2002 Fiscal Year Final Research Report Summary
Widegap Semiconductor Thin Film Prepared >From Soluble Silicon Nanocluster Substituted with Organic Group
| Project/Area Number |
11559003
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
広領域
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| Research Institution | Tohoku University |
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Principal Investigator |
WATANABE Akira Institute of Multidisciplinary Research for Advanced Materia, Tohoku University, Associate Professor, 多元物質科学研究所, 助教授 (40182901)
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| Co-Investigator(Kenkyū-buntansha) |
HOJO Fusao Hitachi Ltd, Hitachi Research Laboratory, Researcher, 材料第一研究部, 研究員(研究職)
MIWA Takao Hitachi Ltd, Hitachi Research Laboratory, Researcher, 材料第一研究部, 主任研究員(研究職)
FUJITSUKA Mamoru Institute of Scientific and Industrial Research, Osaka University, Associate Professor, 産業科学研究所, 助教授 (40282040)
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| Project Period (FY) |
1999 – 2002
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| Keywords | Organosilicon Nanocluster / Precursor / Silicon Coation / Haser annealing / Widegap semiconductor / Optical and Electrical Properties / Organogermanium nanocluster / Laser annealing |
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| Research Abstract |
Although conventional methods for the formation of silicon thin films are such as chemical vapor deposition (CVD), plasma-enhanced CVD, the deposition rate by the gas-phase reaction of unstable species in a vacuum chamber is limited. If we develop a procedure to form a semiconducting thin film by the liquidphase process using a soluble and stable precursor, it would reduce the processing costs and enhance the efficiency of large-area device fabrication such as solar cell and thin film transistor (TFT) for LCD driver. In this study, we have developed a novel procedure for the formation of a silicon thin film by a liquid-phase process using an organosoluble silicon cluster as a precursor. The organosilicon cluster has a three-dimensional silicon skeleton and the organic substituents around the Si core and the organic groups bring about solubility in common organic solvents. By the heat treatment of a precursor film above 4O0℃ in vacuo, an inorganic film witht an amorphous silicon structure is prepared by the elimination of organic substituents. The film was crystallized by XeCl excimer laser annealing. The structural changes of the precursor film caused by preheating and excimer laser annealing were investigated by Raman spectroscopy. The size of the Si grain depended on the energy density and the number of the laser shot. The optical band gap and the electrical properties can be controlled by the heat treatment temperature and the laser annealing conditions. To modify the properties of the silicon film, the formation of the Si-Ge alloy using an organogermanium nanocluster as a precursor was investigated. The application of the laser-induced pyrolysis to the organogermanium/organosilicon nanocluster layered film provides a novel method to form a Si-Ge alloy.
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