2002 Fiscal Year Annual Research Report

Si-Ge-C-N系原子層積層による共鳴トンネルダイオードの製作

Research Project

Project/Area Number	12450001
Research Institution	Tohoku University
Principal Investigator	櫻庭政夫東北大学, 電気通信研究所, 助教授 (30271993)
Co-Investigator(Kenkyū-buntansha)	目黒敏靖東北大学, 電気通信研究所, 助手 (50182150) 室田淳一東北大学, 電気通信研究所, 教授 (70182144)
Keywords	Si / Ge / C / N / 原子層 / 共鳴トンネルダイオード / ヘテロ構造 / CVD
Research Abstract	本基盤研究では、Si-Ge-C系原子層CVD法と原子層窒化法を組み合わせ、Si中に任意の周期でGe,C,Nの各原子層を配列して共鳴トンネルダイオードに適用することにより、通常の不規則混晶材料では見られない新規物性の発現を制御・観測することを目的とする。本年度はその最終年度として、Si-N系及びSi-Ge-C系の原子層ヘテロ構造を適用した共鳴トンネルダイオードを製作する研究を進めた。具体的には、N原子層ドープSiにおけるN原子の結合エネルギー測定の結果、N原子層形成Si(100)表面に成長したSi薄膜の結晶性劣化は、Si_3N_4構造の形成と関連していることを見いだした。そして、2層NドーピングにおけるSiスペーサ層の薄層化及び高N密度化において、Si原子がN原子層を被覆してSi_3N_4構造形成を抑制することが高N原子密度化のために重要であるという指針を得た。また、Si/SiGe/Si(100)ヘテロ構造における熱処理時のSiとGeの相互拡散はGe比率が高いほど進行が早く、ヘテロ界面への面密度7x10^<13>cm^<-2>のC原子層ドーピングによりSi/Ge(100)ヘテロ界面での相互拡散は大きく抑制されることを明らかにし、原子オーダで急峻なヘテロ界面形成への指針を得た。さらに、Si-Ge系二重Si障壁共鳴トンネルダイオードの試作において、Si障壁への多層N原子層ドーピングを行なうことによりトンネル電流密度が著しく抑制される現象を見いだし、障壁の電子帯構造変調の可能性を示唆する結果を得た。以上のように、Si-N系及びSi-Ge-C系原子層積層による共鳴トンネルダイオード実現とその電子物性制御のための基盤技術の確立に必要不可欠となる大きな成果を得た。

Research Products
(16 results)

All Other

All Publications (16 results)

[Publications] J.Murota et al.: "Atomically controlled processing for group IV semiconductors"Surf. Interface Anal.. Vol.34. 423-431 (2002)
[Publications] O.Jintsugawa et al.: "Thermal nitridation of ultrathin SiO_2 on Si by NH_3"Surf. Interface Anal.. Vol.34. 456-459 (2002)
[Publications] Y.C.Jeong et al.: "Atomic-Layer Doping of N in Si Epitaxial Growth on Si(100) and its Thermal Stability"Proceedings of the 19th International Symposium on Silicon Material Science and Technology, 201th Meeting of the Electrochemical Society. 287-296 (2002)
[Publications] M.Mori et al.: "Si Epitaxial Growth on Atomic-Order Nitrided Si(100) Using an ECR Plasma"201st Meeting of The Electrochemical Society. Abs. No.402. (2002)
[Publications] J.Murota et al.: "Atomically Controlled Heterostructure Growth of Group IV Semiconductors"3rd "Trends in Nano Technology" International Conference (TNT2002). 377 (2002)
[Publications] J.Murota et al.: "SiGe Epitaxial CVD Technology for Si-Based Ultrasmall Devices (Invited Pater)"Meeting Abstracts of International Semiconductor Technology Conference (ISTC2002), The Electrochemical Society. Abs. No.53. (2002)
[Publications] D.Lee et al.: "0.1μm pMOSFETs with SiGe-Channel and B-Doped SiGe Source/Drain Layers"Extended Abstracts of the 2002 Int. Conf. on Solid State Devices and Materials (SSDM2002). 764-765 (2002)
[Publications] D.Lee et al.: "Fabrication of 0.12-μm SiGe-Channel MOSFET Containing High Ge Fraction with Ultrashallow Source/Drain Formed by Selective B-Doped SiGe CVD"First International SiGe Technology and Device Meeting (ISTDM2003). 17-18 (2003)
[Publications] J.Noh et al.: "Relationship between Total Impurity (B or P) and Carrier Concentrations in SiGe Epitaxial Film Produced by the Thermal Treatment"First International SiGe Technology and Device Meeting (ISTDM2003). 165-166 (2003)
[Publications] H.-S.Cho et al.: "Etching Characteristics of Impurity-Doped Si_<1-x>Ge_x Epitaxial Films Using Electron-Cyclotron-Resonance Chlorine Plasma"First International SiGe Technology and Device Meeting (ISTDM2003). 181-182 (2003)
[Publications] Y.C.Jeong et al.: "Epitaxial Growth of N Delta Doped Si Films on Si(100) by Alternately Supplied NH_3 and SiH_4"First International SiGe Technology and Device Meeting (ISTDM2003). 243-244 (2003)
[Publications] Y.Shimamune et al.: "Formation of Heavily P doped Si Epitaxial Film on Si(100) by Multiple Atomic-Layer Doping Technique"First International SiGe Technology and Device Meeting (ISTDM2003). 247-248 (2003)
[Publications] M.Fujiu et al.: "Carbon Effect on Thermal Stability of Si Atomic Layer on Ge(100)"First International SiGe Technology and Device Meeting (ISTDM2003). 249-250 (2003)
[Publications] D.Muto et al.: "Ar Plasma Irradiation Effects in Atomically Controlled Si Epitaxial Growth"First International SiGe Technology and Device Meeting (ISTDM2003). 251-252 (2003)
[Publications] D.Muto et al.: "Atomically Controlled Silane Reaction on Si(100) Using Ar Plasma Irradiation without Substrate Heating"3rd Int. Conf. on SiGe(C) Epitaxy and Heterostructures (ICSI3). 59-61 (2003)
[Publications] S.Takehiro et al.: "Characterization of High Ge Fraction SiGe-Channel MOSFET with Ultrashallow Source/Drain Formation by Selective B-Doped SiGe CVD"3rd Int. Conf. on SiGe(C) Epitaxy and Heterostructures (ICSI3). 179-181 (2003)

