2000 Fiscal Year Annual Research Report

ナノスケールショットキー接合による金属-化合物半導体界面の物性制御と応用

Research Project

Project/Area Number	11450115
Research Institution	HOKKAIDO UNIVERSITY
Principal Investigator	長谷川英機北海道大学, 大学院・工学研究科, 教授 (60001781)
Co-Investigator(Kenkyū-buntansha)	江潮北海道大学, 量子界面エレクトロニクス研究センター, 非常勤研究員講師(研究機関研究員) 葛西誠也北海道大学, 大学院・工学研究科, 助手 (30312383) 橋詰保北海道大学, 量子界面エレクトロニクス研究センター, 助教授 (80149898)
Keywords	電気化学プロセス / ナノショットキー接合 / ショットキー極限 / フェルミ準位ピンニング / 化合物半導体 / ナノ金属ドットアレイ / 導電性プローブAFM / 量子デバイス
Research Abstract	本研究の目的は、化合物半導体上にナノスケールでサイズ制御された微細ショットキー接合を形成する手法により、フェルミ準位ピンニングを除去し、金属-半導体界面の物性を制御する技術を創り出すこと、および、そのデバイス応用にある。本研究の成果を以下に示す。 1.電気化学プロセスにより形成した化合物半導体ショットキー界面は、ナノ金属ドットの集合体により形成されること、および、印加パルス条件により、ドット粒径、ドット数を制御可能であることを示した。さらに、各々の金属ドットが小さく均一性が高くなるに従い、金属-半導体界面のフェルミ準位ピンニングが緩和し、障壁高さの金属仕事関数依存性が増大することを実験的に見出し、ショットキー極限の実現による障壁高制御が可能であることを示した。 2.電気化学プロセスと電子線露光法により、ゲート長数十nmのナノショットキーゲート、および、数十nmのドット径を有する高均一ナノ金属ドットアレイの形成に成功した。 3.単一金属ドットナノショットキー接合の電気的特性を、導電性プローブ原子間力顕微鏡を用いて評価すると共に、ナノショットキー特性解析シミュレーターを開発し、その電流輸送機構を明らかにした。同時に、単一金属ドット・半導体界面においても、ドットサイズの縮小に伴い障壁高さの金属仕事関数依存性が高まること、および、電極周囲の表面フェルミ準位ピンニングがナノショットキー接合の電流輸送やポテンシャル制御性に大きく影響することを見出した。 4.電気化学プロセスによるナノショットキーゲートとナノ金属ドット形成技術を用い、GaAsおよびInGaAs量子細線トランジスタ、単電子トランジスタ、単電子メモリ回路などの量子デバイスを試作・評価した。各素子は、制御されたショットキー界面を反映した動作を実現し、本技術の有効性が実証された。

Research Products

(33 results)

All Other

All Publications (33 results)

