| Co-Investigator(Kenkyū-buntansha) |
SAKURABA Masao TOHOKU UNIVERSITY, RESEARCH INSTITUTE OF ELECTRICAL COMMUNICATION, RESEARCH ASSOCIATE, 電気通信研究所, 助手 (30271993)
MATSUURA Takashi TOHOKU UNIVERSITY, RESEARCH INSTITUTE OF ELECTRICAL COMMUNICATION, ASSOCIATE PROFESSOR, 電気通信研究所, 助教授 (60181690)
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| Research Abstract |
In this scientific research, in order to realize the high speed and large capacitance mobile communication system with low working voltage and low power consumption, a new mobile communication System-On-Chip which is mainly integrated by SiGe-based MOS and HBT have been developed under the 3-year-plan from 1999 with the co-work of the Innovation for High Performance Microelectronics (IHP), Germany. In the last year of the 3 years, the study on the ultra-small structure formation of SiGe and the ultra-high speed mobile-communication device fabrication was conducted. The study on the ultra-small SiGe structure formation includes the realization of the exact control of impurity-doped SiGe(C) thin film deposition, of the exact anisotropy etching control of ultra-small structure SiGe(C)-based semiconductor, of the integration of the adsorption/reaction constant for source gas molecules in CVD process, of the database development of the atomic layer growth and the atomic layer plasma process
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, of the heavily P-doped semiconductor, and of atomic order nitridation and atomic order nitrogen doping control. Moreover, the study on the ultra-high speed device fabrication includes the development and the investigation of highly controllable process technology, of ultra-large scale integrated circuit fabrication process, of the ultra-high speed device structure, and the evaluation of the fabricated devices. From these studies, especially, the CMOS applicability of 0.1-μm MOSFETs with super self-aligned ultra-shallow junction formed by selective B-doped SiGe epitaxy, the excellent low frequency noise characteristics of SiGe-channel pMOSFET, the device fabrication process and the structure of 100GHz-HBT, the metallization technology with ultra-low contact resistance, and the exact control of B- or P-doped SiGe(C) epitaxial growth have been reported. Furthermore, highly exact evaluation process of the ultra-small SiGe(C) structure, which is extremely important to device application, was developed. Less
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