1999 Fiscal Year Annual Research Report

高集積通信システム製作のためのSiGe系MOS-HBT技術の開発

Research Project

Project/Area Number	11694123
Research Category	Grant-in-Aid for Scientific Research (B)
Research Institution	Tohoku University
Principal Investigator	室田淳一東北大学, 電気通信研究所, 教授 (70182144)
Co-Investigator(Kenkyū-buntansha)	桜庭政夫東北大学, 電気通信研究所, 助手 (30271993) 松浦孝東北大学, 電気通信研究所, 助教授 (60181690)
Keywords	SiGe / MOS / HBT / CVD低温選択成長 / in-situ不純物ドーピング / SiGeC / 不純物拡散 / 高選択異方性エッチング
Research Abstract	本基盤研究は、低電圧・低消費電力・超高速・大容量移動体通信システムの実現のため、SiGe系のMOSとHBTを集積した、新しい低電圧・低消費電力・超高速・大容量移動体通信用システムオンチップの製作技術を開発することを目的として、ドイツ半導体物理学研究所研究チームとの国際学術研究としてスタートした。この目的のため、SiGe系半導体極微細構造の形成(反応雰囲気の高清浄化と基板表面吸着の制御、SiGe系半導体薄膜の形成、SiGe系半導体極微細構造の高選択異方性エッチング、SiGe系半導体への不純物の超高精度ドーピング)と、超高速通信用デバイス技術(高精度要素プロセス技術の開発、集積化デバイス製作プロセスの構築、超高速デバイス構造、デバイス試作と超高速動作の評価)の、基本要素の研究を3年計画で実施している。本年度はその初年度として、ドイツ半導体物理学研究所との間で相互訪間し、ドイツ半導体物理学研究所のクリーンルーム整備・デバイス製作ライン構築の指導を行い、SiGe系CVD低温選択成長の研究、SiGe系CVDにおける不純物のin-situ高精度ドーピングの研究、SiGe系極微細MOSデバイスの製作、低温HBT製作プロセスの開発において、各々大きな成果を得た。さらに、SiGeへのCの導入、ドープトSiGeからのドーパント不純物の拡散、極微細MOSデバイスへのSiGeの応用についても研究発表論文に示すように各々大きな成果を得た。

Research Products
(16 results)

All Other

All Publications (16 results)

[Publications] S.Kobayashi et al.: "Segregation and Diffusion of Phosphorus from Doped Si_<1-x>Ge_x Films into Silicon"J. Appl. Phys. 86,10. 5480-5483 (1999)
[Publications] Y.shimamune et al.: "Atomic-Layer Adsorption of P on Si(100) and Ge(100) by PH_3 Using an Ultraclean Low-Pressure Chemical Vapor Deposition"Appl. Surf. Sci.. (in press). (2000)
[Publications] A.Ichikawa et al.: "Epitaxial Growth of Si_<1-x-y>Ge_xC_y Film on Si(100) in a SiH_4-GeH_4-CH_3SiH_3 Reaction"Thin Solid Films. (accepted).
[Publications] S.Kobayashi et al.: "Diffusion and Segregation of Impurities from Doped Si_<1-x>Ge_x Films into Silicon"Thin Solid Films. (accepted).
[Publications] T.Tsuchiya et al.: "Drain Leakage Current and Instability of Drain Current in Si/Si_<1-x>Ge_x MOSFETs"Thin Solid Films. (accepted).
[Publications] H.Takeuchi et al.: "Etching of Si_<1-x>Ge_x Epitaxial Films Using an ECR Chlorine Plasma"Abs. Of 1999 Spring Meeting, The European Materials Research Society. (D-III .2). (1999)
[Publications] S.Ishida et al.: "Micro-Roughness Control of the Si_<1-x>Ge_x Surfaces Treated with Buffered Hydrofluoric Acid"Abs. Of Int. Joint Conf. On Si Epitaxy and Heterostructures. PI-2 (1999)
[Publications] J.Murota et al.: "CVD Si_<1-x>Ge_x Epitaxial Growth and Its Application to MOS Devices"Proc. Of the SPIE Conference on Microelectronic Device Technology III. 3881. 33-45 (1999)
[Publications] J.Murota et al.: "SiGe Processing and its Applicaton to MOS Devices"Abs. Of the 1st Microelectronics Workshop. 30-31 (1999)
[Publications] J.Murota et al.: "Atomically Controlled Processing for Si-Based Ultrasmall Devices"Ext. Abs. Of 18th Symposium on Future Electron Devices. 65-70 (1999)
[Publications] T.Kikuchi et al.: "Super Self-Aligned Processing for Sub 0.1μm MOS Devices Using Selective Si_<1-x>Ge_x CVD"Proc. Of the First International Symposium on ULSI Process Integration. PV99-18. 147-153 (1999)
[Publications] T.Matsuura et al.: "Atomic-Order Side-Wall Passivation with Nitrogen in ECR Plasma Etching of Si"Proc. Of the Plasma Etching Processes for Sub-Quarter Micron Devices. PV99-30(in press). (2000)
[Publications] B.Tillack et al.: "Atomic Layer Doping of SiGe-Fundamentals and Device Applications"Abs. Of Int.Joint Conf. On Si Epitaxy and Heterostructures. E-5 (1999)
[Publications] D.Knoll et al.: "Comparison of SiGe and SiGe: C Heterojunction Bipolar Transistors"Abs. Of Int. Joint Conf. On Si Epitaxy and Heterostructures. J-2 (1999)
[Publications] B.Heinemann et al.: "Comparative Analysis of Minority Carrier Ttransport in npn Bipolar Transistors with Si, Si_<1-x>Ge_x, and Si_<1-y>C_y Base Layers"Abs. Of Int. Joint Conf. On Si Epitaxy and Heterostructures. J-3 (1999)
[Publications] J.Murota et al.: "Future Trends in Microelectronics Process Technology for Sub-0.1μm Silicon Devices, pp.79-90)"John Wiley & Sons,Inc.. 12 (1999)

