1999 Fiscal Year Annual Research Report

ナノスケールショットキー接合による金属-化合物半導体界面の物性制御と応用

Research Project

Project/Area Number	11450115
Research Category	Grant-in-Aid for Scientific Research (B)
Research Institution	Hokkaido University
Principal Investigator	長谷川英機北海道大学, 大学院・工学研究科, 教授 (60001781)
Co-Investigator(Kenkyū-buntansha)	葛西誠也北海道大学, 大学院・工学研究科, 助手 (30312383) 藤倉序章北海道大学, 大学院・工学研究科, 助教授 (70271640) 橋詰保北海道大学, 量子界面エレクトロニクス研究センター, 助教授 (80149898) 江潮北海道大学, 量子界面エレクトロニクス研究センター, 非常勤研究員講師
Keywords	電気化学プロセス / ナノスケールショットキー接合 / 金属ドット / フェルミ準位ピンニング / ショットキー障壁高制御 / 金属仕事関数依存性 / 単電子メモリ回路 / 単電子インバータ
Research Abstract	本研究は、「パルス駆動電気化学的その場プロセス」を用いて、化合物半導体材料上にナノスケールショットキー接合およびそのアレイを形成することにより、フェルミ準位ピンニングを除去し、金属-半導体界面の物性制御を行ない、かつ、それを電子デバイスに応用することを目的としている。本年度の成果を以下にまとめる。 (1)電気化学プロセスと電子ビーム露光法を組み合わせることにより、位置制御された直径50nm以下のPtドット-半導体接合を再現性良く、かつ、均一に形成可能となった。 (2)金属ドット-半導体接合において、金属ドットの粒径分布が均一でしかも粒径のより小さなドットほど、大きなショットキー障壁高を持つという相関を見い出した。以上の結果は、粒径が小さい場合ほど金属-半導体界面の歪が少なく、半導体表面のボンドの乱れが少ないため、界面におけるフェルミ準位のピンニングが緩和し、金属の仕事関数に強く依存した障壁高が実現されたものと解釈される。これは、本研究グループが表面・界面準位の起源として提唱している「統一DIGSモデル」を支持する結果である。 (3)ナノ金属ドット-半導体接合では、ショットキー界面が作るポテンシャルが周囲の半導体自由表面のフェルミ準位ピンニングの影響を受け、電流輸送やゲート制御性が劣化すること、および、この解決には周囲の半導体表面のフェルミ準位ピンニングの緩和が必須であることを示した。また、フェルミ順位ピンニング緩和の手段として、超薄膜シリコン界面制御技術を検討し、これがナノスケール領域においても有効である事を示した。 (4)本グループで提案したショットキーインプレーンゲート(IPG)およびラップゲート(WPG)構造と、ナノ金属ドットによる単電子メモリ回路を提案し、そのデバイスプロセスを確立した。また、WPG単電子トランジスタを用いたインバータ回路を試作し、明確な信号反転動作を確認した。

Research Products

(47 results)

All Other

All Publications (47 results)

