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2000 Fiscal Year Final Research Report Summary

Reduction of threading dislocations in group III nitride grown by vapor phase epitaxy and in-situ monitoring of the grown-in stress

Research Project

Project/Area Number 11450131
Research Category

Grant-in-Aid for Scientific Research (B).

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionMEIJO UNIVERSITY

Principal Investigator

AMANO Hiroshi  Meijo University, Faculty of Science and Technology, Associate Professor, 理工学部, 助教授 (60202694)

Co-Investigator(Kenkyū-buntansha) AKASAKI Isamu  Meijo University, Faculty of Science and Technology, Professor, 理工学部, 教授 (20144115)
Project Period (FY) 1999 – 2000
KeywordsGroup III nitride semiconductors / Multi quantum well structure / UV laser diode / Bright blue light emitting diode / UV detector / Microwave FET / Two dimensional electron gas
Research Abstract

Although high yield growth technology of group III nitrides on sapphire using low temperature deposited buffer layer which had been established by us in 1986 brought about the bright blue and green light emitting diodes and violet laser diodes, it still has the problem of high density threading dislocations.
In order to reduce threading dislocations in the group III nitride films, we intentionally applied horizontal biaxial stress during growth, thereby bend the threading dislocations. Intentional stress was applied by forming trench structure, by which growth plane was inclined from the c-axis direction. Self induced stress field around dislocations causes inductive force along growth plane, thereby almost all types of dislocations including pure-screw, pure-edge, and mixed type dislocations are bent. This mechanism can be applied not only in case of GaN but also applicable to AlGaN.Low dislocation density AlGaN has been achieved for the first time.
In this study, we also established the in-situ stress monitoring system, by which we can precisely determined the critical thickness for crack formation. We also found the impurity hardening effect in nitrides for the first time.

  • Research Products

    (79 results)

All Other

All Publications (79 results)