1999 Fiscal Year Annual Research Report

高集積通信システム製作のためのSiGe系MOS-HBT技術の開発

Principal Investigator

室田 淳一 東北大学, 電気通信研究所, 教授 (70182144)

Research Products

[Publications] S.Kobayashi et al.: "Segregation and Diffusion of Phosphorus from Doped Si_<1-x>Ge_x Films into Silicon"J. Appl. Phys. 86,10. 5480-5483 (1999)

[Publications] Y.shimamune et al.: "Atomic-Layer Adsorption of P on Si(100) and Ge(100) by PH_3 Using an Ultraclean Low-Pressure Chemical Vapor Deposition"Appl. Surf. Sci.. (in press). (2000)

[Publications] A.Ichikawa et al.: "Epitaxial Growth of Si_<1-x-y>Ge_xC_y Film on Si(100) in a SiH_4-GeH_4-CH_3SiH_3 Reaction"Thin Solid Films. (accepted).

[Publications] S.Kobayashi et al.: "Diffusion and Segregation of Impurities from Doped Si_<1-x>Ge_x Films into Silicon"Thin Solid Films. (accepted).

[Publications] T.Tsuchiya et al.: "Drain Leakage Current and Instability of Drain Current in Si/Si_<1-x>Ge_x MOSFETs"Thin Solid Films. (accepted).

[Publications] H.Takeuchi et al.: "Etching of Si_<1-x>Ge_x Epitaxial Films Using an ECR Chlorine Plasma"Abs. Of 1999 Spring Meeting, The European Materials Research Society. (D-III .2). (1999)

[Publications] S.Ishida et al.: "Micro-Roughness Control of the Si_<1-x>Ge_x Surfaces Treated with Buffered Hydrofluoric Acid"Abs. Of Int. Joint Conf. On Si Epitaxy and Heterostructures. PI-2 (1999)

[Publications] J.Murota et al.: "CVD Si_<1-x>Ge_x Epitaxial Growth and Its Application to MOS Devices"Proc. Of the SPIE Conference on Microelectronic Device Technology III. 3881. 33-45 (1999)

[Publications] J.Murota et al.: "SiGe Processing and its Applicaton to MOS Devices"Abs. Of the 1st Microelectronics Workshop. 30-31 (1999)

[Publications] J.Murota et al.: "Atomically Controlled Processing for Si-Based Ultrasmall Devices"Ext. Abs. Of 18th Symposium on Future Electron Devices. 65-70 (1999)

[Publications] T.Kikuchi et al.: "Super Self-Aligned Processing for Sub 0.1μm MOS Devices Using Selective Si_<1-x>Ge_x CVD"Proc. Of the First International Symposium on ULSI Process Integration. PV99-18. 147-153 (1999)

[Publications] T.Matsuura et al.: "Atomic-Order Side-Wall Passivation with Nitrogen in ECR Plasma Etching of Si"Proc. Of the Plasma Etching Processes for Sub-Quarter Micron Devices. PV99-30(in press). (2000)

[Publications] B.Tillack et al.: "Atomic Layer Doping of SiGe-Fundamentals and Device Applications"Abs. Of Int.Joint Conf. On Si Epitaxy and Heterostructures. E-5 (1999)

[Publications] D.Knoll et al.: "Comparison of SiGe and SiGe: C Heterojunction Bipolar Transistors"Abs. Of Int. Joint Conf. On Si Epitaxy and Heterostructures. J-2 (1999)

[Publications] B.Heinemann et al.: "Comparative Analysis of Minority Carrier Ttransport in npn Bipolar Transistors with Si, Si_<1-x>Ge_x, and Si_<1-y>C_y Base Layers"Abs. Of Int. Joint Conf. On Si Epitaxy and Heterostructures. J-3 (1999)

[Publications] J.Murota et al.: "Future Trends in Microelectronics Process Technology for Sub-0.1μm Silicon Devices, pp.79-90)"John Wiley & Sons,Inc.. 12 (1999)

室田淳一東北大学, 電気通信研究所, 教授 (70182144)