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2000 Fiscal Year Final Research Report Summary

Control of Metal-Compound Semiconductor Interfaces by Formation of Nano-Scale Schottky Contacts and Its Application

Research Project

Project/Area Number 11450115
Research Category

Grant-in-Aid for Scientific Research (B).

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionHOKKAIDO UNIVERSITY

Principal Investigator

HASEGAWA Hideki  Hokkaido Univ., Grad.School of Electron.and Info.Eng., Pro., 大学院・工学研究科, 教授 (60001781)

Co-Investigator(Kenkyū-buntansha) JIANG Chao  Hokkaido Univ., Res.Center of Interface Quantum Electronics, Post Doctoral Res., 量子界面エレクトロニクス研究センター, 非常勤研究員講師(研究機関研究員)
KASAI Seiya  Hokkaido Univ., Grad.School of Electron.and Info.Eng., Inst., 大学院・工学研究科, 助手 (30312383)
HASHIZUMA Tamotsu  Hokkaido Univ., Res.Center of Interface Quantum Electronics, Asso. Pro, 量子界面エレクトロニクス研究センター, 助教授 (80149898)
Project Period (FY) 1999 – 2000
Keywordselectrochemical process / nano-Schottky contact / Schottky limit / Fermi level pinning / compound semiconductor / nano-metal dot array / conductive prove AFM / quantum device
Research Abstract

The purpose of this research was attempt to control metal-compound semiconductor interfaces by forming size-controlled nano-Schottky contacts and thereby removing the Fermi level pinning. The main results obtained are listed below :
(1)Metal-semiconductor(M-S)interfaces formed by an electrochemical process was found to consist of metal nano-dots. By changing applied pulse conditions, dot size and the number of the dots could be controlled. Formation of small and uniform-size-metal dot relaxes Fermi level pinning at M-S interfaces and enhanced the metal-workfunction dependence of Schottky barrier heights. This opened up a possibility to control Schottky barrier heights toward the Schottky limit.
(2)By the combination of the electrochemical process and electron-beam lithography techniques, a few ten nanometer-size nano-Schottky line gates and a few ten nanometer-sized highly uniform nano-dot arrays were successfully formed.
(3)Current transport through M-S interfaces in single metal nano-dot-compound semiconductor systems was investigated by a conductive tip atomic force microscopy(AFM). The transport mechanism was theoretically studied by a newly developed device simulator for nano-Schottky interfaces. In the single metal-dot nano-Schottky contacts, reduction of the metal nano-dot size enhanced the metal-workfunction dependence. However, environmental surface Fermi level pinning around the nano-Schottky gates was found to affect strongly the potential control.
(4)Nano-Schottky interface formation technology utilizing the electrochemical process were applied to realization of various quantum devices including GaAs-and InGaAs-based quantum wire transistors, single electron devices and memory devices. The fabricated devices showed proper and designed operations, and the effectiveness of the present technology was confirmed.

  • Research Products

    (128 results)

All Other

All Publications (128 results)

