2000 Fiscal Year Final Research Report Summary
Effects of residual oxygen on properties of cubic silicon carbide films
| Project/Area Number |
11650029
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
表面界面物性
|
|---|
| Research Institution | Kyushu Institute of Technology |
|---|
Principal Investigator |
SUN Yong Kyushu Institute of Technology, Assistant, 情報工学部, 助手 (60274560)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
MIYASATO Tatsurou Kyushu Institute of Technology, Professor, 情報工学部, 教授 (90029900)
|
|---|
| Project Period (FY) |
1999 – 2000
|
| Keywords | Silicon carbide / Hydrogen plasma / Epitaxial growth / Low temperature / Silicon substrate / Impurity / Oxygen / Crystallinity |
|---|
| Research Abstract |
We report the self-organized growth of 0D-, 1D- and 2D-nanoscale SiC structures (grains, whiskers, and flakes) by a hydrogen plasma sputtering technique in which a small amount of oxygen is added to the hydrogen feed gas. Selective growth of the different structure is controlled by the substrate temperature, whiskers below approximately 800℃, grains in the range 800-900℃, and flakes at higher temperature. In the case of the first, the additional O atoms bond to Si resulting in tetragonal SiO_2 microcrystals in the SiC films, which nucleate whisker growth electrostatically. When the substrate temperature is above 800℃ deposits of amorphous carbon break up the developing film into small grains. With further increase of temperature, the carbon deposits are increasingly graphitic due to preferential formation of sp^2 bonding due to the presence of oxygen, resulting in the growth of SiC flakes.
|
Research Products
(16 results)
