| Co-Investigator(Kenkyū-buntansha) |
GHANASHEV Ivan 芝浦メカトロニクス株式会社, 主査
ISHIJIMA Tatsuo Nagoya University, Graduate School of Engineering, Research Associate, 工学研究科, 助手 (00324450)
TOYODA Hirotaka Nagoya University, Graduate School of Engineering, Associate Professor, 工学研究科, 助教授 (70207653)
IVAN Ghanashev Shibaura Mechatronics Corporation Senior Specialist
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| Research Abstract |
To date, a capacitivery coupled plasma at 13.56 MHz has been used in plasma-assiste manufacturing of liquid crystal display (LCD) devices. However, this type of plasma source is facing a difficulty in large-area processing due to its low plasma density and non-uniformity. In order to overcome these problems, we use a new source called surface wave plasma (SWP) which is produced by microwave discharge. This project aims to make the plasma high-density and large-area, and to develop large-area LCD process for formation of poly-silicon films on a cold substrate.
The results obtained are summarized below.
(1) <Optimization of discharge antenna>____ : Stable microwave plasma without density jump was obtained by introducing a periodic structure at the interface at the plasma interface.
(2) <Control of electron energy distribution Junction (EEDF)>____ : The EEDF measurement and fluid mode analysis revealed that the electron temperature can be controlled by selecting an additive rare gas species (He, Ne, Ar, Kr, Xe).
(3) <Large-area plasma production>____ : A meter-size (1 m x 0.3 m) plasma was produced by microwave discharge, where some problems were made clear on mechanical strength of window and plasma in-homogeneity.
(4) <Oxygen plasma for gate oxidation>____ : Behavior of oxygen radical in SWP was investigated for different O_2 percentage in argon to realize ultra-thin gate SiO_2 layer by low-temperature plasma oxidation.
(5) <Low temperature growth of poly-Si films>____0 : The SWP with SiH_4 highly diluted by H_2 enabled poly-Si film formation at 400℃, which is expected to give high mobility TFTs.
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