  • [Publications] Y.Satoh: "Voltage Gain in GaAs-Based Lateral Single Electron Transistors Having Three Schottky Wrap Gates"Japanese Journal of Applied Physics. 38. 415-417 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Fujikura: "Control of Dot Size and Tunneling Barrier Profile in In_<0.53>Ga_<0.47>As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates"Japanese Journal of Applied Physics. 38. 421-424 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Sai: "Study of Reflection High-Energy Electron Diffraction Oscillation for Optimization of Tertiarybutylposphine-Based Molectular Beam Epitaxial Growth of In_<0.48>Ga_<0.52>P on GaAs"Japanese Journal of Applied Physics. 38. 824-831 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Fujikura: "Extra-Side-Facet Control in Selective Molecular Beam Epitaxial Growth of InGaAs Ridge Quantum Wires for Improvement of Wire Uniformity"Japanese Journal of Applied Physics. 38. 1067-1070 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Muranaka: "Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates"Japanese Journal of Applied Physics. 38. 1071-1074 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Hasegawa: "Fermi Level Pinning and Schottky Barrier Height Control at Metal Semiconductor Interfaces of GaN and Related Materials"Japanese Journal of Applied Physics. 38. 1098-1102 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Sato: "Strong Correlation Between Interface Microstructure and Barrier Height in n-InP Schottky Contacts Formed by In Situ Electrochemical Process"Japanese Journal of Applied Physics. 38. 1103-1106 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.B.Takeyama: "Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP"Japanese Journal of Applied Physics. 38. 1115-1118 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Takahashi: "X-ray Photoelectron Spectroscopy and Ultrahigh Vacuum Contactless Capacitance-Voltage Characterization of Novel Oxide-Free InP Passivation Process Using a Silicon Surface Quantum Well"Japanese Journal of Applied Physics. 38. 1128-1132 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] C.Kaneshiro: "Electrochemical Etching of Indium Phosphide Surfaces Studied by Volammetry and Scanned Probe Microscopes"Japanese Journal of Applied Physics. 38. 1147-1152 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] B.Adamowicz: "Electronic Properties of AlxGa1-xAs Surface Passivated by Ultrathin Silicon Interface Control Layer"Applied Surface Science. 141. 326-332 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Fujikura: "Selective Growth of Quantum Wire-Dot Coupled Structures with Novel High Index Facets for InGaAs Single Electron Transistor Arrays"Microelectronics. 30. 397-401 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Mutoh: "Effects of Initial Surface Reconstruction on Silicon Interface Control Layer Based Passivation of (001) GaAs Surfaces Studied in an Ultrahigh-Vacuum Multichamber System"Japanese Journal of Applied Physics. 38. 2538-2543 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Yoshida: "A Novel Non-Destructive Characterization Method of Electronic Properties of Pre- and Post-Processing Silicon Surfaces Based on Ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements"Japanese Journal of Applied Physics. 38. 2349-2354 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Hasegawa: "Properties of Metal-Semiconductor Interfaces Formed on n-Type GaN"Japanese Journal of Applied Physics. 38. 2634-2639 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Sato: "Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition"Japanese Journal of Applied Physics. 38. 2448-2452 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Nakamura: "Transport Properties of Schottky In-Plane-Gate GaAs Single and Coupled Quantum Wire Transistors"Inst.Phys.Conf.Ser.. 162. 409-414 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N.Ono: "Study of Selective MBE Growth on Patterned (001) InP Substrates Toward Realization of <100>-Oriented InGaAs Ridge Quantum Wires"Inst.Phys.Conf.Ser.. 162. 385-390 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] C.Kaneshiro: "Realization of Strongly Metal-Dependent Schottky Barrier Heights on n GaAs by In Situ Electrochemical Process"Inst.Phys.Conf.Ser.. 162. 585-590 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Muranaka: "Realization of InP-Based InGaAs Single Electron Transistors on Wires and Dots Grown by Selective MBE"Microelectronic Engineering. 47. 201-203 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Okada: "GaAs-Based Single Electron Logic and Memory Devices Using Electro-Deposited Nanometer Schottky Gates"Microelectronic Engineering. 47. 285-287 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Sai: "Growth of Device Quality InGaP/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy using Tertiarybutylphosphine"Solid State Electronics. 