2001 Fiscal Year Annual Research Report

高集積通信システム製作のためのSiGe系MOS-HBT技術の開発

Research Project

Project/Area Number	11694123
Research Institution	Tohoku University
Principal Investigator	室田淳一東北大学, 電気通信研究所, 教授 (70182144)
Co-Investigator(Kenkyū-buntansha)	櫻庭政夫東北大学, 電気通信研究所, 助手 (30271993) 松浦孝東北大学, 電気通信研究所, 助教授 (60181690)
Keywords	SiGe / MOS / HBT / CVD低温選択成長 / in-situ不純物ドーピング / SiGeC / 不純物拡散 / 高選択異方性エッチング
Research Abstract	本基盤研究は、低電圧・低消費電力・超高速・大容量移動体通信システムの実現のため、SiGe系のMOSとHBTを集積した、新しい低電圧・低消費電力・超高速・大容量移動体通信用システムオンチップの製作技術を開発することを目的として、ドイツ半導体物理学研究所研究チームとの国際学術研究として3年計画で推進してきた。本年度は、その最終年度として、SiGe系半導体極微細構造の形成(不純物ドープSiGe(C)半導体薄膜形成の超高精度制御の実現とその定式化、SiGe系半導体極微細構造の高選択異方性エッチング、プロセス原料ガス分子の吸着・反応定数の一覧表への集約、原子層成長制御および原子層プラズマプロセスのデータベース化、Pの原子層ドーピングによる超高濃度半導体の実現、原子オーダ窒化制御と窒素の原子層ドーピングの実現)と、超高速通信用デバイス技術(高精度要素プロセス技術の開発、集積化デバイス製作プロセスの構築、超高速デバイス構造とその製作プロセスの検討、デバイス試作と超高速動作の評価)の基盤研究を実施し、成果を得た。特に、デバイス技術としては、ソース/ドレインに自己整合形成不純物ドープSiGeを用いた0.1ミクロン極微細MOSデバイスのCMOS構成化、SiGeチャネルpMOSFETでの優れた低周波雑音特性の実証、100GHz-HBTのデバイス構造およびプロセス、低抵抗配線コンタクトの製作、CドープによるB,Pの不純物拡散抑制制御など、研究発表論文にも示すように重要な成果を得た。さらに、デバイスへの応用に重要な、SiGe(C)極微細構造の高精度評価法の開発も行った。

Research Products

(22 results)

All Other

All Publications (22 results)

