2001 Fiscal Year Final Research Report Summary
Fabrication of Buried Metal Structure and Reduction of Dislocation Density for Nitride Semiconductors by Selective Area Growth Technique
| Project/Area Number |
11450012
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Mie University |
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Principal Investigator |
HIRAMATSU Kazumasa Mie University Faculty of Engineering Professor, 工学部, 教授 (50165205)
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| Co-Investigator(Kenkyū-buntansha) |
MOTOGAITO Atsushi Mie University Faculty of Engineering Research Associate, 工学部, 助手 (00303751)
MIYAKE Hideto Mie University Faculty of Engineering Associate Professor, 工学部, 助教授 (70209881)
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| Project Period (FY) |
1999 – 2001
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| Keywords | GaN / AlN / selective area growth / tungsten / tungsten nitride / Schottky junction / metal mask buried structure / air-bridge structure |
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| Research Abstract |
A buried tungsten (W) structure with GaN is successfully obtained by epitaxial lateral overgrowth (ELO) technique via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The selectivity of GaN growth on the window regions is excellent. GaN with a striped W metal pattern is easily decomposed above low temperature of 500 ℃ by the catalytic effect of W. It is difficult to bury the W mask because severe damage occurs in the GaN epilayer under the mask. It is found that employing an AlGaN/GaN underlying heterostructure with narrow W stripe mask width (L/S = 2/2 μm) leads the epilayer to be free from damage, resulting in a good W-buried structure.
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