43. 1541-1546 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Takahashi: "In-situ Characterization Technique of Compound Semiconductor Heterostructure Growth and Device Processing Steps Based on UHV Contactless Capacitance-Voltage Measurement"Solid State Electronics. 43. 1561-1570 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Koyama: "Formation Processes and Properties of Schottky and Ohmic Contacts on n-type GaN form Field Effect Transistor Applications"Solid State Electronics. 43. 1483-1488 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Hamamatsu: "Formation of <001>-Aligned Nano-Scale Pores on (001) n-InP Surfaces by Photoelectrochemical Anodization in HCl"J.Electroanalytical Chem.. 473. 223-229 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Hasegawa: "Molecular Beam Epitaxy and Device Applications of III-V Semiconductor Nanowires"MRS Bulletin. 24. 25-30 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] B.Adamowicz: "Computer Simulation of the Surface Photovoltage on Si and GaAs Surfaces with U-shaped Surface State Continuum"Vacuum. 54. 173-177 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Hasegawa: "Properties of nanometer-sized metal-semiconductor interfaces of GaAs and InP formed by an in situ electrochemical process"Journal of Vacuum Science and Technology B. 17. 1856-1866 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Okada: "Characterization of GaAs Schottky in-plane gate quantum wire transistors for switching of quantized conductance"Physica B. 272. 123-126 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Kasai: "Conductance oscillation characteristics of GaAs Schottky wrap-gate single electron transistors"Physica B. 272. 88-91 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Hasegawa: "Unpinning of Fermi level in nanometer-sized Schottky contacts on GaAs and InP"Applied Surface Science. 166. 92-96 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Takahashi: "In situ UHV contactless C-V and XPS characterization of surface passivation process for InP using a partially nitrided Si interface control layer"Applied Surface Science. 166. 526-531 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Fujikura: "Formation of device-oriented InGaAs coupled quantum structures by selective MBE growth on patterned InP substrates"Physica E. 7. 864-869 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] C.Jiang: "Vertical barrier layer formation during selective MBE growth of InGaAs ridge quantum wires on InP patterned substrates"Physica E. 7. 902-906 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Hasegawa: "Advanced mesoscopic device concepts and technology"Microelectronic Engineering. 53. 29-36 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N.Negoro: "Scanning tunneling microscopy and spectroscopy study of ultrathin Si interface control layers grown on (001) GaAs for surface passivation"Applied Surface Science. 159/160. 292-300 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Anantathanasarn: "Surface passivation of GaAs by ultra-thin cubic GaN layer"Applied Surface Science. 159/160. 456-461 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Shiozawa: "Correlation between interface state properties and electron transport at ultrathin insulator/Si interfaces"Applied Surface Science. 159/160. 98-103 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Hasegawa: "MBE growth and applications of silicon interface control layers"Thin Solid Films. 367. 58-67 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Hasegawa: "Effects of gap states on scanning tunneling spectra observed on (110)- and (001)-oriented clean surfaces and ultrathin Si layer covered surfaces of GaAs prepared by molecular beam epitaxy"Journal of Vacuum Science & Technology B. 18. 2100-2108 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Iyawa: "Chemical and Electrochemical Nanofabrication Processes for Schottky In-Plane Gate GaAs Single and Coupled Quantum Wire Transistors"Jpn.J.Appl.Phys.. 39. 4651-4652 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Fujikura: "Electrochemical Formation of Uniform and Straight Nano-Pore Arrays on (001) InP Surfaces and Their Photoluminescence Characterizations"Jpn.J.Appl.Phys.. 39. 4616-4620 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Yoshida: "Ultrahigh-Vacuum Contactless Capacitance-Voltage Characterization of Hydrogen Terminated-Free Silicon Surfaces"Jpn.J.Appl.Phys.. 39. 4504-4508 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process"Jpn.J.Appl.Phys.. 39. 4609-4615 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Yamada: "Fabrication and Characterization of Novel Oxide-Free InP Metal-Insulator-Semiconductor FETs Having an Ultra Narrow Si Surface Quantum Well"Jpn.J.Appl.Phys.. 39. 