  • [Publications] S,Yamaguchi,M.Kariya,S.Nitta,H.Amano,I.Akasaki: "Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by metalorganic vapor phase epitaxy"Applied Physics Letters. 75. 4106-4108 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] C.Wetzel,T.Takeuchi,H.Amano,I.Akasaki: "Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectric Ga_<1-x>In_xN/GaN quantum well structures"Physical Review B. 61. 2159-2163 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Kariya,S.Nitta,S.Yamaguchi,H.Amano,I.Akasaki: "Mosaic structure of ternary Al_<1-x>In_xN films on GaN grown by metalorganic vapor phase epitaxy"Japanese Journal of Applied Physics. 38. L984-L986 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] D.M.Hofmann,B.K.Meyer,F.Leiter,W.v.Foerster,H.Alves,N.Romanov,H.Amano,I.Akasaki: "Optical transitions of the Mg acceptor in GaN"Japanese Journal of Applied Physics. 38. L1422-L1424 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Kashima,R.Nakamura,M.Iwaya,H.Katoh,S.Yamaguchi,H.Amano.I.Akasaki: "Microscopic investigation of Al_<0.43>Ga_<0.57>N on sapphire"Japanese Journal of Applied Physics. 38. L1515-L1518 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Kariya,S.Nitta,M.Kosaki,Y.Yukawa,S.Yamaguchi,H.Amano,I.Akasaki: "Effect on GaN/Al_<0.17>Ga_<0.83>N and Al_<0.05>Ga_<0.95>N/Al_<0.17>Ga_<0.83>N quantum wells by isoelectronic In-doping during metalorganic vapor phase epitaxy"Japanese Journal of Applied Physics. 39. L143-L145 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Kamiyama,M.Iwaya,H.Amano,I.Akasaki: "Performance of GaN-based semiconductor laser with spectral broadening due to"Japanese Journal of Applied Physics. 39. 390-392 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Takeuchi,H.Amano,I.Akasaki: "Theoretical study of orientation dependence of piezoelecric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells"Japanese Journal of Applied Physics. 39. 413-416 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Yamaguchi,M.Kariya,S.Nitta,H.Amano and I.Akasaki: "The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy"Jpn.J.Appl.Phys.. 39. 2385-2388 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] C.Wetzel,H.Amano and I.Akasaki: "Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design"Jpn.J.Appl.Phys.. 39. 2425-2427 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] C.Pernot,A.Hirano,M.Iwaya,T.Detchprohm,H.Amano and I.Akasaki: "Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes"Jpn.J.Appl.Phys.. 39. L387-389 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Iwaya,S.Terao,N.Hayashi,T.Kashima,T.Detchprohm,H.Amano,I.Akasaki,A.Hirano and C.Pernot: "High-Quality AlxGa1-xN Using Low Temperature-Interlayer and its Application to UV Detector"MRS Internet J. Nitride Semicond. Res.. 5S1. W1.10 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Nitta,T.Kashima,M.Kariya,Y.Yukawa,S.Yamaguchi,H.Amano and I.Akasaki: "Mass Transport, Faceting and Behavior of Dislocations in GaN"MRS Internet J.Nitride Semicond.Res.. 5S1. W2.8 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Benamara,L.Weber,J.H.Mazur,W.Swider,J.Washburn,M.Iwaya,I.Akasald and H.Amano: "The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN"MRS Intrnet J.Nitride Semicond.Res.. 5S1. W5.8 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] I.Akasaki,S.Kamiyama,T.Detchprohm,T.Takeuchi and H.Amano: "Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser Diodes"MRS Internet J.Nitride Semicond.Res.. 5S1. W6.8 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] C.Wetzel,T.Takeuchi,H.Amano and I.Akasaki: "Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures"MRS Internet J.Nitride Semicond.Res.. 5S1. W12.4 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Tabuchi,Y.Takeda,T.Takeuchi,H.Amano,I.Akasaki: "Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method"Surface Science Society of Japan. 21. 38-44 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] P.N.Hai,W.M.I.Chen,A Buyanova,B.Monemar,H.Amano,I.Akasaki: "Ga-related defect in as-grown Zn-doped GaN : An optically detected magnetic-resonance study"Physical Review-Series B-. 62. R10607-10609 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] G.Pozina,J.P.Bergman,B.Monemar,T.Takeuchi,H.Amano,I.Akasaki: "Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells"Journal of Applied Physics. 88. 2677-2681 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] G.Pozina,J.P.Bergman,B.Monemar,T.Takeuchi,H.Amano,I.Akasaki: "Multiple Peak Spectra from InGaN/GaN Multiple Quantum Wells"Physica Status Solidi A Applied Research. 180. 