2001 Fiscal Year Final Research Report Summary
Development of highly sensitive analysis technique for semiconductor process induced contamination impurities
| Project/Area Number |
11694157
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka University |
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Principal Investigator |
TAKAI Mikio Research Center for Materials Science at Extreme Conditions, Osaka University, Professor, 極限科学研究センター, 教授 (90142306)
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| Co-Investigator(Kenkyū-buntansha) |
YANAGISAWA Junichi Graduate School of Engineering Science, Osaka University, 大学院・基礎工学研究科, 講師 (60239803)
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| Project Period (FY) |
1999 – 2001
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| Keywords | ultra high density integrated circuit / Process contaminated impurity / ion probe / localized analysis with ultra high sensitivity / contamination analysis technique / heavy metal contamination / TOF-RBS analysis technique / FIB-RBS |
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| Research Abstract |
The object of this study was to establish localized analysis techniques with ultra high sensetivity for process contaminated impurities using the same samples for both localized ion probe techniques with ultra high sensitivity being developed in Japan and destructive wafer-scale analysis techniques being used in Germany, which is a key issue for future ultra high density integrated circuit development. The following results were obtained through Japan and German collaboration.
(1) The trade-off between non-destructive localized analysis techniques using ion micro and nano probes with FIB-RBS and TOF-RBS developed in Japan and destructive wafer-scale analysis techniques such as SIMS, VPD-TXRF and VPD-AAS used in Germany was clarified for analysis steps.
(2) Analysis of contaminated impurities from a wafer-level to device levels has been performed to identify each of the impurities and to measure quantatively. Further applications of micro and nano probes to shallow dopat profiling and iastability of SOI MOSFET have been developed.
(3) Minority carrier mapping and diffusion constant mapping in a wafer were successfully conpared with contaminated impurity mapping data using localized ion beam analyses.
(4) Fundamental basis for localized analysis techniques with ultra high sensitivity was established through the collaboration.
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Research Products
(36 results)
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[Publications] Y.K. Park, F. Paszi, T. Takai, C. Lehrer, L. Frey and H. Ryssel: "Comparison of FIB-Induced Physical and Chemical Etching"The Proc. ofIntern. Conf. on Ion Implantation Technology, June 22 -26, 1998, Kyoto, Japan, (IEEE, NJ.,1999). 820-823
Description
「研究成果報告書概要(欧文)」より
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[Publications] Y.K. Park, T. Nagai, M. Takai, C. Lehrer, L, Frey and H. Ryssel: "Microanalysis of FIB induced deposited Pt films using ion microprobe"The Proc. ofIntern. Conf. on Ion Implantation Technology, June 22 -26, 1998, Kyoto, Japan, (IEEE, NJ.,1999). 1137-1139
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[Publications] S. Abo, M. Mizutani, K. Nakayama , T. Takaoka , T. Iwamatsu , Y. Yamaguchi , S. Maegawa , T. Nishimura , A. Kinomura, Y. Horino , and M. Takai: "Suppression of Floating Body Effects in SOI-MOSFET Studied Using Nuclear Microprobes"Nucl. Instr. and Methods. B181. 320-323 (2001)
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「研究成果報告書概要(欧文)」より
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[Publications] S. Abo , K. Nakayama , T. Takaoka , T. Iwamatsu, Y. Yamaguchi, S. Maegawa, T. Nishimura, A. Kinomura and Y. Horino, M. Takai: "Study for Instability of a Partially Depleted SOI MOSFET due to Floating Effect Tested Using High Energy Nuclear Microprobes"the Proc. of the 13th Intern. Conf. on Ion Implantation Technology (IIT 2000), September 17 - 22, 2000, Alpbach, Austria. 285-288
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「研究成果報告書概要(欧文)」より
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[Publications] M. Takai, Y. Arita, S. Abo, T. Iwamatsu, S. Maegawa, H. Sayama, Y. Yamaguchi, M. Inuishi, and T. Nishimura: "Evaluation of Soft Errors in DRAM and SRAM Using Nuclear Microprobe and Neutron Source"the 31st European Solid-State Device Research Conference (ESSDERC 2001), September 11-13, Nurenberg, Germany. 17-24
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