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2000 Fiscal Year Final Research Report Summary

Research of new functional photonic devices using asymmetric type II quantum well structure.

Research Project

Project/Area Number 11650021
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionResearch Institute for Advanced Science and Technology(RIAST), Osaka Prefecture University

Principal Investigator

KAWAMURA Yuichi  RIAST Osaka Prefecture University, Associate Professor, 先端科学研究所, 助教授 (80275289)

Co-Investigator(Kenkyū-buntansha) INOUE Naohisa  RIAST Osaka Prefecture University Professor, 先端科学研究所, 教授 (60275287)
Project Period (FY) 1999 – 2000
Keywordsquantum well structure / molecular beam epitaxy / photonic devices / type II structure / As / Sb system / band off-set / hetero-interface / quantum effect devices
Research Abstract

Electric field control of 2-dimentional excitons in quantum well structures is very attractive from the viewpoint of both physics and application to new functional opto-electronic devices. In conventional type I quantum well structures, the exciton peak shifts toward the longer wavelength with applying an electric field, which is well known as the quantum confined Stark effect(QCSE). This effect was applied for a new type of opto-electronic devices, such as a self-electro-optic effect device(SEED), and a high-efficient multiple quantum well(MQW)optical modulator in optical fiber communication systems. Introduction of asymmetric structure of the quantum well structure will make it possible to get further enhancement of the electric field effect of the excitons, because of a large change of wavefunction overlap of electrons and holes by the applied electric field. In this study, we proposed an In_<0.53>Ga_<0.47>As/GaAs_<0.5>Sb_<0.5>/In_<0.52>Al_<0.48> asymmetric type II MQW structure lat … More tice-matched to InP substrates, which was successfully grown by molecular beam epitaxy(MBE). The InGaAs/GaAsSb/InAlAs asymmetric type II MQW structures were grown on Fe doped(100)InP substrates by solid source MBE.In this experiment, the thickness of the InGaAs layer and the InAlAs layer was fixed to 70Å and GaAsSb layer thickness is varied from 0Å to 70Å. It is known that the MQW layer is completely lattice-matched to InP substrate and a symmetric diffraction pattern was obtained. The sharp satellite peaks indicate small composition fluctuation and structural fluctuation in the grown layer. The samples show n-type with the electron concentration of 2x10^<15> cm^<-3> and the electron mobility of 3700 cm^<-2>/v.s at 300K.They were characterized by photoluminescence(PL) measurements and optical absorption measurements. Photoluminescence and optical absorption measurements were carried out in order to clear the fundamental characteristics of the grown layers. It was found that the emission wavelength changes from 1.4 μm to 2.5 μm with increasing the GaAsSb layer thickness from 0Å to 70Å, and the GaAsSb thickness dependence of the emission energy agrees fairly well with the calculation. In addition, a clear excitonic absorption at 1.5μm was observed at 300K in this new type of MQW structures. Less

  • Research Products

    (11 results)

All Other

All Publications (11 results)

  • [Publications] T.Katayama, Y.Kawamura H.Takasaki, N.Inoue: "InGaAs/GaAsSb typeII quantum well structures lattice-matched to InP"Journal of Crystal Growth. 209. 450-453 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Takasaki, Y.Kawamura T.Katayama, H.Naito N.Inoue: "Photoluminescence properties of InGaAs/GaAsSb typeII quantum well structures lattice-matched to InP"Applied Surface Science. 159/160. 528-531 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 高橋英樹、河村裕一、山本明子、井上直久: "分子線成長InGaAs/GaAsSbタイプII多重量子井戸層のフォトルミネセンスのドーピング特性"Journal of Vaccum Society of Japan. 43. 104-107 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Takasaki,Y.Kawamura T.Katayama, A.Yamamoto, N.Inoue: "Electroluminescence of InGaAs/GaAsSb typeII multiple quantum well clivdes lattice-matched to InP"Journal of Crystal Growth. 227/228. 294-297 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 東野徒土之、河村裕一、藤本理斗、高崎英樹、井上直久: "InP(III)B基板上へのGnAsSb層の分子線エピタキシャル成長"Journal of Vaccum Society of Japan. 44. 57-60 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 藤本理斗、河村裕一、原田英樹、井上直久: "InGaAs/GaAsSbタイプII多主量子井戸層のMBE成長"Journal of Vaccum society of Japan. 44. 65-68 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Takasaki, Y.kawamura, T.Katayama, A.yamamoto, N.Inoue: "Electroluminescence of InGaAs/GaAsSb type II multiple quantum well diodes lattice-matched to InP"Journal of Crystal Growth. 227-228. 294-297 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Katayama, Y.Kawamura, H.Takasaki, A.Yamamoto, and N.Inoue: "Structural dependence of intersubband absorption of InGaAs/GaAsSb type II quantum well structures lattice-matched to InP"Journal of Crystal Growth. 209. 450-453 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Takasaki, Y.Kawamura, T.Katayama, A.Yamamoto, H.Naito, and N.Inoue: "Photoluminescence properties of InGaAs/GaAsSb type II quantum well structures lattice-matched to InP"Applied Surface Science. 159-160. 528-531 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Yamamoto, Y.Kawamura, H.Naito, and N.Inoue: "Optical properties of GaAsSb and InGaAs/GaAsSb type II single heterostructure lattice-matched to InP substrates grown by molecular beam epitaxy"J.Crystal Growth. 201/202. 872 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Kawamura, K.yoshimatsu, and N.Ioue: "Bistability of electroliminescence in InAlAs/AlAsSb type II multiple quantum well diodes"Inst.Phys.Conf.Ser.. No.162. 849-852 (1999)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2002-03-26  

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