85-90 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Iwaya,S.Terao,N.Hayashi,T.Kashima,H.Amano,I.Akasaki: "Realization of crack-free and high-quality thick AlxGa1-xN for UV optoelectronics using low-temperature interlayer"Applied Surface Science. 159/160. 405-413 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Yamaguchi,M.Kariya,S.Nitta,H.Amano,I.Akasaki: "Strain relief by In-doping and its effect on the surface and on the interface structures in (Al) GaN on sapphire grown by metalorganic vapor-phase epitaxy"Applied Surface Science. 159/160. 414-420 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Nitta,M.Kariya,T.Kashima,S.Yamaguchi,H.Amano,I.Akasaki: "Mass transport and the reduction of threading dislocation in GaN"Applied Surface Science. 159/160. 421-426 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Tabuchi,K.Hirayama,Y.Takeda,T.Takeuchi,H.Amano,I.Akasaki: "Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method"Applied Surface Science. 159/160. 432-440 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Sato,M.Iwaya,K.Isomura,T.Ukai,S.Kamiyama,H.Amano,I.Akasaki: "Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes"IEICE TRANSACTIONS ON ELECTRONICS E SERIES C. 83. 573-578 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J..P.Bergman,B,Monemar,G.Pozina,B.E.Sernelius,P.O.B.E.Holtz,H.Amano,I.Akasaki: "Radiative Recombination in InGaN/GaN Multiple Quantum Wells"Materials Science Forum. 338/342. 1571-1574 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] G.Pozina,J.P.Bergman,B.Monemar,S Yamaguchi H.Amano,I.Akasaki: "Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant"Applied Physics Leters. 76. 3388-3390 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N.Hayashi,S.Kamiyama,T.Takeuchi,M.Iwaya,H.Amano,I.Akasaki,S.Watanabe,Y.Kaneko and N.Yamada,: "Electrical conductivity of low temperature deposited A10.1Ga0.9N interlayer"Jpn.J.Appl.Phys. 39. 6493-6495 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Nitta,T.Kashima,R.Nakamura,M.Iwaya,H.Amano and I.Akasaki,: "Mass Transport of GaN and Reduction of Threading Dislocations"SURFACE REVIEW AND LETTERS. 7. 561-564 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] G.Pozina,J.P.Bergman,and B.Monemar,M.Iwaya,S.Nitta,H.Amano,and I.Akasaki: "InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport"Appl.Phys.Lett.. 77. 1638-1640 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] C.Wetzel,T.Takeuchi,H.Amano,I.Akasaki: "Quantized states in Ga〜1〜-〜xIn〜xN/GaN heterostructures and the model of polarized homogeneous quantum wells"PHYSICAL REVIEW-SERIES B-. 62. R13302-R13305 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Tabuchi,Y.Takeda,T.Takeuchi,H.Amano,I.Akasaki: "Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method"JOURNAL-SURFACE SCIENCE SOCIETY OF JAPAN. 21. 38-44 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Amano,I.Akasaki: "Effect of Low-temperature Deposited Layer on the Growth of Group-III Nitrides on Sapphire"JOURNAL-SURFACE SCIENCE SOCIETY OF JAPAN. 21. 2-9 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] P.N.Hai,W.M.Chen,I.A.Buyanova,B.Monemar,H.Amano,I.Akasaki: "Ga-related defect in as-grown Zn-doped GaN : An optically detected magnetic-resonance study"PHYSICAL REVIEW-SERIES B-. 62. R10607-R10609 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Nitta,T.Kashima,R.Nakamura,M.Iwaya,H.Amano,I.Akasaki: "Mass Transport of GaN and Reduction of Threading Dislocations"SURFACE REVIEW AND LETTERS. 7. 561-564 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Yamaguchi,M.Kariya,S.Nitta,T.Kashima,M.Kosaki,Y.Yukawa,H.Amano,I.Akasaki: "Control of crystalline quality of MOVPB-grown GaN and (Al, Ga) N/AlGaN MQW using In-doping and/or N2 carrier gas"JOURNAL OF CRYSTAL GROWTH. 221. 327-331 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Wagner,I.A.Buyanova,N.Q.Thinh,W.M.Chen,B.Monemar,J.L.Lindstrom,H.Amano,I.Akasaki: "Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN"PHYSICAL REVIEW-SERIES B-. 62. 16572-16577 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N.A.Shapiro,Y.Kim,H.Feick,E.R.Weber,P.Perlin,J.W.Yang,I.Akasaki,H.Amano: "Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain"PHYSICAL REVIEW-SERIES B-. 62. R16318-R16321 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] C.Wetzel,M.Kasumi,H.Amano,I.Akasaki: "Absorption Spectroscopy and Band Structure in Polarized GaN/Al〜xGa〜1〜-〜xN Quantum Wells"PHYSICA STATUS SOLIDI A APPLIED RESEARCH. 183. 51-60 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 天野浩単著 または天野浩,赤崎勇 共著: "第3章III族窒化物半導体の光学的・電気的特性pp.43-61、第8章有機金属化合物気相成長(MOVPE)pp.147-164、第15章受光デバイスpp.275-283、第16章電子デバイスpp.285-293。"III族窒化物半導体、赤崎勇編著 培風館、アドバンストエレクトロニクスシリーズI-21. 