2000 Fiscal Year Annual Research Report

半導体中に埋め込まれた金属による量子干渉デバイスに関する研究

Research Project

Project/Area Number	11694136
Research Institution	Tokyo Institute of Technology
Principal Investigator	古屋一仁東京工業大学, 大学院・理工学研究科, 教授 (40092572)
Co-Investigator(Kenkyū-buntansha)	町田信也東京工業大学, 大学院・理工学研究科, 助手 (70313335) 須原理彦東京都立大学, 工学研究科, 助教授 (80251635) 宮本恭幸東京工業大学, 大学院・理工学研究科, 助教授 (40209953)
Keywords	埋め込みタングステン細線 / 固体バイプリズム / コヒーレントエミッタ / 埋め込み金属ホットエレクトロントランジスタ / 引力ポテンシャル / OMVPE / タングステンスパッタ / free-standing wire
Research Abstract	本年度は理論、実験研究により以下の成果を得た。 1.量子干渉デバイスのためのコヒーレントエミッタの提案日本/スウェーデン間の共同で提案した固体電子波バイプリズムに要求される高い電子コヒーレンスの実現に向けて、二重障壁共鳴トンネル構造の共鳴準位とソースのフェルミレベルを精密に制御するゲート層によりなるコヒーレントエミッタを提案し、理論解析によりその動作原理を証明した。 2.埋め込み金属ホットエレクトロントランジスタによる引力形成の実証次に固体バイプリズムの動作原理の中心となる、埋め込みタングステン細線周囲の引力ポテンシャル形成の実証を目指し、埋め込み金属ホットエレクトロントランジスタの試作、評価を行った。OMVPEによるGaAs中タングステン細線の埋め込み成長によるデバイスの作製をスウェーデンで行い、測定を日本で行った。測定データの解析から、埋め込み金属細線周囲の引力ポテンジャル形成を初めて実証した。 3.タングステン薄膜の低抵抗率化昨年度作製したタングステン薄膜の抵抗率がバルク値の約30倍となった問題解決のため、タングステン薄膜抵抗率の作製法、条件依存性を調べた。当初期待されていたE-gunによる高温度蒸着による改善はなされなかったが、スパッタによる製膜が有効であることを確認し、製膜時の圧力、膜厚に抵抗率が大きく依存することが解った。圧力3mTorr、膜厚200nmにおいてバルク値の6倍まで低抵抗率化に成功した。今後タングステンのさらなる薄膜化、細線化に伴う低抵抗率化の実現が重要となる。 4.埋め込みタングステン電極用パッドのアイソレーションのためのfree-standing wire 固体バイプリズムの埋め込み電極用パッドに干渉電流よりも莫大な電流が流れる問題点を解決するために、半絶縁性基板を用いたfree-standing wire形成を提案し、プロセスの検討を行った。

Research Products
(23 results)

All Other

All Publications (23 results)