2002 Fiscal Year Annual Research Report

Si-Ge-C-N系原子層積層による共鳴トンネルダイオードの製作

Principal Investigator

櫻庭 政夫 東北大学, 電気通信研究所, 助教授 (30271993)

Research Products

[Publications] J.Murota et al.: "Atomically controlled processing for group IV semiconductors"Surf. Interface Anal.. Vol.34. 423-431 (2002)

[Publications] O.Jintsugawa et al.: "Thermal nitridation of ultrathin SiO_2 on Si by NH_3"Surf. Interface Anal.. Vol.34. 456-459 (2002)

[Publications] Y.C.Jeong et al.: "Atomic-Layer Doping of N in Si Epitaxial Growth on Si(100) and its Thermal Stability"Proceedings of the 19th International Symposium on Silicon Material Science and Technology, 201th Meeting of the Electrochemical Society. 287-296 (2002)

[Publications] M.Mori et al.: "Si Epitaxial Growth on Atomic-Order Nitrided Si(100) Using an ECR Plasma"201st Meeting of The Electrochemical Society. Abs. No.402. (2002)

[Publications] J.Murota et al.: "Atomically Controlled Heterostructure Growth of Group IV Semiconductors"3rd "Trends in Nano Technology" International Conference (TNT2002). 377 (2002)

[Publications] J.Murota et al.: "SiGe Epitaxial CVD Technology for Si-Based Ultrasmall Devices (Invited Pater)"Meeting Abstracts of International Semiconductor Technology Conference (ISTC2002), The Electrochemical Society. Abs. No.53. (2002)

[Publications] D.Lee et al.: "0.1μm pMOSFETs with SiGe-Channel and B-Doped SiGe Source/Drain Layers"Extended Abstracts of the 2002 Int. Conf. on Solid State Devices and Materials (SSDM2002). 764-765 (2002)

[Publications] D.Lee et al.: "Fabrication of 0.12-μm SiGe-Channel MOSFET Containing High Ge Fraction with Ultrashallow Source/Drain Formed by Selective B-Doped SiGe CVD"First International SiGe Technology and Device Meeting (ISTDM2003). 17-18 (2003)

[Publications] J.Noh et al.: "Relationship between Total Impurity (B or P) and Carrier Concentrations in SiGe Epitaxial Film Produced by the Thermal Treatment"First International SiGe Technology and Device Meeting (ISTDM2003). 165-166 (2003)

[Publications] H.-S.Cho et al.: "Etching Characteristics of Impurity-Doped Si_<1-x>Ge_x Epitaxial Films Using Electron-Cyclotron-Resonance Chlorine Plasma"First International SiGe Technology and Device Meeting (ISTDM2003). 181-182 (2003)

[Publications] Y.C.Jeong et al.: "Epitaxial Growth of N Delta Doped Si Films on Si(100) by Alternately Supplied NH_3 and SiH_4"First International SiGe Technology and Device Meeting (ISTDM2003). 243-244 (2003)

[Publications] Y.Shimamune et al.: "Formation of Heavily P doped Si Epitaxial Film on Si(100) by Multiple Atomic-Layer Doping Technique"First International SiGe Technology and Device Meeting (ISTDM2003). 247-248 (2003)

[Publications] M.Fujiu et al.: "Carbon Effect on Thermal Stability of Si Atomic Layer on Ge(100)"First International SiGe Technology and Device Meeting (ISTDM2003). 249-250 (2003)

[Publications] D.Muto et al.: "Ar Plasma Irradiation Effects in Atomically Controlled Si Epitaxial Growth"First International SiGe Technology and Device Meeting (ISTDM2003). 251-252 (2003)

[Publications] D.Muto et al.: "Atomically Controlled Silane Reaction on Si(100) Using Ar Plasma Irradiation without Substrate Heating"3rd Int. Conf. on SiGe(C) Epitaxy and Heterostructures (ICSI3). 59-61 (2003)

[Publications] S.Takehiro et al.: "Characterization of High Ge Fraction SiGe-Channel MOSFET with Ultrashallow Source/Drain Formation by Selective B-Doped SiGe CVD"3rd Int. Conf. on SiGe(C) Epitaxy and Heterostructures (ICSI3). 179-181 (2003)

櫻庭政夫東北大学, 電気通信研究所, 助教授 (30271993)