[Publications] H.Hasegawa: "Unpinning of Fermi level in nanometer-sized Schottky contacts on GaAs and InP"Applied Surface Science. 166. 92-96 (2000)
[Publications] H.Takahashi: "In situ UHV contactless C-V and XPS characterization of surface passivation process for InP using a partially nitrided Si interface control layer"Applied Surface Science. 166. 526-531 (2000)
[Publications] H.Fujikura: "Formation of device-oriented InGaAs coupled quantum structures by selective MBE growth on patterned InP substrates"Physica E. 7. 864-869 (2000)
[Publications] C.Jiang: "Vertical barrier layer formation during selective MBE growth of InGaAs ridge quantum wires on InP patterned substrates"Physica E. 7. 902-906 (2000)
[Publications] H.Hasegawa: "Advanced mesoscopic device concepts and technology"Microelectronic Engineering. 53. 29-36 (2000)
[Publications] N.Negoro: "Scanning tunneling microscopy and spectroscopy study of ultrathin Si interface control layers grown on (001) GaAs for surface passivation"Applied Surface Science. 159/160. 292-300 (2000)
[Publications] S.Anantathanasarn: "Surface passivation of GaAs by ultra-thin cubic GaN layer"Applied Surface Science. 159/160. 456-461 (2000)
[Publications] T.Shiozawa: "Correlation between interface state properties and electron transport at ultrathin insulator/Si interfaces"Applied Surface Science. 159/160. 98-103 (2000)
[Publications] H.Hasegawa: "MBE growth and applications of silicon interface control layers"Thin Solid Films. 367. 58-67 (2000)
[Publications] H.Hasegawa: "Effects of gap states on scanning tunneling spectra observed on (110) - and (001) - oriented clean surfaces and ultrathin Si layer covered surfaces of GaAs prepared by molecular beam epitaxy"Journal of Vacuum Science & Technology B. 18. 2100-2108 (2000)
[Publications] M.Lyawa: "Chemical and Electrochemical Nanofabrication Processes for Schottky In-Plane Gate GaAs Single and Coupled Quantum Wire Transistors"Jpn. J. Appl. Phys.. 39. 4651-4652 (2000)
[Publications] H.Fujikura: "Electrochemical Formation of Uniform and Straight Nano-Pore Arrays on (001) InP Surfaces and Their Photoluminescence Characterizations"Jpn. J. Appl. Phys.. 39. 4616-4620 (2000)
[Publications] Y.Yoshida: "Ultrahigh-Vacuum Contactless Capacitance-Voltage Characterization of Hydrogen Terminated-Free Silicon Surfaces"Jpn. J. Appl. Phys.. 39. 4504-4508 (2000)
[Publications] T.Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process"Jpn. J. Appl. Phys.. 39. 4609-4615 (2000)
[Publications] M.Yamada: "Fabrication and Characterization of Novel Oxide-Free InP Metal-Insulator-Semiconductor FETs Having an Ultra Narrow Si Surface Quantum Well"Jpn. J. Appl. Phys.. 39. 2439-2443 (2000)
[Publications] S.Ootomo: "Nitridation of GaP (100) Surfaces by rf Nitrogen Radicals and by Electron Cyclotron Resonance Nitrogen Plasma"Jpn. J. Appl. Phys.. 39. 2407-2413 (2000)
[Publications] T.Muranaka: "Selective MBE Growth of InGaAs Quantum Wire-Dot Coupled Structures with Controlled Double-Barrier Potential Profiles"Inst. Phys. Conf. Ser.. 166. 187-190 (2000)
[Publications] S.Kasai: "GaAs Quantum Wire Transistors and Single Electron Transistors using Schottky Wrap Gates for Quantum Integrated Circuits"Inst. Phys. Conf. Ser.. 166. 219-222 (2000)
[Publications] T.Muranaka: "Origin of Non-Uniformity in MBE Grown Nanometer-Sized InGaAs Ridge Quantum Wires and Its Removal by Atomic Hydrogen-Assisted Cleaning"Thin Solid Films. 380. 189-191 (2000)
[Publications] B.Adamowicz: "Analysis of photoluminescence efficiency and surface recombination velocity of MBE-grown AlGaAs layers"Thin Solid Films. 367. 180-183 (2000)
[Publications] B.Adamowicz: "Computer analysis of photon-induced non-equilibrium phenomena at Si and AlGaAs surfaces"Vacuum. 57. 111-120 (2000)
[Publications] B.Adamowicz: "COMPUTER ANALYSIS OF THE FERMI LEVEL BEHAVIOR AT SiO_2/n-GaAs INTERFACES"Electron Technology. 33. 249-252 (2000)
[Publications] T.Yoshida: "Realization of UHV-CompativleDefect-Free Hydorogen Terminated Silicon Surfaces with the Use of UHV Contactless Capacitance-Voltage Method"Applied Surface Science. (in press). (2001)
[Publications] S.Kasai: "Conductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown (001) Surfaces of III-V Compound Semiconductors"Applied Surface Science. (in press). (2001)
[Publications] T.Sato: "Current Transport and Capacitance-Voltage Characteristics of GaAs and InP Nanometer-Sized Schottky Contacts Formed by in situ Electrochemical Process"Applied Surface Science. (in press). (2001)
[Publications] S.Kasai: "GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots"Jpn. J. Appl. Phys.. 40(in press). (2001)
[Publications] T.Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices"Jpn. J. Appl. Phys.. 40(in press). (2001)
[Publications] T.Muranaka: "Characterization and Optimization of Atomic Hydrogen Cleaning of InP Surface for Selective MBE growth of InGaAs Quantum Structure Arrays"Jpn. J. Appl. Phys.. 40(in press). (2001)
[Publications] F.Ishikawa: "Bulk and Interface Deep Levels in InGap/GaAs Heterostructures Grown by Tertiarybutyl Phosphine-Based Gas Source Molecular Beam Epitaxy"Japanese Journal of Applied Physics. 40(in press). (2001)
[Publications] Z.Jin: "In-Situ XPS Study of Etch Chemistry of Methane-Based RIBE of InP Using N_2"Japanese Journal of Applied Physics. 40(in press). (2001)
[Publications] C.Jiang: "Ridge Uniformity Improvement of Sub-10nm InGaAs Ridge Quantum Wires by Selective MBE on Patterned InP"Japanese Journal of Applied Physics. 40(in press). (2001)
[Publications] H.Okada: "Novel Single Electron Memory Device Using Metal Nano-Dots and Schottky In Plane Gate Quantum Wire"Japanese Journal of Applied Physics. 40(in press). (2001)
[Publications] 謝永桂: "InP系高速デバイス用多層エピタキシャル構造のSi超薄膜による表面不活性化"電子情報通信学会誌C(掲載決定). (2001)