2439-2443 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Ootomo: "Nitridation of GaP (100) Surfaces by rf Nitrogen Radicals and by Electron Cyclotron Resonance Nitrogen Plasma"Jpn.J.Appl.Phys.. 39. 2407-2413 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Muranaka: "Selective MBE Growth of InGaAs Quantum Wire-Dot Coupled Structures with Controlled Double-Barrier Potential Profiles"Inst.Phys.Conf.Ser.. 166. 187-190 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Kasai: "GaAs Quantum Wire Transistors and Single Electron Transistors using Schottky Wrap Gates for Quantum Integrated Circuits"Inst.Phys.Conf.Ser.. 166. 219-222 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Muranaka: "Origin of Non-Uniformity in MBE Grown Nanometer-Sized InGaAs Ridge Quantum Wires and Its Removal by Atomic Hydrogen-Assisted Cleaning"Thin Solid Films. 380. 189-191 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] B.Adamowicz: "Analysis of photoluminescence efficiency and surface recombination velocity of MBE-grown AlGaAs layers"Thin Solid Films. 367. 180-183 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] B.Adamowicz: "Computer analysis of photon-induced non-equilibrium phenomena at Si and AlGaAs surfaces"Vacuum. 57. 111-120 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] B.Adamowicz: "COMPUTER ANALYSIS OF THE FERMI LEVEL BEHAVIOR AT SiO_2/n-GaAs INTERFACES"Electron Technology. 33. 249-252 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Yoshida: "Realization of UHV-Compativle Defect-Free Hydorogen Terminated Silicon Surfaces with the Use of UHV Contactless Capacitance-Voltage Method"Applied Surface Science. (in press). (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Kasai: "Conductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown (001) Surfaces of III-V Compound Semiconductors"Applied Surface Science. (in press). (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Sato: "Current Transport and Capacitance-Voltage Characteristics of GaAs and InP Nanometer-Sized Schottky Contacts Formed by in situ Electrochemical Process"Applied Surface Science. (in press). (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Kasai: "GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots"Jpn.J.Appl.Phys.. 40(in press). (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices"Jpn.J.Appl.Phys.. 40(in press). (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Muranaka: "Characterization and Optimization of Atomic Hydrogen Cleaning of InP Surface for Selective MBE growth of InGaAs Quantum Structure Arrays"Jpn.J.Appl.Phys.. 40(in press). (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] F.Ishikawa: "Bulk and Interface Deep Levels in InGaP/GaAs Heterostructures Grown by Tertiarybutyl Phosphine-Based Gas Source Molecular Beam Epitaxy"Japanese Journal of Applied Physics. 40(in press). (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Z.Jin: "In-Situ XPS Study of Etch Chemistry of Methane-Based RIBE of InP Using N_2"Japanese Journal of Applied Physics. 40(in press). (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] C.Jiang: "Ridge Uniformity Improvement of Sub-10nm InGaAs Ridge Quantum Wires by Selective MBE on Patterned InP"Japanese Journal of Applied Physics. 40(in press). (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Okada: "Novel Single Electron Memory Device Using Metal Nano-Dots and Schottky In Plane Gate Quantum Wire"Japanese Journal of Applied Physics. 40(in press). (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 謝永桂: "InP系高速デバイス用多層エピタキシャル構造のSi超薄膜による表面不活性化"電子情報通信学会誌C. (掲載決定). (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Hasegawa: "InP-Based Materials and Devices -Physics and Technology-"Wiley-Interscience, John Wiley & Sons, Inc.. 592 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Satoh, H.Okada, K.Jinushi, H.Fujikura and H.Hasegawa: "Voltage Gain in GaAs-Based Lateral Single Electron Transistors Having Three Schottky Wrap Gates"Japanese Journal of Applied Physics. 38. 415-417 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Sai, H.Fujikura and H.Hasegawa: "Gas Source Molecular Beam Epitaxial Growth of In_<1-x>Ga_xP on GaAs Using Tertiarybutylphosphine"Japanese Journal of Applied Physics. 38. 151-158 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Fujikura, Y.Hanada, T.Muranaka and H.Hasegawa: "Control of Dot Size and Tunneling Barrier Profile in In_<0.53>Ga_<0.47>As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates"Jananese Journal of Applied Physics. 38. 421-424 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Sai, H.Fujikura and H.Hasegawa: "Study of Reflection High-Energy Electron Diffraction Oscillation for Optimization fo tertiarybutylposphine-Based Molectular Beam Epitaxial Growth of In_<0.48>Ga_<0.52>P on GaAs"Japanese Journal of Applied Physics. 38. 