2000 Fiscal Year Final Research Report Summary
Harmless Disposal System of NF3 in the Manufacturing Process of Semiconductor Using Chemical Reaction
| Project/Area Number |
11650788
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
化学工学一般
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| Research Institution | Kansai University |
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Principal Investigator |
YAMAMOTO Hideki Kansai Univ., Faculty of Eng., Associate Professor, 工学部, 助教授 (30174808)
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| Co-Investigator(Kenkyū-buntansha) |
SHIBATA Junji Kansai Univ., Faculty of Eng., Professor, 工学部, 教授 (70067742)
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| Project Period (FY) |
1999 – 2000
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| Keywords | environmental protection / global warming gases / harmless disposal / semiconductor / etching gas / fluoride gas / nitrogen fluoride / metal chloride |
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| Research Abstract |
The chemical reactions of fluoride gases with metal chloride or metal oxide are utilized as an effective treatment for harmless disposal. These chemical reactions can be adopted in the temperature range of 80℃〜400℃, which is lower than that in the combustion treatment (800℃). Reaction products are metal fluoride or metal chloride which are a harmless and a valuable chemical material as one of new resources. This paper concerns with a new harmless disposal treatment of toxic global warming gases.
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