[Publications] B.Gustafson et al.: "Lateral current confinement in selectively grown resonant tunneling transistor with an embedded gate"Physica E. 7・3-4. 819-822 (2000)
[Publications] D.Hessman et al.: "Artificial atom with a knob : Fermi-level tuning in single quantum dot spectroscopy"25^<th> International Conference on the Physics of Semiconductors. C11. (2000)
[Publications] L.Shorubalko et al.: "Fabrication and transport characterization of GaInAs/InP planar quantum dots"25^<th> International Conference on the Physics of Semiconductors. D158. (2000)
[Publications] B.Gustafson et al.: "Transport studies of a gated quantum dot structure : Experiment and theory"25^<th> International Conference on the Physics of Semiconductors. H156. (2000)
[Publications] I.Shorubalko et al.: "InGaAs/InP based ballistic rectifiers"25^<th> International Conference on the Physics of Semiconductors. J44. (2000)
[Publications] M.Gerling et al.: "Growth of InAs quantum dots on (110) oriented cleaved GaAs surfaces"25^<th> International Conference on the Physics of Semiconductors. M058. (2000)
[Publications] N.Machida and K.Furuya: "Numerical simulation of hot electron interference in a solid state biprism : Conditions for interference observation"Journal of Applied Physics. 88・5. 2885-2891 (2000)
[Publications] N.Machida and K.Furuya: "Coherent hot electron emitter"Japanese Journal of Applied Physics. 40・1. 64-68 (2001)
[Publications] B.A.M.Hansson et al.: "Simulation of interference patterns in solid-state biprism devices"Solid State Electronics. 44. 1275-1280 (2000)
[Publications] T.Arai et al.: "Toward nano-metal buried structure in InP-2Onm wire and InP buried growth of tungsten"Physica E. 7・3-4. 896-901 (2000)
[Publications] T.Arai et al.: "First fabrication of GaInAs/InP buried metal heterojunction bipolar transistor and reduction of base-collector capacitance"Japanese Journal of Applied Physics. 39・6A. L503-L505 (2000)
[Publications] T.Arai et al.: "GaAs buried growth over tungsten stripes using TEG and TMG "Journal of Crystal Growth. 221・1-4. 212-219 (2000)
[Publications] Y.Miyamoto et al.: "Fabrication and transport properties of 5O-nm-wide Au/Cr/GaInAs electrode for electron wave interference device"Applied Surface Science. 159-160. 179-185 (2000)
[Publications] M.Nagase et al.: "Peak width analysis of current-voltage characteristics of triple-barrier resonant tunneling diodes"Japanese Journal of Applied Physics. 39・6A. 3314-3318 (2000)
[Publications] N.Sakai et al.: "Theoretical relation between spatial resolution and efficiency of detection in scanning hot electron microscope"Japanese Journal of Applied Physics. 39・9A. 5256-5260 (2000)
[Publications] B.Y.Zhang et al.: "A vertical hot electron emitter of InGaAs/AlAs heterostructure with wide energy range at high current density"Physica E. 7. 851-854 (2000)
[Publications] N.Machida et al.: "Numerical simulation of hot electron interference in solid-state biprism "25^<th> International Conference on the Physics of Semiconductors . M261. (2000)
[Publications] T.Arai et al.: "CBC reduction in GaInAs/InP buried metal heterojunction bipolar transistor"12^<th> International Conference on Indium Phosphide and Related Materials. TuB1.6. (2000)
[Publications] T.Arai et al.: "GaAs buried growth over tungsten stripes using TEG and TMG"10^<th> International Conference on Metalorganic Vapor Phase Epitaxy. TuA-3. (2000)
[Publications] T.Arai et al.: "InP DHBT with 0.5 um wide emitter along <010> direction toward BM-HBT with narrow emitter"Topical Workshop on Heterostructure Microelectronics. Tue-3. (2000)
[Publications] Y.Miyamoto et al.: "Very shallow n-GaAs ohmic contact with 10 nm-thick GaInAs layer "19^<th> Electronic Materials Symposium. B2. (2000)
[Publications] M.Nagase et al.: "Phase breaking effect appearing in I-V characteristics of double-barrier resonant-tunneling diodes-Theoretical fitting over four orders of magnitude"2000 International Conference on Solid State Devices and Materials. D-6-5. (2000)
[Publications] B.Zhang and K.Furuya: "Characterization of hot electron transmission tunneling through the gap potential in scanning hot electron microscopy"10^<th> International Conference on Solid Films and Surface. Mo-P-167. (2000)

2000 Fiscal Year Annual Research Report

半導体中に埋め込まれた金属による量子干渉デバイスに関する研究

Principal Investigator

古屋 一仁 東京工業大学, 大学院・理工学研究科, 教授 (40092572)

Research Products

[Publications] B.Gustafson et al.: "Lateral current confinement in selectively grown resonant tunneling transistor with an embedded gate"Physica E. 7・3-4. 819-822 (2000)

[Publications] D.Hessman et al.: "Artificial atom with a knob : Fermi-level tuning in single quantum dot spectroscopy"25^<th> International Conference on the Physics of Semiconductors. C11. (2000)

[Publications] L.Shorubalko et al.: "Fabrication and transport characterization of GaInAs/InP planar quantum dots"25^<th> International Conference on the Physics of Semiconductors. D158. (2000)