[Publications] T.Watanabe et al.: "Atomic-Order Thermal Nitridation of Si (100) and Subsequent Growth of Si"J. Vac. Sci. Technol. A.. Vol.19,No.4,PartII. 1907-1911 (2001)
[Publications] D.Lee et al.: "Phosphorus Doping in Si_<1-x-y>Ge_xC_y Epitaxial Growth by Low-Pressure Chemical Vapor Deposition Using a SiH_4-GeH_4-CH_3SiH_3-PH_3-H_2 Gas System"Jpn. J. Appl. Phys. Vol.40,Part1. 2697-2700 (2001)
[Publications] T.Kanetsuna et al.: "Surface Adsorption and Reaction of Chlorine on Impurity-Doped Single Crystalline Si Using Electron Cyclotron Resonance Plasma"J. Electrochem. Soc.. Vol.148,No.8. G420-G423 (2001)
[Publications] 室田淳一他: "CVD法によるSi_<1-x-y>Ge_xC_yエピタキシャル成長とドーピング制御"応用物理学会誌. 第70巻,第9号. 1082-1086 (2001)
[Publications] Y.Shimamune et al.: "Epitaxial Growth of Heavily P-doped Si Films at 450℃ by Alternately Supplied PH_3 and SiH_4"J.Phys.IV France.. Vol.11,Pr3. 255-260 (2001)
[Publications] T.Tsuchiya et al.: "Low-Frequency Noise in Si_<1-x>Ge_xp-Channel Metal Oxide Semiconductor Field-Effect Transistors"Jpn. J. Appl. Phys.. Vol.40,Part1. 5290-5293 (2001)
[Publications] T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction in MOSFETs Using Selective Si_<1-x>Ge_x CVD"Materials Science and Engineering B. Vol.89,Issues1-3. 120-124 (2002)
[Publications] Y.Shimamune et al.: "Doping and Electrical Characteristics of Si Films Eptaxially Grown at 450℃ by Alternately Supplied PH_3 and SiH_4"2001 Spring Meeting, The European Materials Research Society, Strasburg, France. D-X,3 (2001)
[Publications] M.Fujiu et al.: "Influence of Carbon on Thermal Stability of Silicon Atomic Layer Formed on Ge(100)"2001 Spring Meeting, The European Materials Research Society. D-VIII/P9 (2001)
[Publications] T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction MOSFETs Using Selective Si_<1-x> Ge_x"2001 Spring Meeting, The European Materials Research Society. D-V/P20 (2001)
[Publications] J.Murota et al.: "Atomically Precise Control of Heterointerfaces for High-Performance SiGe-Based Heterodevices"2001 Advanced Research Workshop, Future Trends in Microelectronics. p51 (2001)
[Publications] J.Murota et al.: "Atomically Controlled Processing for Group IV Semiconductors(Keynote Lecture)"9th European Conference on Applications of Surface and Interface Analysis(SIA). 20 (2001)
[Publications] T.Seino: "Atomic-Order Nitridation of SiO_2 by a Nitrogen Plasma"9th European Conference on Applications of Surface and Interface Analysis(SIA). 193 (2001)
[Publications] O.Jintsugawa et al.: "Thermal Nitridation of Ultrathin SiO_2 on Si by NH_3"9th European Conference on Applications of Surface and Interface Analysis(SIA). 194 (2001)
[Publications] J.Murota et al.: "CVD SiGe(C) Epitaxial Growth and Its Application to MOS Devices(Invited Paper)"The Sixth International Conference on Solid-State and Integrated-Circuit Technology. 525-530 (2001)
[Publications] T.Seino et al.: "Atomic-Order Plasma Nitridation of Ultrathin Silicon Dioxide Films"AVS 48th International Symposium. 53 (2001)
[Publications] Y.Hashiba: "Growth Characteristics of Si_<1-x-y>Ge_xC_y on Si(100) and SiO_2 in Ultraclean Low-Temperature LPCVD"AVS 48th International Symposium. 135 (2001)
[Publications] D.Muto. et al.: "Self-Limited Layer-by-Layer Growth of Si by Alternated SiH_4 Supply and Ar Plasma Exposure"AVS 48th International Symposium. 179 (2001)
[Publications] T.Matsuura et al.: "Application of Photosensitive Methylsilsesquiazane(MSZ) to Lithographic Fabrication of Three Dimensional Periodic Structures"AVS 48th International Symposium. 229 (2001)
[Publications] Y.C.Jeong et al.: "Si Epitaxial Growth on the Atomic-Order Nitrided Si(100) Surface in SiH_4 Reaction"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices. Abs.8.3 (2001)
[Publications] Y.Shimamune et al.: "Heavy Doping Characteristics of Si Films Epitaxially Grown at 450℃ by Alternately Supplied PH_3 and SiH_4"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices. Abs.8.4 (2001)
[Publications] D.Kruger et al.: "Transient Processes and Structural Transformations in Si and Si_xGe_<1-x> Layers During Oxygen Implantation and Sputtering"13th International Conference on Secondary Ion Mass Spectrometry and Related Topics(SIMS XIII). 108 (2001)

2001 Fiscal Year Annual Research Report

高集積通信システム製作のためのSiGe系MOS-HBT技術の開発

Principal Investigator

室田 淳一 東北大学, 電気通信研究所, 教授 (70182144)

Research Products

[Publications] T.Watanabe et al.: "Atomic-Order Thermal Nitridation of Si (100) and Subsequent Growth of Si"J. Vac. Sci. Technol. A.. Vol.19,No.4,PartII. 1907-1911 (2001)

[Publications] D.Lee et al.: "Phosphorus Doping in Si_<1-x-y>Ge_xC_y Epitaxial Growth by Low-Pressure Chemical Vapor Deposition Using a SiH_4-GeH_4-CH_3SiH_3-PH_3-H_2 Gas System"Jpn. J. Appl. Phys. Vol.40,Part1. 2697-2700 (2001)

[Publications] T.Kanetsuna et al.: "Surface Adsorption and Reaction of Chlorine on Impurity-Doped Single Crystalline Si Using Electron Cyclotron Resonance Plasma"J. Electrochem. Soc.. Vol.148,No.8. G420-G423 (2001)