[Publications] H. Fujikura: "Control of Dot Size and Tunneling Barrier Profile in In_<0.53>Ga_<0.47>As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates"Japanese Journal of Applied Physics. 38. 421-424 (1999)
[Publications] H. Hasegawa: "Fermi Level Pinning and Schottky Barrier Height Control at Metal-Semiconductor Interfaces of InP and Related Materials"Japanese Journal of Applied Physics. 38. 1098-1102 (1999)
[Publications] T. Muranaka: "Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates"Japanese Journal of Applied Physics. 38. 1071-1074 (1999)
[Publications] H. Fujikura: "Extra-Side-Facet Control in Selective Molecular Beam Epitaxial Growth of InGaAs Ridge Quantum Wires for Improvement of Wire Uniformity"Japanese Journal of Applied Physics. 38. 1067-1070 (1999)
[Publications] M. B. Takeyama: "Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP"Japanese Journal of Applied Physics. 38. 1115-1118 (1999)
[Publications] C. Kaneshiro: "Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes"Japanese Journal of Applied Physics. 38. 1147-1152 (1999)
[Publications] T. Sato: "The Strong Correlation Between Interface Microstructure and Barrier Height in n-InP Schottky Contacts Formed by In Situ Electrochemical Process"Japanese Journal of Applied Physics. 38. 1103-1106 (1999)
[Publications] H. Takahashi: "X-ray Photoelectron Spectroscopy and Ultrahigh Vacuum Contactless Capacitance-Voltage Characterization of Novel Oxide-Free InP Passivation Process Using a Silicon Surface Quantum Well"Japanese Journal of Applied Physics. 38. 1128-1132 (1999)
[Publications] Y. Sato: "Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Three Schottky Wrap Gates"Japanese Journal of Applied Physics. 38. 410-414 (1999)
[Publications] J. Nakamura: "Transport Properties of Schottky In-Plane-Gate GaAs Single and Coupled Quantum Wire Transistors"IOP conference series. 162. 409-414 (1999)
[Publications] N. Ono: "Study of Selective MBE Growth on Patterned (001) InP Substrates Toward Realization of <100>-Oriented InGaAs Ridge Quantum Wires"IOP conference series. 162. 385-390 (1999)
[Publications] C. Kaneshiro: "Realization of Strongly Metal-Dependent Schottky Barrier Heights on n-GaAs by In Situ Electrochemical Process"IOP conference series. 162. in press (1999)
[Publications] T. Muranaka: "Realization of InP-Based InGaAs Single Electron Transistors on Wires and Dots Grown by Selective MBE"Microelectronic Engineering. 47. 201-203 (1999)
[Publications] H. Okada: "GaAs-Based Single Electron Logic and Memory Devices Using Electro-Deposited Nanometer Schottky Gates"Microelectronic Engineering. 285-287 (1999)
[Publications] H. Sai: "Growth of Device Quality InGaP/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy using Tertiarybutylphosphine"Solid State Electron. 1541-1546 (1999)
[Publications] H. Sai: "Study of Reflection High-Energy Electron Diffraction Oscillation for Optimization of Tertiarybutylphosphine-Based Molecular Beam Epitaxial Growth of In_<0.48>Ga_<0.52>P on GaAs"Japanese Journal of Applied Physics. 38. 824-831 (1999)
[Publications] H. Sai: "Gas Source Molecular Beam Epitaxial Growth of In_<1-x>Ga_xP on GaAs Using Tertiarybutylphosphine"Japanese Journal of Applied Physics. 38. 151-158 (1999)
[Publications] H. Hasegawa: "Properties of Metal-Semiconductor Interfaces Formed on n-type GaN"Japanese Journal of Applied Physics. 38. 2637-2639 (1999)
[Publications] T. Sato: "Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition"Japanese Journal of Applied Physics. 38. 2448-2452 (1999)
[Publications] T. Yoshida: "A Novel Non-Destructive Characterization Method of Electronic Properties of Pre- and Post-Processing Silicon Surfaces Based on Ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements"Japanese Journal of Applied Physics. 38. 2349-2354 (1999)
[Publications] M. Mutoh: "Effects of Initial Surface Reconstruction on Silicon Interface Control Layer Based Passivation of (001) GaAs Surfaces Studied in an Ultrahigh-Vacuum Multichamber System"Japanese Journal of Applied Physics. 38. 2538-2543 (1999)
[Publications] H. Takahashi: "In-situ Characterization Technique of Compound Semiconductor Heterostructure Growth and Device Processing Steps Based on UHV Contactless Capacitance-Voltage Measurement"Solid-State Electronics. 43. 1483-1488 (1999)
