1999 Fiscal Year Annual Research Report

ダイヤモンド薄膜結晶の電子帯構造と負性電子親和力

Research Project

Project/Area Number	11875007
Research Institution	Kobe University
Principal Investigator	西野種夫神戸大学, 工学部, 教授 (60029452)
Co-Investigator(Kenkyū-buntansha)	喜多隆神戸大学, 工学部, 助手 (10221186)
Keywords	ダイヤモンド / NEA / electronic structure
Research Abstract	ダイヤモンド薄膜結晶の電子帯構造とNEAの関係すなわち電子親和力を評価するためこれまでに構築してきた真空紫外分光技術を駆使してダイヤモンド薄膜結晶の電子帯構造を詳細に調べた。特に、我々のグループにおいて独自に開発された電子顕微鏡(SEM)と一体化した局所領域電子線変調反射分光システムを用いて基礎吸収端光学遷移のみならずブリュアンゾーン全域わたって高エネルギーバンド間遷移を測定して、バルクダイヤモンドとダイヤモンド薄膜ける違いや不純物ドーピングによる影響を詳細に調べ上げた。その結果(1)SEMに組み込んだ局所領域変調反射分光システムを用いて基礎呼吸端(5.5eV)からの信号を観測するのに初めて成功し、 (2)ダイヤモンド薄膜からのフォトエミッション分光によるエッジエミッション観測を行った。電子線変調反射信号とエッジエミッションスペクトルの比較から不純物によるエキシトンの束縛エネルギーやマルチフォノン放射を伴ったエネルギー緩和特性などに関して詳細なデータを得ることが出来た。

Research Products
(12 results)

All Other

All Publications (12 results)

[Publications] K.Yamashita: "Carrier-Relaxation Process in Time-Resolved Up-Converted Photoluminescence at Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P/GaAs Heterointerface"Jpn.J.Appl.Phys.. Vol.38,No.2B. 1001-1003 (1999)
[Publications] T.Kita: "Dynamic Process of Anti-Stokes Photoluminescence at a Long-Range Ordered Ga^<0.5>In_<0.5>P/GaAs Heterostructure"Phys.Rev.B. Vol.59,No.23. 15358-15362 (1999)
[Publications] T.Kita: "Self-Organized Process of InAs-Quantum Dots Monitored by Reflectance-Difference Spectroscopy"Inst.Phys.Conf.Ser.. No.162,Chapter 9. 457-462 (1999)
[Publications] K.Yamashita: "Linear Electrooptic Effect in Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P"J.Appl.Phys.. Vol.86,No.6. 3140-3143 (1999)
[Publications] T.Kita: "Energy Relaxation by Multiphonon Processes in Partially Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P"Proc.11th International Conference on Indium Phosphide and Related Materials,Davos. 159-162 (1999)
[Publications] K.Yamashita: "Relaxation Process of Photoexcited Carriers in GaAs/InAs/GaAs Quantum Structures"Proc.18th Electronic Materials Symposium,Kii-Shirahama. 39-40 (1999)
[Publications] T.Kita: "Reflectance-Difference Spectroscopy of Two-Dimensional InAs duing Stranski-Krastanov Formation of Quantm Dots"Proc.18th Electronic Materials Symposium,Kii-Shirahama. 141-142 (1999)
[Publications] T.Kita: "Dynamic Process of Two-Dimensional InAs Growth in Stranski-Krastanov Mode"Physica E. (in press). (2000)
[Publications] T.Kita: "Time-Resolved Observation of Anti-Stokes Photoluminescence at Ordered Ga_<0.5>In_<0.5>P and GaAs Interfaces"Journal of Luminescence. (in press). (2000)
[Publications] K.Yamashita: "Initial Stages of InAs-Quantum Dots Formation Studies by Reflectance-Difference Spectroscopy and Photoluminescence"Inst.Phys.Conf.Ser.. (in press). (2000)
[Publications] T.Kita: "Self-Assembled Growth of InAs-Quantum Dots and Postgrowth Behavior Studied by Reflectance-Difference Spectroscopy"Applied Surface Science. (in press). (2000)
[Publications] A.Shimizu: "Structual Evolution and Valence-Electron State Change During Ultra Thin Silicon Oxide Growth"Applied Surface Science. (in press). (2000)

1999 Fiscal Year Annual Research Report

ダイヤモンド薄膜結晶の電子帯構造と負性電子親和力

Principal Investigator

西野 種夫 神戸大学, 工学部, 教授 (60029452)

Research Products

[Publications] K.Yamashita: "Carrier-Relaxation Process in Time-Resolved Up-Converted Photoluminescence at Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P/GaAs Heterointerface"Jpn.J.Appl.Phys.. Vol.38,No.2B. 1001-1003 (1999)

[Publications] T.Kita: "Dynamic Process of Anti-Stokes Photoluminescence at a Long-Range Ordered Ga^<0.5>In_<0.5>P/GaAs Heterostructure"Phys.Rev.B. Vol.59,No.23. 15358-15362 (1999)

[Publications] T.Kita: "Self-Organized Process of InAs-Quantum Dots Monitored by Reflectance-Difference Spectroscopy"Inst.Phys.Conf.Ser.. No.162,Chapter 9. 457-462 (1999)

[Publications] K.Yamashita: "Linear Electrooptic Effect in Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P"J.Appl.Phys.. Vol.86,No.6. 3140-3143 (1999)

[Publications] T.Kita: "Energy Relaxation by Multiphonon Processes in Partially Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P"Proc.11th International Conference on Indium Phosphide and Related Materials,Davos. 159-162 (1999)

[Publications] K.Yamashita: "Relaxation Process of Photoexcited Carriers in GaAs/InAs/GaAs Quantum Structures"Proc.18th Electronic Materials Symposium,Kii-Shirahama. 39-40 (1999)

[Publications] T.Kita: "Reflectance-Difference Spectroscopy of Two-Dimensional InAs duing Stranski-Krastanov Formation of Quantm Dots"Proc.18th Electronic Materials Symposium,Kii-Shirahama. 141-142 (1999)

[Publications] T.Kita: "Dynamic Process of Two-Dimensional InAs Growth in Stranski-Krastanov Mode"Physica E. (in press). (2000)

[Publications] T.Kita: "Time-Resolved Observation of Anti-Stokes Photoluminescence at Ordered Ga_<0.5>In_<0.5>P and GaAs Interfaces"Journal of Luminescence. (in press). (2000)

[Publications] K.Yamashita: "Initial Stages of InAs-Quantum Dots Formation Studies by Reflectance-Difference Spectroscopy and Photoluminescence"Inst.Phys.Conf.Ser.. (in press). (2000)

[Publications] T.Kita: "Self-Assembled Growth of InAs-Quantum Dots and Postgrowth Behavior Studied by Reflectance-Difference Spectroscopy"Applied Surface Science. (in press). (2000)

[Publications] A.Shimizu: "Structual Evolution and Valence-Electron State Change During Ultra Thin Silicon Oxide Growth"Applied Surface Science. (in press). (2000)

西野種夫神戸大学, 工学部, 教授 (60029452)