2001 Fiscal Year Final Research Report Summary
Development of silica glass for 157nm photolithography
| Project/Area Number |
12355025
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | Toyota Technological Institute |
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Principal Investigator |
IKUSHIMA Akira J. Graduated School of Engineering, Toyota Technological Institute, Professor, 大学院・工学研究科, 教授 (10029415)
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| Co-Investigator(Kenkyū-buntansha) |
SHIMODAIRA Akinori Semiconductor Devices and Material Division, Asahi Glass Co. Ltd., Researcher, 材料解析グループ, 主任研究員
MATSUMOTO Kiyoshi Semiconductor Devices and Material Division, Asahi Glass Co. Ltd., Group Leader, 材料解析グループ, グループリーダー
SAITO Kazuya Graduated School of Engineering, Toyota Technological Institute, Associate Professor, 大学院・工学研究科, 助教授 (20278394)
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| Project Period (FY) |
2000 – 2001
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| Keywords | Glass materials / 2nd-order optical nonlinearity / Poling / Optical wave guide / Optical fiber / Photonics |
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| Research Abstract |
The purpose of this research project is to develop silica glass for 157 nm photolithography, which is a promising process for ULSI in the next generation. The results are summarized as follows:
(1) Remarkable advances have been achieved in the understanding of the absorption edge of silica glass. This knowledge is very useful to develop silica glass with wide transparent VUV region.
(2) Effects of F on the transparency in VUV region have been revealed.
(3) Inner transmittance at 157 nm could be increased over 93%.
(4) The effect of F2 laser irradiation on increasing temperature and hence decreasing transparency can be estimated from a model calculation.
(5) A method for measuring accurate VUV absorption edge in silica glass has been established.
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