• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to project page

2001 Fiscal Year Final Research Report Summary

Development of New Electronic Emitters using GaN/AIN Super Lattice Structures with Negative Electron Affinity

Research Project

Project/Area Number 11555094
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section展開研究
Research Field 電子デバイス・機器工学
Research InstitutionMie University

Principal Investigator

HIRAMATSU Kazumasa  Mie University Faculty of Engineering Professor, 工学部, 教授 (50165205)

Co-Investigator(Kenkyū-buntansha) TADATOMO Kazuyuki  Mitsubishi Cable Industries, LTD. Photonics Research Laboratory Manager, 情報通信・フォトニクス研究所, 主席研究員
MOTOGAITO Atsushi  Mie University Faculty of Engineering Research Associate, 工学部, 助手 (00303751)
MIYAKE Hideto  Mie University Faculty of Engineering Associate Professor, 工学部, 助教授 (70209881)
Project Period (FY) 1999 – 2001
Keywordsgallium nitride / pyramid structure / selective area growth / metalorganic vapor phase epitaxy / electronic emitter / epitaxial lateral overgrowth / GaN / AIN super lattice / dry etching
Research Abstract

In this study, we found the following results in order to fabricate the electronic emitters with GaN/AIN super lattice structures.
(1) Method of fabricating pyramid structures by selective area growth and growth conditions of becoming sharp structures
Fabrication of GaN sharp pyramid structures was carried out by low-pressure MOVPE method in order to fabricate the pyramid structures with GaN/AIN super lattice structures. It was found that the sharp pyramid structures were realized by the high pressure or low temperature growth to appear { 1 - 101 } facet.
(2) Fabrication of high quality GaN substrate using facet controlled technique
Appling the above results on facet-controlled technique, the fabrication of high quality GaN substrate was carried out. The high quality GaN substrates with low dislocation density (〜10^6 cm^<-2>) were obtained by using facet controlled epitaxial lateral overgrowth.
(3) Fabrication of detailed structures by reactive ion etching
Reactive ion etching is effective method to fabricate detailed structures. The control of the depth of dry etching became easy by measuring emission spectra of plasma during dry etching of GaN
(4) Possibility of GaN/AIN super lattice structure
Epitaxial growth GaN on AIN substrate was carried out to study fabrication of GaN/AIN super lattice structures. High quality GaN epitaxial layer with little crack was obtained on A1N substrate. This result shows the possibility of realizing GaN/AIN super lattice structures.

  • Research Products

    (18 results)

All Other

All Publications (18 results)

  • [Publications] Hideto Miyake et al.: "Effects of reactor pressure on epitaxial lateral overgrowth of GaN via low-pressure metalorganic vapor phase epitaxy"Japanese Journal of Applied Physics. 38 9A/B. L1000-L1002 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kazumasa Hiramatsu et al.: "Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides : effects of reactor pressure in MOVPE growth"Physica Status Solidi(a). 176 No.1. 535-543 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kazumasa Hiramatsu et al.: "Fabrication and characterization of low defect density GaN using facet controlled epitaxial lateral overgrowth (FACELO)"Journal of Crystal Growth. 221 No.1. 316-326 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Hideto Miyake et al.: "Reduction of dislocation density in GaN by facet controlled ELO"Proceedings of International Conference on Nitride Workshop, IPAP Conf. Ser.1. 324-327 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kazumasa Hiramatsu et al.: "Effects of reactor pressure in MOVPE growth and fabrication of GaN dot structure using facet controlled technique"Proc. the fifth symposium on atomic-scale surface and interface dynamics. 101-104 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Yoshiaki Honda et al.: "Transmission electron microscopy investigation of dislocations in GaN layer grown by facet-controlled epitaxial lateral overgrowth"Japanese Journal of Applied Physics. 40 4A. L309-L312 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Harumasa Yoshida et al.: "In situ monitoring of GaN reactive ion etching by optical emission spectroscopy"Japanese Journal of Applied Physics. 40 4A. L313-L315 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Hideto Miyake et al.: "Fabrication and Optical Characterization of Facet-Controlled ELO (FACELO) GaN by LP-MOVPE"Physica Status Solidi(a). 188 No.2. 725-728 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kazumasa Hiramatsu: "Recent developments in selective area growth and epitaxial lateral overgrowth of III-nitrides"Proceedings of 28th International Symposium on Compound Semiconductors. (印刷中).

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Hideto Miyake et al.: "Effects of reactor pressure on epitaxial lateral overgrowth of GaN via low-pressure metalorganic vapor phase epitaxy"Japanese Journal of Applied Physics. 38. L1000-L1002 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kazumasa Hiramatsu et al.: "Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides : effects of reactor pressure in MOVPE growth"Physica Status Solidi. 176. 535-543 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kazumasa Hiramatsu et al.: "Fabrication and characterization of low defect density GaN using facet controlled epitaxial lateral overgrowth (FACELO)"Journal of Cristal Growth. 221. 316-326 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Hideto Miyake et al.: "Reduction of dislocation density in GaN by facet controlled ELO"Proceedings of International Conference on Nitride Workshop, IPAP Conf. Ser. 1. 324-327 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kazumasa Hiramatsu et al.: "Effects of reactor pressure in MOVPE growth and fabrication of GaN dot structure using facet controlled technique"Proc. the fifth symposium on atomic-scale surface and interface dynamics. 101-104 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Yoshiaki Honda et al.: "Transmission electron microscopy investigation of dislocations in GaN layer grown by facet-controlled epitaxial lateral overgrowth"Japanese Journal of Applied Physics. 40. L309-L312 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Harumasa Yoshida et al.: "In situ monitoring of GaN reactive ion etching by optical emission spectroscopy"Japanese Journal of Applied Physics. 40. L313-L315 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Hideto Miyake et al.: "Fabrication and Optical Characterization of Facet-Controlled ELO (FACELO) GaN by LP-MOVPE"Physica Status Solidi (a). 188. 725-728 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kazumasa Hiramatsu: "Recent developments in selective area growth and epitaxial lateral overgrowth of III-nitrides"Proceedings of 28th International Symposium on Compound Semiconductors. (To be published).

    • Description
      「研究成果報告書概要(欧文)」より

URL: 

Published: 2003-09-17  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi