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2001 Fiscal Year Final Research Report Summary

Control of Hydrogen in Si and its Application to Thin Film Transistor

Research Project

Project/Area Number 11555001
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section展開研究
Research Field Applied materials science/Crystal engineering
Research InstitutionUniversity of Tsukuba

Principal Investigator

MURAKAMI Kouichi  University of Tsukuba, Inst. Appl. Phys., Professor, 物理工学系, 教授 (10116113)

Co-Investigator(Kenkyū-buntansha) SUZUKI Kenkichi  Hitachi, Ltd., Display Group, Guest Researcher, ディスプレイグループ, 嘱託研究員
KITAJIMA Masahiro  National Inst.for Materials Science, Group header, グループリーダー
MAKIMURA Tetsuya  University of Tsukuba, Inst. Appl. Phys., Lecturer, 物理工学系, 講師 (80261783)
Project Period (FY) 1999 – 2001
KeywordsSilicon / Amorphous Si / Poly-silicon / Hydrogen Passivation / Hydrogen Molecule / Raman Scattering / Multivacancies / Si-H-B Complexes
Research Abstract

We have investigated hydrogen states in silicon and have developed a control method of hydrogen in Si for making the quality of Si films for various devices such as thin film transistors on glass much better. One of the most important results obtained in this study is that B acceptor is more easily passivated by hydrogen atom than P donors in crystalline Si. This was demonstrated by the experimental results that several B-related Si-H bonding centers were observed for me first time by Raman scattering measurements after hydrogen atom treatment, but no P-related Si-H bonds were detected. Secondly, we found that some kinds of multivacancies are stable up to 600 ℃ by measuring Raman scattering of hydrogen molecules and Si-H in hydrogenated Si after thermal annealing of ion implanted samples. According to theoretical calculations, the candidates of the multivacancies are 6 or 10 vacancies. We have also investigated the correlation between H amount measured by SIMS and S-H bonding centers done by Raman scattering method for amorphous Si including various levels of high density of hydrogen. It is found that Raman scattering measurement can be a simple method for estimating approximately the amount of incorporated hydrogen. However, it was impossible to detect Si-H after polycrystallization attained by excimer laser annealing, probably due to surface roughness produced by laser annealing of amorphous Si on glass.

  • Research Products

    (17 results)

All Other

All Publications (17 results)

  • [Publications] M.Kitajima他: "Three Different Forms of Hydrogen Molecules in Silicon"Jpn. J. Appl. Phys.. 38. L691-L693 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Ishioka他: "Hydrogen Molecules trapped by Multivacancies in silicon"Phys. Rev. B.. 60. 10852-10854 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Murakami他: "A New Type of Hydrogen Molecules in Silicon"Physica B. 273-274. 188-191 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Mori他: "Thermal Behavior of Hydrogen Molecules trapped by Multivacanceis in Silicon"Physica B. 302-303. 239-243 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Ishioka他: "Fermi-level Dependence of Formation of Hydrogen Molecules in Crystalline Silicon"Physica B. 308-310. 163-166 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Mori他: "Multivacancied Trapping Hydrogen Molecules"Physica B. 308-310. 171-173 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Murakami他: "Mesoscopic Materials and Clusters-Their Physical and Chemical Properties-"Laser-Plasma Soft X-ray Absorption Spectroscopy of Laser-ablated Silicon and Graphite Particles. 337-345 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M. Kitajima, K. Ishioka, S. Tateishi, K. Nakanoya, N. Fukata, K. Murakami, S. Fujimura, S. Hishita, M. Komatsu, H, Haneda: "Effects of Crystal Disorder on the Molecular Hydrogen Formation in Silicon"Mater. Sci. and Eng.. B58. 13-16 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Three Different Forms of Hydrogen Molecules in Silicon: "M. Kitajima, K. Ishioka, K. Nakanoya, S. Tateishi, T. Mod, N. Fukato, K.Murakami, S.Hishida"Jpn. J. Appl. Phys.. 38 (Express Letter). L691-693 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Ishioka, M. Kitajima, S. Tateishi, K. Nakanoya, N. Fukata, T. Mori, K. Murakami, S. Hishida: "Hydrogen Molecules trapped by Multivacancies in Silicon"Phys. Rev., B. 60. 10852-10854 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Murakami, K. Ishioka, M. Kitajima, S. Tateishi, K. Nakanoya, T. Mori, S. Hishida: "A New Type of Hyfrogen Molecules in Silicon"Physica B. 273-274. 188-191 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Kitajima, K. Ishioka, K. Murakami, K. Nakanoya, N. Fukata, T. Mori: "Temperature Dependence of the Formation of Hydrogen Molecules in n- and p-type Silicon"Physica B. 273-274. 192-195 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Mori, K. Otsuka, N. Umehara, K. Ishioka, K. Kitajima, S. Hishita, K. Murakami: "Thermal Behavior of Hydrogen Molecules trapped by Multivacancies in Silicon"Proc. International Conference on Shallow Level Centers in Semiconductors Pysica B. 302-303. 239-243 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Ishioka, N. Umehara, T. Mori, K. Ohtsuka, M. Kitajima, S. Hishita, K.Murakami: "Fermi-level dependence of Formation of Hydrogen Molecules in Crystalline Silicon"In Physica B. 308-310. 163-166 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Mori, K. Ohtsuka, N. Umehara, K. Ishioka, M. Kitajima, S. Hishita, K. Murakami: "Multivacancies Trapping Hydrogen Molecules"Physica B. 308-310. 171-173 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Murakami, T. Makimura, T. Mizuta, C. Li, D. Takeuchi: "Synthesis of Silicon Nanoparticles and Impurity Doping by Laser Ablation (Invited Talk & Paper)"SPIE Proc.. vol. 4274 (Jan, 2001, San Jose). 222-231

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Murakami, A. Miyashita, O. Yoda: "Laser-plasma Soft X-ray Absorption Spectroscopy of Laser-ablated Soicon and Graphite Particles"in Mesoscopic Materials and Clusters - Their Physical and Chemical Properties edited by T. Aral et al. (Kodansha-Springer, 1999). 337-345

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      「研究成果報告書概要(欧文)」より

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Published: 2003-09-17  

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