamoto et al.: "Very shallow n-GaAs ohmic contact with 10 nm-thick GaInAs layer"19^<th> Electronic Materials Symposium. B2. (2000)

[Publications] M.Nagase et al.: "Phase breaking effect appearing in I-V characteristics of double-barrier resonant-tunneling diodes-Theoretical fitting over four orders of magnitude"2000 International Conference on Solid State Devices and Materials. D-6-5. (2000)

[Publications] B.Zhang and K.Furuya: "Characterization of hot electron transmission tunneling through the gap potential in scanning hot electron microscopy"10^<th> International Conference on Solid Films and Surface. Mo-P-167. (2000)

古屋一仁東京工業大学, 大学院・理工学研究科, 教授 (40092572)