2000 Fiscal Year Annual Research Report

ナノスケールショットキー接合による金属-化合物半導体界面の物性制御と応用

Principal Investigator

長谷川 英機 北海道大学, 大学院・工学研究科, 教授 (60001781)

Research Products

[Publications] H.Hasegawa: "Unpinning of Fermi level in nanometer-sized Schottky contacts on GaAs and InP"Applied Surface Science. 166. 92-96 (2000)

[Publications] H.Takahashi: "In situ UHV contactless C-V and XPS characterization of surface passivation process for InP using a partially nitrided Si interface control layer"Applied Surface Science. 166. 526-531 (2000)

[Publications] H.Fujikura: "Formation of device-oriented InGaAs coupled quantum structures by selective MBE growth on patterned InP substrates"Physica E. 7. 864-869 (2000)

[Publications] C.Jiang: "Vertical barrier layer formation during selective MBE growth of InGaAs ridge quantum wires on InP patterned substrates"Physica E. 7. 902-906 (2000)

[Publications] H.Hasegawa: "Advanced mesoscopic device concepts and technology"Microelectronic Engineering. 53. 29-36 (2000)

[Publications] N.Negoro: "Scanning tunneling microscopy and spectroscopy study of ultrathin Si interface control layers grown on (001) GaAs for surface passivation"Applied Surface Science. 159/160. 292-300 (2000)

[Publications] S.Anantathanasarn: "Surface passivation of GaAs by ultra-thin cubic GaN layer"Applied Surface Science. 159/160. 456-461 (2000)

[Publications] T.Shiozawa: "Correlation between interface state properties and electron transport at ultrathin insulator/Si interfaces"Applied Surface Science. 159/160. 98-103 (2000)

[Publications] H.Hasegawa: "MBE growth and applications of silicon interface control layers"Thin Solid Films. 367. 58-67 (2000)

[Publications] H.Hasegawa: "Effects of gap states on scanning tunneling spectra observed on (110) - and (001) - oriented clean surfaces and ultrathin Si layer covered surfaces of GaAs prepared by molecular beam epitaxy"Journal of Vacuum Science & Technology B. 18. 2100-2108 (2000)

[Publications] M.Lyawa: "Chemical and Electrochemical Nanofabrication Processes for Schottky In-Plane Gate GaAs Single and Coupled Quantum Wire Transistors"Jpn. J. Appl. Phys.. 39. 4651-4652 (2000)

[Publications] H.Fujikura: "Electrochemical Formation of Uniform and Straight Nano-Pore Arrays on (001) InP Surfaces and Their Photoluminescence Characterizations"Jpn. J. Appl. Phys.. 39. 4616-4620 (2000)

[Publications] Y.Yoshida: "Ultrahigh-Vacuum Contactless Capacitance-Voltage Characterization of Hydrogen Terminated-Free Silicon Surfaces"Jpn. J. Appl. Phys.. 39. 4504-4508 (2000)