[Publications] Y. Koyama: "Formation Process and Properties of Schottky and Ohmic Contacts on n-type GaN form Field Effect Transistor Applications"Solid-State Electronics. 43. 1483-1488 (1999)
[Publications] A. Hamamatsu: "A. Hamamatsu, C. Kaneshiro, H. Fujikura and H. Hasegawa, "Formation of <001>-Aligned Nano-Scale Pores on (001) n-InP Surfaces by Photoelectrochemical Anodization in HCl"Journal of Electroanalytical Chemistry. 223-229 (1999)
[Publications] B. Adamowicz: "Electronic Properties of Al_xGa_<1-x>As Surface Passivation by Ultrathin Silicon Interface Control Layer"Applied Surface Science. 141. 326-332 (1999)
[Publications] B. Adamowicz: "Computer simulation of the surface photovoltage on Si and GaAs surfaces with U-shaped surface state continuum"Vacuum. 54. 137-177 (1999)
[Publications] H. Hasegawa: "Molecular-Beam Epitaxy and Device Applications of III-V Semiconductor Nanowires"MRS Bulletin. 24. 25-30 (1999)
[Publications] H. Hasegawa: "Properties of nanometer-sized metal-semiconductor interfaces of GaAs and InP formed by an in situ electrochemical process"Journal of Vacuum Science and Technology. B17. 1856-1866 (1999)
[Publications] H. Okada: "Characterization of GaAs Schottky in-plane gate quantum wire transistors for switching of quantized conductance"Physica B. 272. 123-126 (1999)
[Publications] S. Kasai: "Conductance oscillation characteristics of GaAs Schottky wrap-gate single-electron transistors"Physica B. 272. 88-91 (1999)
[Publications] H. Fujikura: "Selective growth of quantum wire-dot coupled structures with novel high index facets for InGaAs single electron transistor arrays"Microelectronics Journal. 30. 397-401 (1999)
[Publications] T. Tanaka: "A novel GaAs flip-chip power MODFET with hjgh gain and efficiency"Solid-State Electronics. 43. 1405-1411 (1999)
[Publications] D. Ueda: "Implementation of GaAs monolithic microwave integrated circuits with on-chip BST capacitors"Journal of Electroceramics. 3. 105-113 (1999)
[Publications] H. Hasegawa: "Advanced mesoscopic device concepts and technology"Microelectronic Engineering. (in press). (2000)
[Publications] H. Hasegawa: "MBE Growth and Applications of Silicon Interface Control Layers"Thin Solid Films. (in press). (2000)
[Publications] H. Hasegawa: "Unpinning of Fermi Level in Nanometer-Sized Schottky Contacts on GaAs and InP"Applied Surface Science. (in press). (2000)
[Publications] H. Fujikura: "Formation of Device-Oriented InGaAs Coupled Quantum Structures by Selective MBE Growth on Patterned InP Substrates"Physica E. (in press). (2000)
[Publications] T. Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in situ Electrochemical Process"Japanese Journal Applied Physics. (in press). (2000)
[Publications] M. Iwaya: "Chemical and Electrochemical Nanofabrication Processes for Schottky In-Plane Gate GaAs Single and Coupled Quantum Wire Transistors"Japanese Journal Applied Physics. (in press). (2000)
[Publications] S. Kasai: "GaAs quantum wire transistors and single electron transistors using Schottky wrap gates for quantum integrated circuits"IOP conference series. (in press). (2000)
[Publications] T. Muranaka: "Selective MBE growth of InGaAs quantum wire-dot coupled structures with controlled double-barrier potential profiles"IPO conference series. (in press). (2000)
[Publications] N. Negoro: "Scanning Tunneling Microscopy and Spectroscopy Study of Ultrathin Si Interface Control Layers Grown on (001) GaAs for Surface Passivation"Applied Surface Science. (in press). (2000)
[Publications] S. Ootomo: "Nitridation of GaP (100) Surfaces by Rf Nitrogen Radicals and by ECR Nitrogen Plasma"Japanese Journal of Applied Physics. 39(in press). (2000)
[Publications] M. Yamada: "Fabrication and Characterization of Novel Oxide-Free InP MISFET Having an Ultra-Narrow Si Surface Quantum Well"Japanese Journal of Applied Physics. 39(in press). (2000)
[Publications] R. Nakasaki: "Insulator-GaN Interface Structures Formed by Plasma-Assisted Chemical Vapor Deposition"Physica E. (in press). (2000)
[Publications] C. Jiang: "Vertical Barrier Layer Formation during Selective MBE Growth of InGaAs Ridge Quantum Wires on InP Patterned Substrates"Physica E. (in press). (2000)
[Publications] S. Anantathanasarn: "Surface Passivation of GaAs by Ultra-thin Cubic GaN Layer"Applied Surface Science. (in press). (2000)

