1999 Fiscal Year Annual Research Report

Si-Ge系エピタキシャル成長による超高濃度不純物半導体の形成とその物性

Research Project

Project/Area Number	11875001
Research Institution	Tohoku University
Principal Investigator	室田淳一東北大学, 電気通信研究所, 教授 (70182144)
Co-Investigator(Kenkyū-buntansha)	櫻庭政夫東北大学, 電気通信研究所, 助手 (30271993) 松浦孝東北大学, 電気通信研究所, 助教授 (60181690)
Keywords	ドーピング / ヘテロデバイス / シリコン / ゲルマニウム / リン / ボロン / ラングミュア型 / 原子層
Research Abstract	高性能超微細ヘテロデバイスを実現するために、高品質Si-Ge系ヘテロエピタキシャル薄膜の膜厚や不純物ドーピング濃度の精密な制御と同時に、電極との超低抵抗コンタクトのために超高濃度ドーピングが不可欠である。そこで、高清浄CVDを用いてSiH_4及びGeH_4によりSi-Ge系の低温エピタキシャル成長中にPH_3及びB_2H_6を添加することによるP及びBのIn-situドーピング過程を研究した。その結果、成膜速度、Ge比率、P及びBドーピング濃度と成膜条件との関係がラングミュア型の吸着・反応を仮定することにより説明できることを明らかにした。一方、PH_3によりSi表面上にPを原子層形成し、その上にSiH_4によりSiを形成した原子層ドーピング構造を多重積層した超高濃度PドープSiの形成についても研究した。450℃においてSi表面上に分圧0.26PaのPH_3を供給することにより表面のPは3原子層まで吸着することを平成10年度までに明らかにしており、本年度はSi表面上に形成した原子層P表面上でのSi形成を試みた。その結果、450℃で220Paという高分圧SiH_4により、それぞれ0.5、1、2、3原子層のどのP表面上にもSiが単結晶成長することを明らかにした。さらにPとSiの積層構造を形成することにより、単結晶Siの中へのPの固溶限界を超える平均P濃度が〜4×10^<21>cm^<-3>という超高濃度Pドーピングを実現した。以上のように、Si-Ge系薄膜中へのP及びBのIn-situドーピング特性を明らかにする一方で、原子層ドーピングを応用した超高濃度PドープSi単結晶の形成を可能とした。

Research Products
(12 results)

All Other

All Publications (12 results)

[Publications] S.Kobayashi, et al.: "Segregation and Diffusion of Phosphorus from Doped Si_<1-x>Ge_x Films into Silicon"J. Appl. Phys. 86,10. 5480-5483 (1999)
[Publications] Y.Shimamune, et al.: "Atomic-Layer adsorption of P on Si(100) and Ge(100) by PH_3 Using an Ultraclean Low-Pressure Chemical Vapor Deposition"Appl. Surf. Sci.. (in press). (2000)
[Publications] A.Ichikawa, et al.: "Epitaxial Growth of Si_<1-x-y>Ge_xC_y Film on Si(100) in a SiH_4-GeH_4-CH_3-SiH_3 Reaction"Thin Solid Films. (accepted).
[Publications] S.Kobayashi, et al.: "Diffusion and segregation of Impurities from Doped Si_<1-x>Ge_x Films into Silicon"Thin Solid Films. (accepted).
[Publications] J.Murota, et al.: "Higy Quality Si_<1-x>Ge_x Epitaxial Growth by CVD"Proc. of the Third International Symposium on Defects in Silicon. PV99-1. 189-202 (1999)
[Publications] J.Murota, et al.: "Atomic Order Adsorption and Reaction of CVD Hydride Gases on the Si and Ge Surfaces"Abs. of the 5th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures. P19 (1999)
[Publications] T.Takatsuka, et al.: "Atomic-Order Surface Reaction of CH_3SiH_3 on Ge(100) and Si(100)"Abs. of the 5th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures. P20 (1999)
[Publications] Y.Shimamune, et al.: "Atomic-Layer Adsorption of P on Si(100) and Ge(100) by PH_3 Using an Ultraclean Low-Pressure Chemical Vapor Deposition"Abs. of the 5th International Conference on Atomically Controlled Surfaces, Interfaces and Nanosructures. P37 (1999)
[Publications] J.Murota, et al.: "CDV Si_<1-x>Ge_x Epitaxial Growth and Its Application to MOS Devices"Proc. of the SPIE Conference on Microelectoronic Device Technology III. 3881. 33-45 (1999)
[Publications] T.Kanetsuna, et al.: "Surface Adsorption and Reaction of Chlorine on Impurity Doped Si Using an ECR Plasma"Abs. of 197th Meeting of the Electrochemical Society. (accepted). (2000)
[Publications] Y.Shimamune, et al.: "Atomic-Layer Doping in Si by alternately Supplied PH_3 and SiH_4"Abs. of 2000 Spring Meeting, The European Materials Research Society. (accepted). (2000)
[Publications] T.Noda, et al.: "Doping and Electrical Characteristics of In Situ Heavily B-Doped Si_<1-x-y>Ge_xC_y Films Epitaxially Grown Using Ultraclean LPCVD"Abs. of 2000 Spring Meeting, The European Materials Research Society. (accepted). (2000)

