2001 Fiscal Year Annual Research Report

第一原理計算によるワイドギャップ半導体の価電子制御と物質設計

Research Project

Project/Area Number	12042246
Research Institution	Osaka University
Principal Investigator	吉田博大阪大学, 産業科学研究所, 教授 (30133929)
Co-Investigator(Kenkyū-buntansha)	白井光雲大阪大学, 産業科学研究所, 助手 (60178647) 播磨尚朝大阪大学, 産業科学研究所, 助教授 (50211496)
Keywords	透明強磁性半導体 / マテリアルデザイン / 第一原理計算 / スピングラス / スピンFET / ハーフメタル / 磁性半導体 / ZnO ZnS GaN
Research Abstract	第一原理計算に基づいて、ZnO, ZnSやGaN, AINなどの透明なワイドギャップ半導体に遷移金属を高濃度にドープした系について透明強磁性体のマテリアルデザインをおこない、II-VI族半導体ではV, Crが、またIII-V族半導体ではV, Cr, Mnが強磁性状態で、しかも、一方のスピン状態だけにフェルミ面があり片方のスピン状態が絶縁体であるハーフメタリックな系を予言した。実際に実験グループが新物質の創製を行いZnO : V, ZnO : Co, GaN : Mnで強磁性を確認し、第一原理計算によるマテリアルデザインの有効性を検証した。第一原理計算によるマテリアルデザインの結果に立脚して、スピン・FETやスピン・トランジスタなどのプロトタイプの新機能スピンデバイスをデザインした。

Research Products
(18 results)

All Other

All Publications (18 results)

[Publications] K.Sato, H.Katayama-Yoshida: "Stabilization of Ferromagnetic States by Electron Doping in Fe-, Co-or Ni-Doped ZnO"Jpn. J. Appl. Phys.. 40. L334-L336 (2001)
[Publications] H.Katayama-Yoshida, T.Nishimatsu, T.Yamamoto, N.Orita: "Codoping Method for the Fabrication of Low-resistivity wide Band-gap Semiconductors in p-type GaN, p-type AIN and n-type Diamond : Prediction vs. Experiment"J. Physics Condens. Matter. 13. 8901-8914 (2001)
[Publications] K.Sato, H.Katayama-Yoshida: "Material Design of GaN-based Ferromagnetic Diluted Magnetic Semiconductors"Jpn. J. Appl. Phys.. 40. L485-L487 (2001)
[Publications] H.Katayama-Yoshida, R.Kato, T.Yamamoto: "New Valence Control and Spin Control Method in GaN and AIN by Codoping and Transition Atom Doping"J. Crystal Growth. 231. 428-436 (2001)
[Publications] K.Sato, H.Katayama-Yoshida: "Hyperfine Interactions and Magnetism of 3d Transition-Metal-Impurities in II-VI and III-V Compound-Based Diluted Magnetic Semiconductors"(Hyperfine Interactions) at HFI-12 (USA). (In press).
[Publications] K.Sato, H.Katayama-Yoshida: "Ferromagnetism in a transition metal atom doped ZnO"Physica E. 10. 251-255 (2001)
[Publications] T.Yamamoto, H.Katayama-Yoshida: "Physics and control of valence states in ZnO by codoping method"Physica B. 302-303. 155-162 (2001)
[Publications] K.Matsushita, H.Harima, A.Yanase, H.Katayama-Yoshida: "Prediction of ferromagnetic (Zn, Mn)Se superlattice"Physica E. 10. 247-250 (2001)
[Publications] T.Kawasaki, H.Katayama-Yoshida: "Valence control method of co-doping for the fabrication of metallic silicon from the first-principles calculation"Physica B. 302-303. 163-165 (2001)
[Publications] T.Nishimatsu, H.Katayama-Yoshida, N.Orita: "Theoretical study of hydrogen-related complexes in diamond for low-resistive n-type diamond semiconductor"Physica B. 302-303. 149-154 (2001)
[Publications] K.Sato, H.Katayama-Yoshida: "Materials Design of Transparent and Half-Metallic Ferromagnets in V-or Cr-doped ZnS, ZnSe and ZnTe without P-or N-type Doping Treatment"Jpn. J. Appl. Phys.. 40. L651-L653 (2001)
[Publications] K.Sato, H.Katayama-Yoshida: "Theoretical prediction for transparent ferromagnets with transition metal atom doped ZnO"Proc. 25^<th> Int. Conf. Phys. Semicond., Osaka 2000 (Springer Proceedings in Physics, 87, Eds. N.Miura and T.Ando). 236-237 (2001)
[Publications] K.Matsushita, H.Harima, A.Yanase, H.Katayama-Yoshida: "Electronic Structure and Magnetic Properties of (Zn, Mn)Se With Carrier Doping Studies by FLAPW Method"Proc. 25^<th> Int. Conf. Phys. Semicond., Osaka 2000 (Springer Proceedings in Physics, 87, Eds. N.Miura and T.Ando). 264-265 (2001)
[Publications] T.Yamamoto, H.Katayama-Yoshida: "Materials design for the fabrication of p-type ZnO by codoping method"Proc. 25^<th> Int. Conf. Phys. Semicond., Osaka 2000 (Springer Proceedings in Physics, 87, Eds. N.Miura and T.Ando). 1409-1410 (2001)
[Publications] K.Sato, H.Katayama-Yoshida: "Material and device design with ZnO-based diluted magnetic semiconductors"Mat. Res. Soc. Symp. Proc.. Vol.666. F4.6.1-F4.6.10 (2002)
[Publications] K.Sato, H.Katayama-Yoshida: "Ab intio study on the magnetism in ZnO-, ZnS-, ZnSe-, and ZnTe-based diluted magnetic semiconductors"Phys. sat. sol. (b). (in press). (2002)
[Publications] 佐藤和則, 吉田博: "解説:第一原理計算による新機能希薄磁性半導体のマテリアルデザイン"固体物理. 36. 377-390 (2001)
[Publications] 吉田博, 佐藤和則, 山本哲也: "第一原理計算による新機能性半導体のマテリアルデザイン -予言と実験の比較-"応用物理学会誌. Vol.70 No.8. 969-975 (2001)