313 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Yamaguchi, M.Kariya, S.Nitta, H.Amano, I.Akasaki: "Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by metalorganic vapor phase epitaxy"Applied Physics Letters. 75. 4106-4108 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] C.Wetzel, T.Takeuchi, H.Amano, I.Akasaki: "Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectric Ga_<1-x>In_xN/GaN quantum well structures"Physical Review B. 61. 2163 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Kariya, S.Nitta, S.Yamaguchi, H.Amano, I.Akasaki: "Mosaic structure of ternary Al_<1-x>In_xN films on GaN grown by metalorganic vapor phase epitaxy"Japanese Journal of Applied Physics. 38. L986 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] D.M.Hofmann, B.K.Meyer, F.Leiter, W.v.Foerster, H.Alves, N.Romanov, H.Amano, I.Akasaki: "Optical transitions of the Mg acceptor in GaN"Japanese Journal of Applied Physics. 38. L1424 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Kashima, R.Nakamura, M.Iwaya, H.Katoh, S.Yamaguchi, H.Amano, I.Akasaki: "Microscopic investigation of Al_<0.43>Ga_<0.57>N on sapphire"Japanese Journal of Applied Physics. 38. L1518 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Kariya, S.Nitta, M.Kosaki, Y.Yukawa, S.Yamaguchi, H.Amano, I.Akasaki: "Effect on GaN/Al_<0.17>Ga_<0.83>N and Al_<0.05>Ga_<0.95>N/Al_<0.17>Ga_<0.83>N quantum wells by isoelectronic In-doping during metalorganic vapor phase epitaxy"Japanese Journal of Applied Physics. 39. L145 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Kamiyama, M.Iwaya, H.Amano, I.Akasaki: "Performance of GaN-based semiconductor laser with spectral broadening due to"Japanese Journal of Applied Physics. 39. 390-392 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Takeuchi, H.Amano, I.Akasaki: "Theoretical study of orientation dependence of piezoelecric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells"Japanese Journal of Applied Physics. 39. 413-416 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Yamaguchi, M.Kariya, S.Nitta, H.Amano and I.Akasaki: "The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy"Jpn.J.Appl.Phys.. 39. 2385-2388 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] C.Wetzel, H.Amano and I.Akasaki: "Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design"Jpn.J.Appl.Phys.. 39. 2425-2427 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] C.Pernot, A.Hirano, M.Iwaya, T.Detchprohm, H.Amano and I.Akasaki: "Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes"Jpn.J.Appl.Phys.. 39. L387-L389 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Iwaya, S.Terao, N.Hayashi, T.Kashima, T.Detchprohm, H.Amano, I.Akasaki, A.Hirano and C.Pernot: "High-Quality AlxGa1-xN Using Low Temperature-Interlayer and its Application to UV Detector"MRS Internet J.Nitride Semicond.Res.. 5S1. W1.10 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Nitta, T.Kashima, M.Kariya, Y.Yukawa, S.Yamaguchi, H.Amano and I.Akasaki: "Mass Transport, Faceting and Behavior of Dislocations in GaN"MRS Internet J.Nitride Semicond.Res.. 5S1. W2.8 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Benamara, L.Weber, J.H.Mazur, W.Swider, J.Washburn, M.Iwaya, I.Akasaki and H.Amano: "The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN"MRS Internet J.Nitride Semicond.Res.. 5S1. W5.8 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] I.Akasaki, S.Kamiyama, T.Detchprohm, T.Takeuchi and H.Amano: "Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser Diodes"MRS Internet J.Nitride Semicond.Res.. 5S1. W6.8 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] C.Wetzel, T.Takeuchi, H.Amano and I.Akasaki: "Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures"MRS Internet J.Nitride Semicond.Res.. 5S1. W12.4 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Tabuchi, Y.Takeda, T.Takeuchi, H.Amano, I.Akasaki: "Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method"Surface Science Society of Japan. 21. 38-44 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] P.N.Hai, W.M.I.Chen, A Buyanova, B.Monemar, H.Amano, I.Akasaki: "Ga-related defect in as-grown Zn-doped GaN : An optically detected magnetic-resonance study"Physical Review -Series B-. 62. R10607-10609 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] G.Pozina, J.P.Bergman, B.Monemar, T.Takeuchi, H.Amano, I.Akasaki: "Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells"Journal of Applied Physics. 88. 2677-2681 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] G.Pozina, J.P.Bergman, B.Monemar, T.Takeuchi, H.Amano, I.Akasaki: "Multiple Peak Spectra from InGaN/GaN Multiple Quantum Wells"Physica Status Solidi A Applied Research. 