高集積通信システム製作のためのSiGe系MOS-HBT技術の開発

2000 Fiscal Year Annual Research Report

• Project/Area Number: 11694123
• Research Institution: Tohoku University
• Principal Investigator: 室田 淳一 東北大学, 電気通信研究所, 教授 (70182144)
• Co-Investigator(Kenkyū-buntansha): 山本 裕司 日本学術振興会, 日本学術振興会・特別研究員 ; 櫻庭 政夫 東北大学, 電気通信研究所, 助手 (30271993) ; 松浦 孝 東北大学, 電気通信研究所, 助教授 (60181690)
• Keywords: SiGe / MOS / HBT / CVD低温選択成長 / in-situ不純物ドーピング / SiGeC / 不純物拡散 / 高選択異方性エッチング

Research Abstract

本基盤研究は、低電圧・低消費電力・超高速・大容量移動体通信システムの実現のため、SiGe系のMOSとHBTを集積した、新しい低電圧・低消費電力・超高速・大容量移動体通信用システムオンチップの製作技術を開発することを目的として、ドイツ半導体物理学研究所研究チームとの国際学術研究として3年計画で推進している。本年度は、SiGe系半導体極微細構造の形成(反応雰囲気の高清浄化と基板表面吸着の制御、SiGe系半導体薄膜の形成、SiGe系半導体極微細構造の高選択異方性エッチング、SiGe系半導体への不純物の超高精度ドーピング)と、超高速通信用デバイス技術(高精度要素プロセス技術の開発、集積化デバイス製作プロセスの構築、超高速デバイス構造、デバイス試作と超高速動作の評価)の、基本要素の研究を実施した。特にMOS-HBT集積化デバイスの製作のため、ドイツ半導体物理学研究所に滞在した日本学術振興会・特別研究員山本の研究分担協力を得、また、SiGe系MOS-HBT集積化システムのためのSiGe系CVD低温選択成長の研究、SiGe系CVDにおける不純物のin-situ高精度ドーピングの研究、SiGe系極微細MOSデバイスの製作を行い、低温HBT製作プロセスにおけるSiGe低温成長による高濃度Pドープ、CドープによるB、Pの拡散抑制効果を用いた高速へテロHBT試作など、極めて重要な成果を得た。さらに、SiGeへのCの導入、ドープトSiGeからのドーパント不純物の拡散、SiGeの極微細MOSデバイスへの応用等を実現する等、研究発表論文にも示すように大きな成果を得た。

Research Products

• [Publications] T.Takatsuka et al: "Surface Reaction of CH_3SiH_3 on Ge(100) and Si(100)"Appl.Surf.Sci.. Vol.162-163. 156-160 (2000)
• [Publications] Y.Shimamune et al: "Atomic-Layer Adsorption of P on Si(100) and Ge(100) by PH_3 Using an Ultraclean Low-Pressure Chemical Vapor Deposition"Appl.Surf.Sci.. Vol.162-163. 390-394 (2000)
• [Publications] A.Ichikawa et al: "Epitaxial Growth of Si_<1-x-y>Ge_xC_y Film on Si(100) in a SiH_4-GeH_4-CH_3SiH_3 Reaction"Thin Solid Films. Vol.369,No.1-2. 167-170 (2000)
• [Publications] T.Tsuchiya et al: "Drain Leakage Current and Instability of Drain Current in Si/Si_<1-x>Ge_x MOSFETs "Thin Solid Films. Vol.369,No.1-2. 379-382 (2000)
• [Publications] T.Noda et al: "Doping and Electrical Characteristics of in-situ Heavily B-Doped Si_<1-x-y>Ge_xC_y Films Epitaxially Grown Using Ultraclean LPCVD"Thin Solid Films. Vol.380. 57-60 (2000)
• [Publications] Y.Shimamune et al: "Atomic-Layer Doping in Si by Alternately Supplied PH_3 and SiH_4"Thin Solid Films. Vol.380. 134-136 (2000)
• [Publications] 室田淳一 他: "CVDSi_<1-x>Ge_xエピタキシャル成長とドーピング制御"日本結晶成長学会誌. Vol.27,No.4. 171-178 (2000)
• [Publications] D.Lee et al: "Phosphorus Doping in Si_<1-x-y>Ge_xC_y Epitaxial Growth by Low-Pressure Chemical Vapor Deposition Using a SiH_4-GeH_4-CH_3SiH_3-PH_3-H_2 Gas System"Jpn.J.Appl.Phys.. Vol.40,No.4B(in press). (2001)
• [Publications] Y.Yamamoto et al: "Surface Adsorption of WF_6 on Si and SiO_2 in Selective W-CVD"Abs.of 197th Meeting of the Electrochemical Society. 928 (2000)
• [Publications] D.Lee et al: "In-Situ Impurity Doping in Si_<1-x-y>Ge_xC_y Epitaxial Growth Using Ultraclean LPCVD"Abs.of 2000 International Conf.on Solid State Devices and Materials. 206-207 (2000)
• [Publications] M.Fujiu et al: "Thermal Stability of Si and C Atomic Layers Formed on Ge(100) in Silane and Methylsilane Reactions"Abs.of American Vacuum Society 47th Internatonal Symposium : Vacuum Thin Films, Surafces/Interfaces, Processing & NANO-6. TF-MoM4 (2000)
• [Publications] J.Murota et al: "Atomically Controlled Processing for Fabrication of Si-based Ultimate-Small Devices"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 131-134 (2000)
• [Publications] O.Jintsugawa et al: "Thermal Nitridation of Ultrathin Silicon Dioxide Films Using NH_3 Gas"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 227-230 (2000)
• [Publications] M.Fujiu et al: "Surface Reaction of Silane and Methylsilane on Ge(100)"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 262-265 (2000)
• [Publications] D.Lee et al: "Epitaxial Growth and Electrical Characteristics of Impurity-Doped Si_<1-x-y>Ge_xC_y on Si(100) by Ultraclean LPCVD"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 270-273 (2000)
• [Publications] Y.Yamamoto et al: "Surface Adsorption and Reaction on Si and SiO_2 at Very Low Temperature in a WF_6-SiH_4 Gas System"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 294-297 (2000)
• [Publications] B.Tillack: "Atomic Layer Doping of SiGe for Heterojunction Devices"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 27-30 (2000)
• [Publications] T.Yamashiro et al: "Fabrication of 0.1um MOSFETs with Super Self-Aligned Ultrashallow Junction Formed by Selective In-Situ Doped Si_<1-x>Ge_x CVD"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. II-07 (2001)
• [Publications] B.Tillack et al: "SiGe : C Epitaxy for HBT Application"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. III-01 (2001)
• [Publications] D.Knoll et al: "Investigation of Epitaxy Loading and Geometry Effects in an 8-Inch SiGe : C BiCMOS Technology"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. IV-04 (2001)
• [Publications] J.Murota: "Atomically Controlled Processing for Group IV Semiconductors"Abs.of the 9th European Conference on Applications of Surface and Interface Analysis. (invited). (2001)