1999 Fiscal Year Annual Research Report

ナノスケールショットキー接合による金属-化合物半導体界面の物性制御と応用

Principal Investigator

長谷川 英機 北海道大学, 大学院・工学研究科, 教授 (60001781)

Research Products

[Publications] H. Fujikura: "Control of Dot Size and Tunneling Barrier Profile in In_<0.53>Ga_<0.47>As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates"Japanese Journal of Applied Physics. 38. 421-424 (1999)

[Publications] H. Hasegawa: "Fermi Level Pinning and Schottky Barrier Height Control at Metal-Semiconductor Interfaces of InP and Related Materials"Japanese Journal of Applied Physics. 38. 1098-1102 (1999)

[Publications] T. Muranaka: "Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates"Japanese Journal of Applied Physics. 38. 1071-1074 (1999)

[Publications] H. Fujikura: "Extra-Side-Facet Control in Selective Molecular Beam Epitaxial Growth of InGaAs Ridge Quantum Wires for Improvement of Wire Uniformity"Japanese Journal of Applied Physics. 38. 1067-1070 (1999)

[Publications] M. B. Takeyama: "Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP"Japanese Journal of Applied Physics. 38. 1115-1118 (1999)

[Publications] C. Kaneshiro: "Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes"Japanese Journal of Applied Physics. 38. 1147-1152 (1999)

[Publications] T. Sato: "The Strong Correlation Between Interface Microstructure and Barrier Height in n-InP Schottky Contacts Formed by In Situ Electrochemical Process"Japanese Journal of Applied Physics. 38. 1103-1106 (1999)

[Publications] H. Takahashi: "X-ray Photoelectron Spectroscopy and Ultrahigh Vacuum Contactless Capacitance-Voltage Characterization of Novel Oxide-Free InP Passivation Process Using a Silicon Surface Quantum Well"Japanese Journal of Applied Physics. 38. 1128-1132 (1999)

[Publications] Y. Sato: "Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Three Schottky Wrap Gates"Japanese Journal of Applied Physics. 38. 410-414 (1999)

[Publications] J. Nakamura: "Transport Properties of Schottky In-Plane-Gate GaAs Single and Coupled Quantum Wire Transistors"IOP conference series. 162. 409-414 (1999)

[Publications] N. Ono: "Study of Selective MBE Growth on Patterned (001) InP Substrates Toward Realization of <100>-Oriented InGaAs Ridge Quantum Wires"IOP conference series. 162. 385-390 (1999)

[Publications] C. Kaneshiro: "Realization of Strongly Metal-Dependent Schottky Barrier Heights on n-GaAs by In Situ Electrochemical Process"IOP conference series. 162. in press (1999)

[Publications] T. Muranaka: "Realization of InP-Based InGaAs Single Electron Transistors on Wires and Dots Grown by Selective MBE"Microelectronic Engineering. 47. 201-203 (1999)

[Publications] H. Okada: "GaAs-Based Single Electron Logic and Memory Devices Using Electro-Deposited Nanometer Schottky Gates"Microelectronic Engineering. 285-287 (1999)

[Publications] H. Sai: "Growth of Device Quality InGaP/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy using Tertiarybutylphosphine"Solid State Electron. 1541-1546 (1999)

[Publications] H. Sai: "Study of Reflection High-Energy Electron Diffraction Oscillation for Optimization of Tertiarybutylphosphine-Based Molecular Beam Epitaxial Growth of In_<0.48>Ga_<0.52>P on GaAs"Japanese Journal of Applied Physics. 38. 824-831 (1999)

[Publications] H. Sai: "Gas Source Molecular Beam Epitaxial Growth of In_<1-x>Ga_xP on GaAs Using Tertiarybutylphosphine"Japanese Journal of Applied Physics. 38. 151-158 (1999)

[Publications] H. Hasegawa: "Properties of Metal-Semiconductor Interfaces Formed on n-type GaN"Japanese Journal of Applied Physics. 38. 2637-2639 (1999)

[Publications] T. Sato: "Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition"Japanese Journal of Applied Physics. 38. 2448-2452 (1999)

[Publications] T. Yoshida: "A Novel Non-Destructive Characterization Method of Electronic Properties of Pre- and Post-Processing Silicon Surfaces Based on Ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements"Japanese Journal of Applied Physics. 38. 2349-2354 (1999)

[Publications] M. Mutoh: "Effects of Initial Surface Reconstruction on Silicon Interface Control Layer Based Passivation of (001) GaAs Surfaces Studied in an Ultrahigh-Vacuum Multichamber System"Japanese Journal of Applied Physics. 38. 2538-2543 (1999)

[Publications] H. Takahashi: "In-situ Characterization Technique of Compound Semiconductor Heterostructure Growth and Device Processing Steps Based on UHV Contactless Capacitance-Voltage Measurement"Solid-State Electronics. 43. 1483-1488 (1999)

[Publications] Y. Koyama: "Formation Process and Properties of Schottky and Ohmic Contacts on n-type GaN form Field Effect Transistor Applications"Solid-State Electronics. 43. 1483-1488 (1999)

[Publications] A. Hamamatsu: "A. Hamamatsu, C. Kaneshiro, H. Fujikura and H. Hasegawa, "Formation of <001>-Aligned Nano-Scale Pores on (001) n-InP Surfaces by Photoelectrochemical Anodization in HCl"Journal of Electroanalytical Chemistry. 223-229 (1999)