180. 85-90 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Iwaya, S.Terao, N.Hayashi, T.Kashima, H.Amano, I.Akasaki: "Realization of crack-free and high-quality thick AlxGa1-xN for UV optoelectronics using low-temperature interlayer"Applied Surface Science. 159/160. 405-413 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Yamaguchi, M.Kariya, S.Nitta, H.Amano, I.Akasaki: "Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy"Applied Surface Science. 159/160. 414-420 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Nitta, M.Kariya, T.Kashima, S.Yamaguchi, H.Amano, I.Akasaki: "Mass transport and the reduction of threading dislocation in GaN"Applied Surface Science. 159/160. 421-426 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Tabuchi, K.Hirayama, Y.Takeda, T.Takeuchi, H.Amano, I.Akasaki: "Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method"Applied Surface Science. 159/160. 432-440 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Sato, M.Iwaya, K.Isomura, T.Ukai, S.Kamiyama, H.Amano, I.Akasaki: "Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes"IEICE TRANSACTIONS ON ELECTRONICS E SERIES C. 83. 573-578 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J..P.Bergman, B.Monemar, G.Pozina, B.E.Sernelius, P.O.B.E.Holtz, H.Amano, I.Akasaki: "Radiative Recombination in InGaN/GaN Multiple Quantum Wells"Materials Science Forum. 338/342. 1571-1574 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] G.Pozina, J.P.Bergman, B.Monemar, S.Yamaguchi, H.Amano, I.Akasaki: "Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant"Applied Physics Letters. 76. 3388-3390 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Hayashi, S.Kamiyama, T.Takeuchi, M.Iwaya, H.Amano, I.Akasaki, S.Watanabe, Y.Kaneko and N.Yamada: "Electrical conductivity of low temperature deposited Al0.1Ga0.9N interlayer"Jpn.J.Appl.Phys. 39. 6493-6495 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Nitta, T.Kashima, R.Nakamura, M.Iwaya, H.Amano and I.Akasaki: "Mass Transport of GaN and Reduction of Threading Dislocations"SURFACE REVIEW AND LETTERS. 7. 561-564 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] G.Pozina, J.P.Bergman, and B.Monemar, M.Iwaya, S.Nitta, H.Amano, and I.Akasaki: "InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport"Appl.Phys.Lett.. 77. 1638-1640 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] C.Wetzel, T.Takeuchi, H.Amano, I.Akasaki: "Quantized states in Ga-1-xIn -xN/GaN heterostructures and the model of polarized homogeneous quantum wells"PHYSICAL REVIEW -SERIES B-. 62. R13 302-R13 305 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Tabuchi, Y.Takeda, T.Takeuchi, H.Amano, I.Akasaki: "Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method"JOURNAL-SURFACE SCIENCE SOCIETY OF JAPAN. 21. 38-44 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Amano, I.Akasaki: "Effect of Low-temperature Deposited Layer on the Growth of Group-III Nitrides on Sapphire"JOURNAL-SURFACE SCIENCE SOCIETY OF JAPAN. 21. 2-9 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] P.N.Hai, W.M.Chen, I.A.Buyanova, B.Monemar, H.Amano, I.Akasaki: "Ga-related defect in as-grown Zn-doped GaN : An optically detected magnetic-resonance study"PHYSICAL REVIEW -SERIES B-. 62. R10607-R10609 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Nitta, T.Kashima, R.Nakamura, M.Iwaya, H.Amano, I.Akasaki: "Mass Transport of GaN and Reduction of Threading Dislocations"SURFACE REVIEW AND LETTERS. 7. 561-564 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Yamaguchi, M.Kariya, S.Nitta, T.Kashima, M.Kosaki, Y.Yukawa, H.Amano, I.Akasaki: "Control of crystalline quality of MOVPE-grown GaN and (Al, Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas"JOURNAL OF CRYSTAL GROWTH. 221. 327-331 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Wagner, I.A.Buyanova, N.Q.Thinh, W.M.Chen, B.Monemar, J.L.Lindstrom, H.Amano, I.Akasaki: "Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN"PHYSICAL REVIEW -SERIES B-. 62. 16572-16577 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.A.Shapiro, Y.Kim, H.Feick, E.R.Weber, P.Perlin, J.W.Yang, I.Akasaki, H.Amano: "Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain"PHYSICAL REVIEW -SERIES B-. 62. R16318-R16321 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] C.Wetzel, M.Kasumi, H.Amano, I.Akasaki: "Absorption Spectroscopy and Band Structure in Polarized GaN/Al-xGa-1-xN Quantum Wells"PHYSICA STATUS SOLIDI A APPLIED RESEARCH. 183. 51-60 (2001)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2002-03-26  

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