2002 Fiscal Year Annual Research Report

MOCVD法による高品質強誘電体薄膜の作製と物性評価

Research Project

Project/Area Number	12134207
Research Institution	Himeji Institute of Technology
Principal Investigator	清水勝姫路工業大学, 工学研究科, 助教授 (30154305)
Co-Investigator(Kenkyū-buntansha)	安達正利富山県立大学, 工学部, 教授 (90026287) 藤沢浩訓姫路工業大学, 工学研究科, 助手 (30285340) 丹生博彦姫路工業大学, 工学研究科, 教授 (40047618)
Keywords	MOCVD / 高品質強誘電体薄膜 / 自己集合 / ナノ構造 / 強誘電性 / 三次元キャパシタ / 極薄膜 / 圧電応答顕微鏡
Research Abstract	当該年度は,Pb(Zr, Ti)O_3(PZT)薄膜の低温成長,MOCVD法のみによる電極/強誘電体/電極キャパシタの低温形成,PZT極薄膜及びナノ構造の作製・評価に取り組み,下記の成果が得られた. 1.PbTiO_3をシード層として用いた二段階成長法によるPZT薄膜の低温形成において,シード層の膜厚,結晶性などを最適化した結果,Pt/SiO_2/Si基板上に380℃という低温で強誘電特性を示すPZT薄膜を得ることに成功した. 2.新規Ir原料(Ir(EtCp)(cod))を用いたMOCVD法によるIr電極薄膜の低温形成技術と,上記のPZT薄膜の低温形成技術を組み合わせることにより,三次元Ir/PZT/Irキャパシタを全てMOCVD法により400℃以下で形成することに成功した.Ir及びPZT薄膜とも80%以上の良好な段差被覆性を示すとともに,平面構造キャパシタとほぼ同等の電気的特性が得られた. 3.原子レベルで平坦化したSrTiO_3単結晶基板上において,作製条件の最適化により,非常に平坦なテラスと高さ数nmのステップを有するSrRuO_3下部電極を得ることができた.このSrRuO_3/SrTiO_3基板上では,再現性よく強誘電性を示すPZT極薄膜(膜厚15-30nm)が得られた. 4.Pt/SiO_2/Si基板上に自己集合現象を利用して390℃で作製したPbTiO_3ナノ構造では,最小で幅38nm,高さ1.7nmのPbTiO_3島が強誘電性を示すことが明らかとなった.また,自己集合島の方位やサイズを制御するために,結晶方位の異なるPt/SrTiO_3基板上にPbTiO_3ナノ構造を作製したところ,結晶方位を反映した特徴的な形状を持つPbTiO_3島が得られた. 5.圧電応答顕微鏡を用いたエピタキシャルPZT薄膜の分極反転過程の観察により,分域壁の横方向の移動速度を求めることができた.

Research Products
(14 results)

All Other

All Publications (14 results)

[Publications] M.Shimizu: "Growth of Ferroelectric PbZr_xTi_<1-x>O_3 Thin Films by Metalorganic Chemical Vapor Deposition"Journal of Crystal Growth. 237-239(P1). 448-454 (2002)
[Publications] H.Fujisawa: "Observations of Initial Growth Stage of Epitaxial Pb(Zr, Ti)O_3 Thin Films on SrTiO_3(100) Substrate by MOCVD"Journal of Crystal Growth. 237-239(P1). 459-463 (2002)
[Publications] M.Shimizu: "Low Temperature Growth of Pb(Zr, Ti)O_3 Thin Films by Two Step MOCVD Using Seeds"Ferroelectrics. 271. 217-222 (2002)
[Publications] H.Fujisawa: "Investigation of Polarization Switching Processes in Pb(Zr, Ti)O_3 Capacitors Using Piezoresponse Imaging"Ferroelectrics. 269. 21-26 (2002)
[Publications] H.Nonomura: "Epitaxial Growth and Ferroelectric Properties of the 20-nm-thick Pb(Zr, Ti)O_3 Film on SrTiO_3(100) with an Atomically Flat Surface by Metalorganic Chemical Vapor Deposition"Japanese Jouranl of Applied Physics. 41. 6682-6685 (2002)
[Publications] M.Shimizu: "Crystalline and Ferroelectric Properties of Low-temperature Grown Pb(Zr, Ti)O_3 Thin Films by Metalorganic Chemical Vapor Deposition"Japanese Jouranl of Applied Physics. 41. 6686-6689 (2002)
[Publications] H.Fujisawa: "Domain Motions in Epitaxial Pb(Zr, Ti)O_3 Thin Film Capacitors by Piezoresponse Scanning Force Microscopy"Proceedings of the 2002 13th IEEE International Symposium on Applications of Ferroelectrics. (印刷中).
[Publications] M.Shimizu: "Characterization of PZT Capacitors with Ir Electrodes Prepared Solely by Low-Temperature MOCVD"Journal of the Korean Physical Society. (印刷中). (2003)
[Publications] H.Fujisawa: "Characterization of MOCVD-TiO_2 and ZrO_2 Insulating Layers in MFIS Structures by DLTS and ICTS methods"Journal of the Korean Physical Society. (印刷中). (2003)
[Publications] M.Shimizu: "Ferroelectric Properties of Pb(Zr, Ti)O_3 Thin Films Prepared by Low-Temperature MOCVD Using PbTiO_3 Seeds"Journal of European Ceramic Society. (印刷中). (2003)
[Publications] H.Fujisawa: "Ferroelectricity of the 1.7nm-high and 38nm-wide self-assembled PbTiO_3 island"Journal of European Ceramic Society. (印刷中). (2003)
[Publications] H.Nonomura: "Ferroelectric Properties of 15-20nm-Thick PZT Ultra-Thin Films Prepared By MOCVD"Materials Research Society Symposium Proceedings. 748(印刷中). (2003)
[Publications] H.Fujisawa: "Investigation of Domain Wall Velocity and Nucleation Rate in Polarization Switching of Epitaxial Pb(Zr, Ti)O_3 Thin Films Using Piezoresponse Scanning Force Microscopy"Materials Research Society Symposium Proceedings. 748(印刷中). (2003)
[Publications] 藤沢浩訓: "圧電応答顕微鏡による強誘電体Pb(Zr, Ti)O_3薄膜の分極反転過程の観察"材料. 51. 975-978 (2002)

