2001 Fiscal Year Final Research Report Summary
Reaction mechanism of catalytic decomposition of silane on the hot filament
| Project/Area Number |
11450297
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
反応・分離工学
|
|---|
| Research Institution | The University of Tokyo |
|---|
Principal Investigator |
KOSHI Mitsuo Graduate School of Engineering, The University of Tokyo, Professor, 大学院・工学系研究科, 教授 (20133085)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
TONOKURA Kenich Graduate School of Engineering, The University of Tokyo, Research Associate, 大学院・工学系研究科, 助手 (00260034)
MIYOSHI Akira Graduate School of Engineering, The University of Tokyo, Associate Professor, 大学院・工学系研究科, 助教授 (60229903)
|
|---|
| Project Period (FY) |
1999 – 2001
|
| Keywords | silane / hot filament / reaction mechanism / CVD / surface reaction / amorphous / crystalline silicon |
|---|
| Research Abstract |
Resonance enhanced multiphoton ionization spectroscopy coupled with molecular beam technique has been used to measure H and Si atoms produced by the hot-wire induced decomposition of silane. The catalytic decomposition of silane on the hot filament exhibited different temperature distributions between H and Si atoms. A chemical kinetic model starting with Si+SiH_4 and H+SiH_4 reactions was proposed to explain chemical kinetic phenomena occurring in the silicon hot-wire chemical vapor deposition. The modeling results suggest that temperature sensitivity of film growth properties is primarily due to the gas composition near the surface.
|
Research Products
(10 results)
