2001 Fiscal Year Final Research Report Summary
Development Research of Appratus for Artificial Lattice Utilizing Sputtering and Ion-Plating Combined Technique
| Project/Area Number |
11555086
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kanazawa University |
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Principal Investigator |
HATA Tomonobu Kanazawa University, Faculty of Engineering, Professor, 工学部, 教授 (50019767)
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| Co-Investigator(Kenkyū-buntansha) |
OKADA Osamu ANELVA Co.Ltd., Head Reseracher, 開発研究所, 所長代理
SASAKI Kimihiro Kanazawa University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (40162359)
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| Project Period (FY) |
1999 – 2001
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| Keywords | Sputtering / Thin Film / Metallic Mode / High-k Material / Limitted Reaction / ZrO2 / MOSFET |
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| Research Abstract |
A new sputtering film deposition method, named Limited Reaction Sputtering Technique, was developed and investigated. Using this technique, ZrO2 dielectric films were synthsized for gate materials of next generation MOSFETs. The Si substrate surface oxidation was suppressed consequently a high specific dielectric constant as high as over 20 was obtained. On conventional sputtering technique using oxide target, oxigen ions and radicals are easily to be generated, thus Si is oxidized significantly. However, this teconique does not genarate them, resulting in clear interface between Si substrate and deposited films.
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