1999 Fiscal Year Annual Research Report

Si-Ge系エピタキシャル成長による超高濃度不純物半導体の形成とその物性

Principal Investigator

室田 淳一 東北大学, 電気通信研究所, 教授 (70182144)

Research Products

[Publications] S.Kobayashi, et al.: "Segregation and Diffusion of Phosphorus from Doped Si_<1-x>Ge_x Films into Silicon"J. Appl. Phys. 86,10. 5480-5483 (1999)

[Publications] Y.Shimamune, et al.: "Atomic-Layer adsorption of P on Si(100) and Ge(100) by PH_3 Using an Ultraclean Low-Pressure Chemical Vapor Deposition"Appl. Surf. Sci.. (in press). (2000)

[Publications] A.Ichikawa, et al.: "Epitaxial Growth of Si_<1-x-y>Ge_xC_y Film on Si(100) in a SiH_4-GeH_4-CH_3-SiH_3 Reaction"Thin Solid Films. (accepted).

[Publications] S.Kobayashi, et al.: "Diffusion and segregation of Impurities from Doped Si_<1-x>Ge_x Films into Silicon"Thin Solid Films. (accepted).

[Publications] J.Murota, et al.: "Higy Quality Si_<1-x>Ge_x Epitaxial Growth by CVD"Proc. of the Third International Symposium on Defects in Silicon. PV99-1. 189-202 (1999)

[Publications] J.Murota, et al.: "Atomic Order Adsorption and Reaction of CVD Hydride Gases on the Si and Ge Surfaces"Abs. of the 5th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures. P19 (1999)

[Publications] T.Takatsuka, et al.: "Atomic-Order Surface Reaction of CH_3SiH_3 on Ge(100) and Si(100)"Abs. of the 5th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures. P20 (1999)

[Publications] Y.Shimamune, et al.: "Atomic-Layer Adsorption of P on Si(100) and Ge(100) by PH_3 Using an Ultraclean Low-Pressure Chemical Vapor Deposition"Abs. of the 5th International Conference on Atomically Controlled Surfaces, Interfaces and Nanosructures. P37 (1999)

[Publications] J.Murota, et al.: "CDV Si_<1-x>Ge_x Epitaxial Growth and Its Application to MOS Devices"Proc. of the SPIE Conference on Microelectoronic Device Technology III. 3881. 33-45 (1999)

[Publications] T.Kanetsuna, et al.: "Surface Adsorption and Reaction of Chlorine on Impurity Doped Si Using an ECR Plasma"Abs. of 197th Meeting of the Electrochemical Society. (accepted). (2000)

[Publications] Y.Shimamune, et al.: "Atomic-Layer Doping in Si by alternately Supplied PH_3 and SiH_4"Abs. of 2000 Spring Meeting, The European Materials Research Society. (accepted). (2000)

[Publications] T.Noda, et al.: "Doping and Electrical Characteristics of In Situ Heavily B-Doped Si_<1-x-y>Ge_xC_y Films Epitaxially Grown Using Ultraclean LPCVD"Abs. of 2000 Spring Meeting, The European Materials Research Society. (accepted). (2000)

室田淳一東北大学, 電気通信研究所, 教授 (70182144)