2002 Fiscal Year Annual Research Report

MOCVD法による高品質強誘電体薄膜の作製と物性評価

Principal Investigator

清水 勝 姫路工業大学, 工学研究科, 助教授 (30154305)

Research Products

[Publications] M.Shimizu: "Growth of Ferroelectric PbZr_xTi_<1-x>O_3 Thin Films by Metalorganic Chemical Vapor Deposition"Journal of Crystal Growth. 237-239(P1). 448-454 (2002)

[Publications] H.Fujisawa: "Observations of Initial Growth Stage of Epitaxial Pb(Zr, Ti)O_3 Thin Films on SrTiO_3(100) Substrate by MOCVD"Journal of Crystal Growth. 237-239(P1). 459-463 (2002)

[Publications] M.Shimizu: "Low Temperature Growth of Pb(Zr, Ti)O_3 Thin Films by Two Step MOCVD Using Seeds"Ferroelectrics. 271. 217-222 (2002)

[Publications] H.Fujisawa: "Investigation of Polarization Switching Processes in Pb(Zr, Ti)O_3 Capacitors Using Piezoresponse Imaging"Ferroelectrics. 269. 21-26 (2002)

[Publications] H.Nonomura: "Epitaxial Growth and Ferroelectric Properties of the 20-nm-thick Pb(Zr, Ti)O_3 Film on SrTiO_3(100) with an Atomically Flat Surface by Metalorganic Chemical Vapor Deposition"Japanese Jouranl of Applied Physics. 41. 6682-6685 (2002)

[Publications] M.Shimizu: "Crystalline and Ferroelectric Properties of Low-temperature Grown Pb(Zr, Ti)O_3 Thin Films by Metalorganic Chemical Vapor Deposition"Japanese Jouranl of Applied Physics. 41. 6686-6689 (2002)

[Publications] H.Fujisawa: "Domain Motions in Epitaxial Pb(Zr, Ti)O_3 Thin Film Capacitors by Piezoresponse Scanning Force Microscopy"Proceedings of the 2002 13th IEEE International Symposium on Applications of Ferroelectrics. (印刷中).

[Publications] M.Shimizu: "Characterization of PZT Capacitors with Ir Electrodes Prepared Solely by Low-Temperature MOCVD"Journal of the Korean Physical Society. (印刷中). (2003)

[Publications] H.Fujisawa: "Characterization of MOCVD-TiO_2 and ZrO_2 Insulating Layers in MFIS Structures by DLTS and ICTS methods"Journal of the Korean Physical Society. (印刷中). (2003)

[Publications] M.Shimizu: "Ferroelectric Properties of Pb(Zr, Ti)O_3 Thin Films Prepared by Low-Temperature MOCVD Using PbTiO_3 Seeds"Journal of European Ceramic Society. (印刷中). (2003)

[Publications] H.Fujisawa: "Ferroelectricity of the 1.7nm-high and 38nm-wide self-assembled PbTiO_3 island"Journal of European Ceramic Society. (印刷中). (2003)

[Publications] H.Nonomura: "Ferroelectric Properties of 15-20nm-Thick PZT Ultra-Thin Films Prepared By MOCVD"Materials Research Society Symposium Proceedings. 748(印刷中). (2003)

[Publications] H.Fujisawa: "Investigation of Domain Wall Velocity and Nucleation Rate in Polarization Switching of Epitaxial Pb(Zr, Ti)O_3 Thin Films Using Piezoresponse Scanning Force Microscopy"Materials Research Society Symposium Proceedings. 748(印刷中). (2003)

[Publications] 藤沢 浩訓: "圧電応答顕微鏡による強誘電体Pb(Zr, Ti)O_3薄膜の分極反転過程の観察"材料. 51. 975-978 (2002)

清水勝姫路工業大学, 工学研究科, 助教授 (30154305)

[Publications] 藤沢浩訓: "圧電応答顕微鏡による強誘電体Pb(Zr, Ti)O_3薄膜の分極反転過程の観察"材料. 51. 975-978 (2002)