[Publications] B. Adamowicz: "Electronic Properties of Al_xGa_<1-x>As Surface Passivation by Ultrathin Silicon Interface Control Layer"Applied Surface Science. 141. 326-332 (1999)

[Publications] B. Adamowicz: "Computer simulation of the surface photovoltage on Si and GaAs surfaces with U-shaped surface state continuum"Vacuum. 54. 137-177 (1999)

[Publications] H. Hasegawa: "Molecular-Beam Epitaxy and Device Applications of III-V Semiconductor Nanowires"MRS Bulletin. 24. 25-30 (1999)

[Publications] H. Hasegawa: "Properties of nanometer-sized metal-semiconductor interfaces of GaAs and InP formed by an in situ electrochemical process"Journal of Vacuum Science and Technology. B17. 1856-1866 (1999)

[Publications] H. Okada: "Characterization of GaAs Schottky in-plane gate quantum wire transistors for switching of quantized conductance"Physica B. 272. 123-126 (1999)

[Publications] S. Kasai: "Conductance oscillation characteristics of GaAs Schottky wrap-gate single-electron transistors"Physica B. 272. 88-91 (1999)

[Publications] H. Fujikura: "Selective growth of quantum wire-dot coupled structures with novel high index facets for InGaAs single electron transistor arrays"Microelectronics Journal. 30. 397-401 (1999)

[Publications] T. Tanaka: "A novel GaAs flip-chip power MODFET with hjgh gain and efficiency"Solid-State Electronics. 43. 1405-1411 (1999)

[Publications] D. Ueda: "Implementation of GaAs monolithic microwave integrated circuits with on-chip BST capacitors"Journal of Electroceramics. 3. 105-113 (1999)

[Publications] H. Hasegawa: "Advanced mesoscopic device concepts and technology"Microelectronic Engineering. (in press). (2000)

[Publications] H. Hasegawa: "MBE Growth and Applications of Silicon Interface Control Layers"Thin Solid Films. (in press). (2000)

[Publications] H. Hasegawa: "Unpinning of Fermi Level in Nanometer-Sized Schottky Contacts on GaAs and InP"Applied Surface Science. (in press). (2000)

[Publications] H. Fujikura: "Formation of Device-Oriented InGaAs Coupled Quantum Structures by Selective MBE Growth on Patterned InP Substrates"Physica E. (in press). (2000)

[Publications] T. Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in situ Electrochemical Process"Japanese Journal Applied Physics. (in press). (2000)

[Publications] M. Iwaya: "Chemical and Electrochemical Nanofabrication Processes for Schottky In-Plane Gate GaAs Single and Coupled Quantum Wire Transistors"Japanese Journal Applied Physics. (in press). (2000)

[Publications] S. Kasai: "GaAs quantum wire transistors and single electron transistors using Schottky wrap gates for quantum integrated circuits"IOP conference series. (in press). (2000)

[Publications] T. Muranaka: "Selective MBE growth of InGaAs quantum wire-dot coupled structures with controlled double-barrier potential profiles"IPO conference series. (in press). (2000)

[Publications] N. Negoro: "Scanning Tunneling Microscopy and Spectroscopy Study of Ultrathin Si Interface Control Layers Grown on (001) GaAs for Surface Passivation"Applied Surface Science. (in press). (2000)

[Publications] S. Ootomo: "Nitridation of GaP (100) Surfaces by Rf Nitrogen Radicals and by ECR Nitrogen Plasma"Japanese Journal of Applied Physics. 39(in press). (2000)

[Publications] M. Yamada: "Fabrication and Characterization of Novel Oxide-Free InP MISFET Having an Ultra-Narrow Si Surface Quantum Well"Japanese Journal of Applied Physics. 39(in press). (2000)

[Publications] R. Nakasaki: "Insulator-GaN Interface Structures Formed by Plasma-Assisted Chemical Vapor Deposition"Physica E. (in press). (2000)

[Publications] C. Jiang: "Vertical Barrier Layer Formation during Selective MBE Growth of InGaAs Ridge Quantum Wires on InP Patterned Substrates"Physica E. (in press). (2000)

[Publications] S. Anantathanasarn: "Surface Passivation of GaAs by Ultra-thin Cubic GaN Layer"Applied Surface Science. (in press). (2000)

長谷川英機北海道大学, 大学院・工学研究科, 教授 (60001781)