| Project/Area Number |
12305021
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | CHUBU UNIVERSITY (2001-2002)
Nagoya Institute of Technology (2000) |
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Principal Investigator |
UMENO Masayoshi Chubu University, Engineering, Professor, 工学部, 教授 (90023077)
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| Co-Investigator(Kenkyū-buntansha) |
EGAWA Takashi Nagoya Institute of Technology, Res. Center for Micro Structure Devices, Professor, 極微構造デバイス研究センター, 教授 (00232934)
IDO Toshiyuki Chubu University, Engineering, Professor, 工学部, 教授 (60023256)
WAKITA Kouichi Chubu University, Engineering, Professor, 工学部, 教授 (20301640)
ISHIKAWA Hiroyasu Nagoya Institute of Technology, Res. Center for Micro Structure Devices, Assistant, 極微構造デバイス研究センター, 助手 (20303696)
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| Project Period (FY) |
2000 – 2002
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| Keywords | Heteroepitaxy / GaAs on Si substrate / GaN on Si substrate / GaAs / Si laser / GaAs / Si tandem solar cell / GaN / Si light emitting device / GaN / Si electronic device / GaN / Si MESFET |
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| Research Abstract |
The research results to date on heteroepitaxial GaAs and GaN semiconductors based on Si substrates have been compiled. In addition, research development on silicon based InP and device application of light emitting diode, laser, solar cell, field-effect transistor(HEMT), together with their merit and demerit for industrial application is discussed.
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