[Publications] 室田淳一他: "CVD法によるSi_<1-x-y>Ge_xC_yエピタキシャル成長とドーピング制御"応用物理学会誌. 第70巻,第9号. 1082-1086 (2001)

[Publications] Y.Shimamune et al.: "Epitaxial Growth of Heavily P-doped Si Films at 450℃ by Alternately Supplied PH_3 and SiH_4"J.Phys.IV France.. Vol.11,Pr3. 255-260 (2001)

[Publications] T.Tsuchiya et al.: "Low-Frequency Noise in Si_<1-x>Ge_xp-Channel Metal Oxide Semiconductor Field-Effect Transistors"Jpn. J. Appl. Phys.. Vol.40,Part1. 5290-5293 (2001)

[Publications] T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction in MOSFETs Using Selective Si_<1-x>Ge_x CVD"Materials Science and Engineering B. Vol.89,Issues1-3. 120-124 (2002)

[Publications] Y.Shimamune et al.: "Doping and Electrical Characteristics of Si Films Eptaxially Grown at 450℃ by Alternately Supplied PH_3 and SiH_4"2001 Spring Meeting, The European Materials Research Society, Strasburg, France. D-X,3 (2001)

[Publications] M.Fujiu et al.: "Influence of Carbon on Thermal Stability of Silicon Atomic Layer Formed on Ge(100)"2001 Spring Meeting, The European Materials Research Society. D-VIII/P9 (2001)

[Publications] T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction MOSFETs Using Selective Si_<1-x> Ge_x"2001 Spring Meeting, The European Materials Research Society. D-V/P20 (2001)

[Publications] J.Murota et al.: "Atomically Precise Control of Heterointerfaces for High-Performance SiGe-Based Heterodevices"2001 Advanced Research Workshop, Future Trends in Microelectronics. p51 (2001)

[Publications] J.Murota et al.: "Atomically Controlled Processing for Group IV Semiconductors(Keynote Lecture)"9th European Conference on Applications of Surface and Interface Analysis(SIA). 20 (2001)

[Publications] T.Seino: "Atomic-Order Nitridation of SiO_2 by a Nitrogen Plasma"9th European Conference on Applications of Surface and Interface Analysis(SIA). 193 (2001)

[Publications] O.Jintsugawa et al.: "Thermal Nitridation of Ultrathin SiO_2 on Si by NH_3"9th European Conference on Applications of Surface and Interface Analysis(SIA). 194 (2001)

[Publications] J.Murota et al.: "CVD SiGe(C) Epitaxial Growth and Its Application to MOS Devices(Invited Paper)"The Sixth International Conference on Solid-State and Integrated-Circuit Technology. 525-530 (2001)

[Publications] T.Seino et al.: "Atomic-Order Plasma Nitridation of Ultrathin Silicon Dioxide Films"AVS 48th International Symposium. 53 (2001)

[Publications] Y.Hashiba: "Growth Characteristics of Si_<1-x-y>Ge_xC_y on Si(100) and SiO_2 in Ultraclean Low-Temperature LPCVD"AVS 48th International Symposium. 135 (2001)

[Publications] D.Muto. et al.: "Self-Limited Layer-by-Layer Growth of Si by Alternated SiH_4 Supply and Ar Plasma Exposure"AVS 48th International Symposium. 179 (2001)

[Publications] T.Matsuura et al.: "Application of Photosensitive Methylsilsesquiazane(MSZ) to Lithographic Fabrication of Three Dimensional Periodic Structures"AVS 48th International Symposium. 229 (2001)

[Publications] Y.C.Jeong et al.: "Si Epitaxial Growth on the Atomic-Order Nitrided Si(100) Surface in SiH_4 Reaction"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices. Abs.8.3 (2001)

[Publications] Y.Shimamune et al.: "Heavy Doping Characteristics of Si Films Epitaxially Grown at 450℃ by Alternately Supplied PH_3 and SiH_4"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices. Abs.8.4 (2001)

[Publications] D.Kruger et al.: "Transient Processes and Structural Transformations in Si and Si_xGe_<1-x> Layers During Oxygen Implantation and Sputtering"13th International Conference on Secondary Ion Mass Spectrometry and Related Topics(SIMS XIII). 108 (2001)

室田淳一東北大学, 電気通信研究所, 教授 (70182144)