421-424 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Sai, H.Fujikura and H.Hasegawa: "Study of Reflection High-Energy Electron Diffraction Oscillation for Optimization of tTrtiarybutylposphine-Based Molectular Beam Epitaxial Growth of In_<0.48>Ga_<0.52>P on GaAs"Japanese Journal of Applied Physics. 38. 841-831 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Muranaka, H.Okada, H.Fujikura and H.Hasegawa: "Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates"Japanese Journal of Applied Physics. 38. 1071-1074 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Hasegawa: "Fermi Level Pinning and Schottky Barrier Height Control at Metal Semiconductor Interfaces of InP and Related Materials"Japanese Journal of Applied Physics. 38. 1098-1102 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Sato, C.Kaneshiro and H.Hasegawa: "Strong Correlation Between Interface Microstructure and Barrier Height in n-InP Schottky Contacts Formed by In Situ Electrochemical Process"Japanese Journal of Applied Physics. 38. 1103-1106 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.B.Takeyama, A.Noya, Hashizume, T and H.Hasegawa: "Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP"Japanese Journal of Applied Physics. 38. 1115-1118 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Takahashi, T.Hashizume and H.Hasegawa: "X-ray Photoelectron Spectroscopy and Ultrahigh Vacuum Contactless Capacitance-Voltage Characterization of Novel Oxide-Free InP Passivation Process Using a Silicon Surface Quantum Well"Japanese Journal of Applied Physics. 38. 1128-1132 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] C.Kaneshiro, T.Sato and H.Hasegawa: "Electrochemical Etching of Indium Phosphide Surfaces Studied by Volammetry and Scanned Probe Microscopes"Japanese Journal of Applied Physics. 38. 1147-1152 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] B.Adamowicz, M.Miczek, K.Ikeya, M.Mutoh, T.Saitoh, H.Fujikura and H.Hasegawa: "Electronic Properties of Al_xGa_<1-x>As Surface Passivated by Ultrathin Silicon Interface Control Layer"Applied Surface Science. 141. 326-332 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Fujikura, T.Muranaka and H.Hasegawa: "Selective Growth of Quantum Wire-Dot Coupled Structures with Novel High Index Facets for InGaAs Single Electron Transistor Arrays"Microelectronics. 30. 397-401 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Mutoh, T.Tsurumi and H.Hasegawa: "Effects of Initial Surface Reconstruction on Silicon Interface Control Layer Based Passivation of(001)GaAs Surfaces Studied in an Ultrahigh-Vacuum Multichamber System"Japanese Journal of Applied Physics. 38. 2538-2543 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Yoshida, H.Hasegawa and T.Sakai: "A Novel Non-Destructive Characterization Method of Electronic Properties of Pre-and Post-Processing Silicon Surfaces Based on Ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements"Japanese Journal of Applied Physics. 38. 2349-2354 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Hasegawa, Y.Koyama and T.Hashizume: "Properties of Metal-Semiconductor Interfaces Formed on n-Type GaN"Japanese Journal of Applied Physics. 38. 2634-2639 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Sato, C.Kaneshiro, H.Okada and H.Hasegawa: "Formation of Size-and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition"Japanese Journal of Applied Physics. 38. 2448-2452 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Nakamura, T.Kudoh, H.Okada and H.Hasegawa: "Transport Properties of Schottky In-Plane-Gate GaAs Single and Coupled Quantum Wire Transistors"Inst.Phys.Conf.Ser.. 162. 409-414 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Ono, H.Fujikura and H.Hasegawa: "Study of Selective MBE Growth on Patterned(001)InP Substrates Toward Realization of<100>-Oriented InGaAs Ridge Quantum Wires"Inst.Phys.Conf.Ser.. 162. 385-390 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] C.Kaneshiro, T.Sato and H.Hasegawa: "Realization of Strongly Metal-Dependent Schottky Barrier Heights on n GaAs by In Situ Electrochemical Process"Inst.Phys.Conf.Ser.. 162. 585-590 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Muranaka, H.Okada, H.Fujikura and H.Hasegawa: "Realization of InP-Based InGaAs Single Electron Transistors on Wires and Dots Grown by Selective MBE"Microelectronic Engineering. 47. 201-203 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Okada, T.Sato, K.Jinushi and H.Hasegawa: "GaAs-Based Single Electron Logic and Memory Devices Using Electro-Deposited Nanometer Schottky Gates"Microelectronic Engineering. 47. 285-287 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Sai, H.Fujikura, A.Hirama and H.Hasegawa: "Growth of Device Quality InGaP/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy using Tertiarybutylphosphine"Solid State Electronics. 43. 