2001 Fiscal Year Final Research Report Summary
Epitaxial Growth of Diamond Thin Films on Large-scale Smooth Sapphire Substrate
| Project/Area Number |
11450118
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
YOSHIMOTO Mamoru Tokyo Inst. Tech., Mater.& Struc. Lab., Assoc.Professor, 応用セラミックス研究所, 助教授 (20174998)
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| Co-Investigator(Kenkyū-buntansha) |
KAKIHANA Masato Tokyo Inst. Tech., Mater.& Struc. Lab., Assoc.Professor, 応用セラミックス研究所, 助教授 (50233664)
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| Project Period (FY) |
1999 – 2001
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| Keywords | sapphire substrate / diamond / thin film / ultrasmooth / laser ablation / graphite / epitaxial film / crystal growth |
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| Research Abstract |
We propose a new method for the synthesis of diamond films via a hydrogen-free vapor phase route of pulsed laser ablation of a graphite target in a low-pressure pure oxygen atmosphere. The evidence from microscopic, diffraction and spectroscopic techniques indicates that high-quality diamond crystals can be nucleated and grown epitaxially on sapphire (single-crystal aluminum oxide) substrates without diamond-powder treatment at the temperatures lower than 600℃ under the optimized growth conditions of oxygen pressures and pulsed KrF-excimer laser ablation. The spectroscopic property of a laser plasma plume produced during pulsed laser ablation of graphite in an oxygen gas was examined by using the time-resolved optical emission measurements in order to discuss the vapor phase reaction and film growth mechanism.
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