[Publications] T.Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process"Jpn. J. Appl. Phys.. 39. 4609-4615 (2000)

[Publications] M.Yamada: "Fabrication and Characterization of Novel Oxide-Free InP Metal-Insulator-Semiconductor FETs Having an Ultra Narrow Si Surface Quantum Well"Jpn. J. Appl. Phys.. 39. 2439-2443 (2000)

[Publications] S.Ootomo: "Nitridation of GaP (100) Surfaces by rf Nitrogen Radicals and by Electron Cyclotron Resonance Nitrogen Plasma"Jpn. J. Appl. Phys.. 39. 2407-2413 (2000)

[Publications] T.Muranaka: "Selective MBE Growth of InGaAs Quantum Wire-Dot Coupled Structures with Controlled Double-Barrier Potential Profiles"Inst. Phys. Conf. Ser.. 166. 187-190 (2000)

[Publications] S.Kasai: "GaAs Quantum Wire Transistors and Single Electron Transistors using Schottky Wrap Gates for Quantum Integrated Circuits"Inst. Phys. Conf. Ser.. 166. 219-222 (2000)

[Publications] T.Muranaka: "Origin of Non-Uniformity in MBE Grown Nanometer-Sized InGaAs Ridge Quantum Wires and Its Removal by Atomic Hydrogen-Assisted Cleaning"Thin Solid Films. 380. 189-191 (2000)

[Publications] B.Adamowicz: "Analysis of photoluminescence efficiency and surface recombination velocity of MBE-grown AlGaAs layers"Thin Solid Films. 367. 180-183 (2000)

[Publications] B.Adamowicz: "Computer analysis of photon-induced non-equilibrium phenomena at Si and AlGaAs surfaces"Vacuum. 57. 111-120 (2000)

[Publications] B.Adamowicz: "COMPUTER ANALYSIS OF THE FERMI LEVEL BEHAVIOR AT SiO_2/n-GaAs INTERFACES"Electron Technology. 33. 249-252 (2000)

[Publications] T.Yoshida: "Realization of UHV-CompativleDefect-Free Hydorogen Terminated Silicon Surfaces with the Use of UHV Contactless Capacitance-Voltage Method"Applied Surface Science. (in press). (2001)

[Publications] S.Kasai: "Conductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown (001) Surfaces of III-V Compound Semiconductors"Applied Surface Science. (in press). (2001)

[Publications] T.Sato: "Current Transport and Capacitance-Voltage Characteristics of GaAs and InP Nanometer-Sized Schottky Contacts Formed by in situ Electrochemical Process"Applied Surface Science. (in press). (2001)

[Publications] S.Kasai: "GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots"Jpn. J. Appl. Phys.. 40(in press). (2001)

[Publications] T.Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices"Jpn. J. Appl. Phys.. 40(in press). (2001)

[Publications] T.Muranaka: "Characterization and Optimization of Atomic Hydrogen Cleaning of InP Surface for Selective MBE growth of InGaAs Quantum Structure Arrays"Jpn. J. Appl. Phys.. 40(in press). (2001)

[Publications] F.Ishikawa: "Bulk and Interface Deep Levels in InGap/GaAs Heterostructures Grown by Tertiarybutyl Phosphine-Based Gas Source Molecular Beam Epitaxy"Japanese Journal of Applied Physics. 40(in press). (2001)

[Publications] Z.Jin: "In-Situ XPS Study of Etch Chemistry of Methane-Based RIBE of InP Using N_2"Japanese Journal of Applied Physics. 40(in press). (2001)

[Publications] C.Jiang: "Ridge Uniformity Improvement of Sub-10nm InGaAs Ridge Quantum Wires by Selective MBE on Patterned InP"Japanese Journal of Applied Physics. 40(in press). (2001)

[Publications] H.Okada: "Novel Single Electron Memory Device Using Metal Nano-Dots and Schottky In Plane Gate Quantum Wire"Japanese Journal of Applied Physics. 40(in press). (2001)

[Publications] 謝永桂: "InP系高速デバイス用多層エピタキシャル構造のSi超薄膜による表面不活性化"電子情報通信学会誌C(掲載決定). (2001)

長谷川英機北海道大学, 大学院・工学研究科, 教授 (60001781)