2000 Fiscal Year Final Research Report Summary
Crystal growth of InGaAsN alloy using ECR plasma and basic investigation for realizing OEIC
| Project/Area Number |
11650336
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka Instizute of Technology |
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Principal Investigator |
YODO Tokuo Osaka Institute of Technology, Electronic Engineering, Associated Professor, 工学部, 助教授 (70288752)
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| Project Period (FY) |
1999 – 2000
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| Keywords | OEIC / ECR plasma / As doping / galium nitride / InGaAsN alloy / lattice matching / GaAsN alloy / Crystal structure |
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| Research Abstract |
In this research, we tried to grow epitaxial growth of In_XGa_<1-X>As_YN_<1-Y> alloy on nominal Si(001) and Si(111) substrates using ECR-MBE method. The alloy composition (Y) of In_XGa_<1-X>As_YN_<1-Y> alloy (x=0) on Si with lattice matching is estimated to be about 0.2. The alloy composition (Y) of In_XGa_<1-X>As_YN_<1-Y> alloy (y≠0) on Si with lattice matching is expected to be less than 0.2. Therefore, The crystal growth of In_XGa_<1-X>As_YN_<1-Y> alloy with good crystalline quality would be possible and well-matched with lattice constant of Si. However, the crystalline quality and crystal structure of In_XGa_<1-X>As_YN_<1-Y> alloy (x=0) are strongly dependent on the quantity of As-doping. The crystal structure has a zincblende type in light doping of As impurity while the crystal structure has a hexagonal type and the crystalline quality is greatly deteriorated in heavy doping. Moreover, the inert nitrogen molecules during ECR plasma obstructs the growth of GaN and drastically lowers the growth rates of GaN epitaxial layers. We have investigated whether this obstruction phenomenon occurs even in epitaxial growth of In_XGa_<1-X>As_YN_<1-Y> alloy (x and y≠0) or not at present.
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