[Publications] B.Gustafson et al.: "Transport studies of a gated quantum dot structure : Experiment and theory"25^<th> International Conference on the Physics of Semiconductors. H156. (2000)

[Publications] I.Shorubalko et al.: "InGaAs/InP based ballistic rectifiers"25^<th> International Conference on the Physics of Semiconductors. J44. (2000)

[Publications] M.Gerling et al.: "Growth of InAs quantum dots on (110) oriented cleaved GaAs surfaces"25^<th> International Conference on the Physics of Semiconductors. M058. (2000)

[Publications] N.Machida and K.Furuya: "Numerical simulation of hot electron interference in a solid state biprism : Conditions for interference observation"Journal of Applied Physics. 88・5. 2885-2891 (2000)

[Publications] N.Machida and K.Furuya: "Coherent hot electron emitter"Japanese Journal of Applied Physics. 40・1. 64-68 (2001)

[Publications] B.A.M.Hansson et al.: "Simulation of interference patterns in solid-state biprism devices"Solid State Electronics. 44. 1275-1280 (2000)

[Publications] T.Arai et al.: "Toward nano-metal buried structure in InP-2Onm wire and InP buried growth of tungsten"Physica E. 7・3-4. 896-901 (2000)

[Publications] T.Arai et al.: "First fabrication of GaInAs/InP buried metal heterojunction bipolar transistor and reduction of base-collector capacitance"Japanese Journal of Applied Physics. 39・6A. L503-L505 (2000)

[Publications] T.Arai et al.: "GaAs buried growth over tungsten stripes using TEG and TMG "Journal of Crystal Growth. 221・1-4. 212-219 (2000)

[Publications] Y.Miyamoto et al.: "Fabrication and transport properties of 5O-nm-wide Au/Cr/GaInAs electrode for electron wave interference device"Applied Surface Science. 159-160. 179-185 (2000)

[Publications] M.Nagase et al.: "Peak width analysis of current-voltage characteristics of triple-barrier resonant tunneling diodes"Japanese Journal of Applied Physics. 39・6A. 3314-3318 (2000)

[Publications] N.Sakai et al.: "Theoretical relation between spatial resolution and efficiency of detection in scanning hot electron microscope"Japanese Journal of Applied Physics. 39・9A. 5256-5260 (2000)

[Publications] B.Y.Zhang et al.: "A vertical hot electron emitter of InGaAs/AlAs heterostructure with wide energy range at high current density"Physica E. 7. 851-854 (2000)

[Publications] N.Machida et al.: "Numerical simulation of hot electron interference in solid-state biprism "25^<th> International Conference on the Physics of Semiconductors . M261. (2000)

[Publications] T.Arai et al.: "CBC reduction in GaInAs/InP buried metal heterojunction bipolar transistor"12^<th> International Conference on Indium Phosphide and Related Materials. TuB1.6. (2000)

[Publications] T.Arai et al.: "GaAs buried growth over tungsten stripes using TEG and TMG"10^<th> International Conference on Metalorganic Vapor Phase Epitaxy. TuA-3. (2000)

[Publications] T.Arai et al.: "InP DHBT with 0.5 um wide emitter along <010> direction toward BM-HBT with narrow emitter"Topical Workshop on Heterostructure Microelectronics. Tue-3. (2000)

[Publications] Y.Miyamoto et al.: "Very shallow n-GaAs ohmic contact with 10 nm-thick GaInAs layer "19^<th> Electronic Materials Symposium. B2. (2000)

[Publications] M.Nagase et al.: "Phase breaking effect appearing in I-V characteristics of double-barrier resonant-tunneling diodes-Theoretical fitting over four orders of magnitude"2000 International Conference on Solid State Devices and Materials. D-6-5. (2000)

[Publications] B.Zhang and K.Furuya: "Characterization of hot electron transmission tunneling through the gap potential in scanning hot electron microscopy"10^<th> International Conference on Solid Films and Surface. Mo-P-167. (2000)

古屋一仁東京工業大学, 大学院・理工学研究科, 教授 (40092572)