1541-1546 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Takahashi, T.Yoshida, M.Mutoh, T.Sakai and H.Hasegawa: "In-situ Characterization Technique of Compound Semiconductor Heterostructure Growth and Device Processing Steps Based on UHV Contactless Capacitance-Voltage Measurement"Solid State Electronics. 43. 1561-1570 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Koyama, T.Hashizume and H.Hasegawa: "Formation Processes and Properties of Schottky and Ohmic Contacts on n-type GaN form Field Effect Transistor Applications"Solid State Electronics. 43. 1483-1488 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Hamamatsu, C.Kaneshiro, H.Fujikura and H.Hasegawa: "Formation of<001>-Aligned Nano-Scale Pores on(001)n-InP Surfaces by Photoelectrochemical Anodization in HCl"J.Electroanalytical Chem.. 473. 223-229 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Hasegawa, H.Fujikura and H.Okada: "Molecular Beam Epitaxy and Device Applications of III-V Semiconductor Nanowires"MRS Bulletin. 24. 25-30 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] B.Adamowicz and H.Hasegawa: "Computer Simulation of the Surface Photovoltage on Si and GaAs Surfaces with U-shaped Surface State Continuum"Vacuum. 54. 173-177 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Hasegawa, T.Sato and C.Kaneshiro: "Properties of nanometer-sized metal-semiconductor interfaces of GaAs and InP formed by an in situ electrochemical process"Journal of Vacuum Science and Technology B. 17. 1856-1866 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Okada and H.Hasegawa: "Characterization of GaAs Schottky in-plane gate quantum wire transistors for switching of quantized conductance"Physica B. 272. 123-126 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Kasai, Y.Satoh and H.Hasegawa: "Conductance oscillation characteristics of GaAs Schottky wrap-gate single electron transistors"Physica B. 272. 88-91 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Hasegawa, T.Sato and S.Kasai: "Unpinning of Fermi level in nanometer-sized Schottky contacts on GaAs and InP"Applied Surface Science. 166. 92-96 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Takahashi and H.Hasegawa: "In situ UHV contactless C-V and XPS characterization of surface passivation process for InP using a partially nitrided Si interface control layer"Applied Surface Science. 166. 526-531 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Fujikura, T.Muranaka and H.Hasegawa: "Formation of device-oriented InGaAs coupled quantum structures by selective MBE growth on patterned InP substrates"Physica E. 7. 864-869 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] C.Jiang, H.Fujikura and H.Hasegawa: "Vertical barrier layer formation during selective MBE growth of InGaAs ridge quantum wires on InP patterned substrates"Physica E. 7. 902-906 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Hasegawa: "Advanced mesoscopic device concepts and technology"Microelectronic Engineering. 53. 29-36 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Negoro, H.Fujikura and H.Hasegawa: "Scanning tunneling microscopy and spectroscopy study of ultrathin Si interface control layers grown on(001)GaAs for surface passivation"Applice Surface Science. 159/160. 292-300 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Anantathanasarn, S.Ootomo, T.Hashizume and H.Hasegawa: "Surface passivation of GaAs by ultra-thin cubic GaN layer"Applied Surface Science. 159/160. 456-461 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Shiozawa, T.Yoshida, T.Hashizume and H.Hasegawa: "Correlation between interface state properties and electron transport at ultrathin insulator/Si interfaces"Applied Surface Science. 159/160. 98-103 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Hasegawa: "MBE growth and applications of silicon interface control layers"Thin Solid Films. 367. 58-67 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Hasegawa, N.Negoro, S.Kasai, Y.Ishikawa and H.Fujikura: "Effects of gap states on scanning tunneling spectra observed on(110)-and(001)-oriented clean surfaces and ultrathin Si layer covered surfaces of GaAs prepared by molecular beam epitaxy"Journal of Vacuum Science & Technology B. 18. 2100-2108 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Iyawa, S.Kasai, Okada, J.Nakamura and H.Hasegawa: "Chemical and Electrochemical Nanofabrication Processes for Schottky In-Plane Gate GaAs Single and Coupled Quantum Wire Transistors"Jpn.J.Appl.Phys.. 39. 4651-4652 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Fujikura, A.Liu, A.Hamamatsu, T.Sato and H.Hasegawa: "Electrochemical Formation of Uniform and Straight Nano-Pore Arrays on(001)InP Surfaces and Their Photoluminescence Characterizations"Jpn.J.Appl.Phys.. 39. 4616-4620 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Yoshida and H.Hasegawa: "Ultrahigh-Vacuum Contactless Capacitance-Voltage Characterization of Hydrogen Terminated-Free Silicon Surfaces"Jpn.J.Appl.Phys.. 39. 