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2001 Fiscal Year Final Research Report Summary

Light up-conversion effects of ZnSeTe strained superlattices

Research Project

Project/Area Number 11650022
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionHokkaido Institute of Tecnology

Principal Investigator

IMAI Kazuaki  Hokkaido Institute of Tecnology Department of Engineering Professor, 工学部, 教授 (40001987)

Co-Investigator(Kenkyū-buntansha) SUZUKI Kazuhiko  Hokkaido Institute of Tecnology Department of Engineering Professor, 工学部, 教授 (30226500)
SAWADA Takayuki  Hokkaido Institute of Tecnology Department of Engineering Professor, 工学部, 教授 (40113568)
Project Period (FY) 1999 – 2001
KeywordsMBE / II-VI semiconductors / superlattices / Light wavelenght conversion
Research Abstract

In this investigation, we grew the ZnSe-ZnTe strained superlattices with a dual subband (DSB) structure of [(7, 2)_6(2, 5)_1]_100. The structure and the mechanism of light up-conversion effect are analyzed by the HRXD, Raman scattering and measurements of excitation intensity dependences of PL spectra. The HRXD spectra indicate the satellite peaks of 0, ±1 and - 2 order of the part of (7, 2)_6. The diffraction peaks coincide with the result of calculated simulation. The Raman spectrum shows the ZnSe-like LO and the ZnTe-like LO phonon peaks, which means the sample consists of individual ZnTe layer. The PL spectra showed two peaks at 1.8 and 2.2 eV. The peak at 2.2 eV is from the part of (7, 2)_6 in the superlattice. In the previous investigation, the sample of the structure of [(2, 2)_<12>(2, 5)_3]_<30> indicated the PL peaks at 1.9 and 2.2 eV. It is cleared that we are able to control the photon energy of PL peaks by the structure of the DSB superlattices. The PL peak at 2.2 eV appeared also by excitation with the He-Ne laser, the energy of which is 1.96 eV, I.e., the laser light of 1.96 eV is converted to the light with the energy 2.2 eV (up-conversion). The dependence of the intensity of the 2.2 eV peak on the excitation intensity pointed out a non-linear relation. It is considered the mchanism of the up-conversion involves a step process of transition.

  • Research Products

    (20 results)

All Other

All Publications (20 results)

  • [Publications] K.Suzuki, S.Seto, T.Sawada, K.Imai, M.Adachi, K.Inaba: "Optical characterization of nuclear detector materials"phys. stat. sol. (b). 229. 601-604 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N.Kimura, Y.Nakamura, K.Imai, T.Sawada, I.Tsubono: "Absorption properties of Langmuir-Blodgett films of retinoic acid"Mol. Cryst. and Liq. Cryst.. 371. 41-44 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Sasaki N.Takojima, N.Kimura, I.Tsubono, K.Suzuki, T.Sawada, K.Imai: "Electron-phonon coupling of deep emission In ZuSeTe alloy"J. Cryst. Growth. 227-228. 683-687 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Suzuki, S.Seto, T.Sawada, K.Imai, M.Adachi, K.Inabe: "Photoluminescence measurements on undoped CdZnTe grown by the high-pressure Bridgman method"J. Electronic Materials. 30. 603-607 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Akimoto, M.Tamura, J.Ikeda, Y.Aoki, F.Fujita, K.Sato, A.Homna, T.Sawamura, M.Narita, K.Imai: "Generation and use of parametric X-rays with an electron linear accelerator"Nucl. Instrum. & Methods A. 459. 78-86 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Suzuki, S.Seto, A.Iwata, M.Bingo, T.Sawada, K.Imai: "Transport properties of undoped Cd_<0.9>Zn_<0.1>Te grown by high pressure Bridgman technique"J. Electronic Materials. 29. 704-707 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y. Yamagata, T. Sawada, K. Imai, K. Suzuki: "Potential barrier formed at n-ZnSe regrowth homointerface be MBE"J. Cryst. Growth. Vol. 201/202. 623-626 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Suzuki, Y. Chikarayumi, I. Tsubono, N. Kimura, T. Sawada, K. Imai: "Up-conversion effects of ZnSe-ZnTe superlattices with modulated periodicity"J. Cryst Growth. Vol. 201/202. 477-480 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Suzuki, K. Imai, T. Sawada, S. Seno: "Effect of compositional disorder on optical of Cd_<1-x>Zn_xTe"J. Elec. Mat. Vol. 28. 785-788 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N. Kimura, T. Matuo, K. Machida, K. Imai, T. Sawada, I, Tsubini: "Spectroscopic properties of retinoid molecules in Langmuir-Blodgett Films"Mol. Cryst. & Liq. Cryst. Vol. 337. 353-356 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Sawada, M. Sawada, Y. Yamagata, K. Imai, K. Suzuki, H. Tomozawa: "Electrical properties of metal/n-GaN and PCVD-SiO_2/n-GaN interface"Inst. Phys. Conf. Ser. No. 162 : Chapter 13. 775-780 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Suzuki, A. Iwata, S. Seno, T. Sawada, K. Imai: "Drift mobility measurements of undoped Cd_<0.9>Zn_<0.1>Te grown by high-pressure Bridgman technique"J. Cryst. Growth. Vol. 214/215. 909-912 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Sawada, Y. Ito, K. Imai, K. Suzuki, H. Tomazawa, S. Sakai: "Electrical properties of metal/n-GaN and SiO_2/GaN interfaces and effects of themal annealing"Appl. Surface Sci.. Vol. 159-160. 449-455 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Suzuki, S. Seto, A. Iwata, M. Bingo, T. Sawada, K. Imai: "Transport properties of undoped Cd_<0.9>Zn_<0.1> Te grown by high pressure Bridgman techinique"J. Electronic Materials. Vol. 29. 449-455 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Sawada, Y. Ito, N. Kimura, K. Imai, K. Suzuki, S. Sakai: "Influence of Inhomogeneous barrier on I-V characteristics of metal/GaN Schottky diodes"Proc. Int'l. Workshop on Nitride Semiconductors. (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Akimoto, M. Tamura, J. Aoki, F. Fujita, K. Sato, A. Honma, T. Sawamura, M. Narita, K. Imai: "Generation and use of parametric X-rays with an electron linear accelerator"Nucl. Instrum. & Methods A. Vol. 459. 78-86 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Suzuki, S. Seno, T. Sawada, K. Imai, M. Adachi, K. Inabe: "Photoluminescence measurements on undoped CdZnTe grown by the high-pressure Bridgman method"J. Electronic Materials. Vol. 30. 603-607 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Sasaki, N. Takojima, N. Kimura, I. Tsubono, K. Suzuki, T. Sawada, K. Imai: "Electron-phonon coupling of deep emission In ZnSeTe alloy"J. Cryst. Growth. Vol.227-228. 683-687 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N. Kimura, Y. Nakamura, K. Imai, I. Tsubono: "Absorption properties of Langmuir-Blodgett films of retinoic acid"Mol. Cryst. and Liq. Cryst.. Vol. 371. 41-44 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Suzuki, S. Seno, T. Sawada, K. Imai, M. Adachi, K. Inaba: "Optical characterization of nuclear detector materials"phys. stat. sol. (b). Vol. 229. 601-604 (2002)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2003-09-17  

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