2001 Fiscal Year Annual Research Report

第一原理計算によるワイドギャップ半導体の価電子制御と物質設計

Principal Investigator

吉田 博 大阪大学, 産業科学研究所, 教授 (30133929)

Research Products

[Publications] K.Sato, H.Katayama-Yoshida: "Stabilization of Ferromagnetic States by Electron Doping in Fe-, Co-or Ni-Doped ZnO"Jpn. J. Appl. Phys.. 40. L334-L336 (2001)

[Publications] H.Katayama-Yoshida, T.Nishimatsu, T.Yamamoto, N.Orita: "Codoping Method for the Fabrication of Low-resistivity wide Band-gap Semiconductors in p-type GaN, p-type AIN and n-type Diamond : Prediction vs. Experiment"J. Physics Condens. Matter. 13. 8901-8914 (2001)

[Publications] K.Sato, H.Katayama-Yoshida: "Material Design of GaN-based Ferromagnetic Diluted Magnetic Semiconductors"Jpn. J. Appl. Phys.. 40. L485-L487 (2001)

[Publications] H.Katayama-Yoshida, R.Kato, T.Yamamoto: "New Valence Control and Spin Control Method in GaN and AIN by Codoping and Transition Atom Doping"J. Crystal Growth. 231. 428-436 (2001)

[Publications] K.Sato, H.Katayama-Yoshida: "Hyperfine Interactions and Magnetism of 3d Transition-Metal-Impurities in II-VI and III-V Compound-Based Diluted Magnetic Semiconductors"(Hyperfine Interactions) at HFI-12 (USA). (In press).

[Publications] K.Sato, H.Katayama-Yoshida: "Ferromagnetism in a transition metal atom doped ZnO"Physica E. 10. 251-255 (2001)

[Publications] T.Yamamoto, H.Katayama-Yoshida: "Physics and control of valence states in ZnO by codoping method"Physica B. 302-303. 155-162 (2001)

[Publications] K.Matsushita, H.Harima, A.Yanase, H.Katayama-Yoshida: "Prediction of ferromagnetic (Zn, Mn)Se superlattice"Physica E. 10. 247-250 (2001)

[Publications] T.Kawasaki, H.Katayama-Yoshida: "Valence control method of co-doping for the fabrication of metallic silicon from the first-principles calculation"Physica B. 302-303. 163-165 (2001)

[Publications] T.Nishimatsu, H.Katayama-Yoshida, N.Orita: "Theoretical study of hydrogen-related complexes in diamond for low-resistive n-type diamond semiconductor"Physica B. 302-303. 149-154 (2001)

[Publications] K.Sato, H.Katayama-Yoshida: "Materials Design of Transparent and Half-Metallic Ferromagnets in V-or Cr-doped ZnS, ZnSe and ZnTe without P-or N-type Doping Treatment"Jpn. J. Appl. Phys.. 40. L651-L653 (2001)

[Publications] K.Sato, H.Katayama-Yoshida: "Theoretical prediction for transparent ferromagnets with transition metal atom doped ZnO"Proc. 25^<th> Int. Conf. Phys. Semicond., Osaka 2000 (Springer Proceedings in Physics, 87, Eds. N.Miura and T.Ando). 236-237 (2001)

[Publications] T.Yamamoto, H.Katayama-Yoshida: "Materials design for the fabrication of p-type ZnO by codoping method"Proc. 25^<th> Int. Conf. Phys. Semicond., Osaka 2000 (Springer Proceedings in Physics, 87, Eds. N.Miura and T.Ando). 1409-1410 (2001)

[Publications] K.Sato, H.Katayama-Yoshida: "Material and device design with ZnO-based diluted magnetic semiconductors"Mat. Res. Soc. Symp. Proc.. Vol.666. F4.6.1-F4.6.10 (2002)

[Publications] K.Sato, H.Katayama-Yoshida: "Ab intio study on the magnetism in ZnO-, ZnS-, ZnSe-, and ZnTe-based diluted magnetic semiconductors"Phys. sat. sol. (b). (in press). (2002)

[Publications] 佐藤和則, 吉田博: "解説:第一原理計算による新機能希薄磁性半導体のマテリアルデザイン"固体物理. 36. 377-390 (2001)

[Publications] 吉田博, 佐藤和則, 山本哲也: "第一原理計算による新機能性半導体のマテリアルデザイン -予言と実験の比較-"応用物理学会誌. Vol.70 No.8. 969-975 (2001)

吉田博大阪大学, 産業科学研究所, 教授 (30133929)