4504-4508 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Sato, S.Kasai, Okada and H.Hasegawa: "Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process"Jpn.J.Appl.Phys.. 39. 4609-4615 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Yamada, H.Takahashi, T.Hashizume and H.Hasegawa: "Fabrication and Characterization of Novel Oxide-Free InP Metal-Insulator-Semiconductor FETs Having an Ultra Narrow Si Surface Quantum Well"Jpn.J.Appl.Phys.. 39. 2439-2443 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Ootomo, T.Hashizume and H.Hasegawa: "Nitridation of GaP(100)Surfaces by rf Nitrogen Radicals and by Electron Cyclotron Resonance Nitrogen Plasma"Jpn.J.Appl.Phys.. 39. 2407-2413 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Muranaka H.Fujikura and H.Hasegawa: "Selective MBE Growth of InGaAs Quantum Wire-Dot Coupled Structures with Controlled Double-Barrier Potential Profiles"Inst.Phys.Conf.Ser.. 166. 187-190 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Kasai, Y.Satoh and H.Hasegawa: "GaAs Quantum Wire Transistors and Single Electron Transistors using Schottky Wrap Gates for Quantum Integrated Circuits"Inst.Phys.Conf.Ser.. 166. 219-222 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Muranaka, C.Jiang, A.Ito and H.Hasegawa: "Origing of Non-Uniformity in MBE Grown Nanometer-Sized InGaAs Ridge Quantum Wires and Its Removal by Atomic Hydrogen-Assisted Cleaning"Thin Solid Films. 380. 189-191 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] B.Adamowicz and H.Hasegawa: "Analysis of photoluminescence efficiency and surface recombination velocity of MBE-grown AlGaAs layers"Thin Solid Films. 367. 180-183 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] B.Admowicz and H.Hasegawa: "Computer analysis of Photon-induced non-equilibrium phenomena at Si and AlGaAs surfaces"Vacuum. 57. 111-120 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] B.Adamowicz, M.Miczek and H.Hasegawa: "COMPUTER ANALYSIS OF THE FERMI LEVEL BEHAVIOR AT SiO_2/n-GaAs INTERFACES"Electron Technology. 33. 249-252 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Kasai and H.Hasegawa: "GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots"Japanese Journal of Applied Physics. 40(in press). (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Sato, S.Kasai and H.Hasegawa: "Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices"Japanese Journal of Applied Physics. 40(in press). (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Muranaka, C.Jiang, A.Ito, and H.Hasegawa: "Characterization and Optimization of Atomic Hydrogen Cleaning of InP Surface for Selective MBE growth of InGaAs Quantum Structure Arrays"Japanese Journal of Applied Physics. 40(in press). (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] F.Ishikawa, a.Hirama and H.Hasegawa: "Bulk and Interface Deep Levels in InGaP/GaAs Heterostructures Grown by Tertiarybutyl Phosphine-Based Gas Source Molecular Beam Epitaxy"Japanese Journal of Applied Physics. 40(in press). (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Z.Jin, H.Takahashi, T.Hashizume and H.Hasegawa: "In-Situ XPS Study of Etch Chemistry of Methane-Based RIBE of InP Using N_2"Japanese Journal of Applied Physics. 40(in press). (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] C.Jiang, T.Muranaka and H.Hasegawa: "Ridge Uniformity Improvement of Sub-10nm InGaAs Redge Quantum Wires by Selective MBE on Patterned InP"Japanese Journal of Applied Physics. 40(in press). (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Okada and H.Hasegawa: "Novel Single Electron Memory Device Using Metal Nano-Dots and Schottky In Plane Gate Quantum Wire"Japanese Journal of Applied Physics. 40(in press). (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Yoshida, H.Hasegawa and T.Sakai: "Realization of UHV-CompativleDefect-Free Hydorogen Terminated Silicon Surfaces with the Use of UHV Contactless Capacitance-Voltage Method"Applies Surface Science. (in press). (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Sato, S.Kasai and H.Hasegawa: "Current Transport and Capacitance-Voltage Characteristics of GaAs and InP Nanometer-Sized Schottky Contacts Formed by in situ Electrochemical Process"Applies Surface Science. (in press). (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Kasai, N.Negoro and H.Hasegawa: "Conductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown(001)Surfaces of III-V Compound Semiconductors"Applies Surface Science. (in press). (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.-G.Xie, K.Takahashi, H.Takahashi, C.Jiang, S.Kasai and H.Hasegawa: "Surface Passivation of Epitaxial Multi-Layer Structures for InP-based High Speed Devices by and Ultrathin Silicon Layer"IEICE-C, in Japanese, (accepted for publication). (2001)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2002-03-26  

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