2000 Fiscal Year Annual Research Report

低角入射分子線エピタキシ

Research Project

Project/Area Number	12450006
Research Institution	Meijo University
Principal Investigator	西永頌名城大学, 理工学部, 教授 (10023128)
Co-Investigator(Kenkyū-buntansha)	成塚重弥名城大学, 理工学部, 助教授 (80282680)
Keywords	分子線エピタキシ / 低角入射分子線 / 選択成長 / 横方向成長 / 絶縁膜上半導体薄膜 / 面間拡散 / Si基板上の化合物半導体 / GaAs
Research Abstract	本研究においては、低角入射分子線エピタキシという新しい薄膜成長法を提案し、選択成長と組み合わせることにより非晶質絶縁膜上に無転位半導体薄膜を成長させることを目的としている。我々は、この成長法を低角入射マイクロチャネルエピタキシ(Low-Angle Incidence Microchannel Epitaxy,LAIMCE)と名付けた。この方法の主要なアイデアは、気相成長において二つの結晶面の間を成長原子が表面拡散により移動する現象(面間拡散と呼ぶ)を利用し、縦方向成長を抑制し、横方向成長を増加させることにより絶縁膜上に幅の広い無転位半導体薄膜を成長させるところにある。本年度は、この技術を確立するための基礎データをとった。先ず、分子線エピタキシにおける選択成長を実現するため、周期的供給分子線エピタキシ法につき研究し、GaAs、AlAsの選択成長が可能な条件を決定した。次に、低角入射分子線エピタキシの実験を行い、これが選択性の向上にも大きく役立つことを発見した。次にLAIMCEの角度依存性を調べるため、放射状のライシードパターンを用意し、結晶方位およびGa、Asの入射方向依存性を調べた。これによると、横方向成長幅は結晶方位にも強く依存し、側面が低指数面に一致するとファセットが形成され、大きな横方向成長が得られないことが分かった。また、成長結晶をAFMで調べた結果、最も良い成長層として厚さ70mm、横方向成長幅1.5mm、アスペクト比約20のものが絶縁膜上に得られた。以上の結果から、LAMICE技術は絶縁膜上に高品質半導体の超薄膜を成長させる技術として非常に有望であることが示された。

Research Products

(15 results)

All Other

All Publications (15 results)

[Publications] G.Bacchin and T.Nishinaga: "A new way to achieve both selective and lateral growth by molecular beam epitaxy : low angle incidence microchannel epitaxy"Journal of Crystal. 208. 1-10 (2000)
[Publications] D.Kishimoto,T.Noda,Y.Nakamura,H.Sakaki and T.Nishinaga: "Effect of substrate rotation on inter-surface diffusion in MBE for mesa-structure fabrication"J.Crystal Growth. 209. 591-598 (2000)
[Publications] T.Ogura and T.Nishinaga: "Efficiency difference in Ga adatom incorporation in MBE growth of GaAs with As2 and As4 molecular beams"Journal of Crystal Growth. 211. 416-420 (2000)
[Publications] D.Kishimoto,T.Nishinaga,S.Naritsuka,T.Noda,Y.Nakamura and H.Sakaki: "(111)B growth elimination in GaAs MBE of (001)-(111)B mesa structure by suppressing 2D-nucleation"Journal of Crystal Growth. 212. 373-378 (2000)
[Publications] T.Nishinaga and G.Bacchin: "Selective area MBE of GaAs,AlAs,and their alloys by periodic supply epitaxy"Thin Solid Films. 367. 6-12 (2000)
[Publications] D.Kishimoto,T.Ogura,A.Yamashiki,T.Nishinaga,S.Naritsuka and H.Sakaki: "2D-nucleation on (111)B micro-facet studied by microprobe-RHEED in GaAs MBE for mesa-structure fablication"Journal of Crystal Growth. 216. 1-5 (2000)
[Publications] A.Umeno,G.Bacchin and T.Nishinaga: "AFM analysis of sidewall formation in low angle incidence microchannel epitaxy of GaAs"Journal of Crystal Growth. 220. 355-363 (2000)
[Publications] G.Bacchin,A.Umeno and hinaga: "Selective and lateral growth of GaAs on GaAs/Si(001)by low angle incidence microchannel epitaxy"Proceedings of The Fourth Symposium on Atomic-Scale Surface and Interface Dynamics. 11-16 (2000)
[Publications] D.Kishimoto,T.Ogura,A.Yamshiki,T.Nishinaga,S.Naritsuka and H.Sakaki: "Real-time detection of 2D-nucleation on (111)B side microfacet of mesa-structurein MBE of GaAs"Proceedings of The Fourth symposium on Atomic-Scale Surface and Interface Dynamics. 17-22 (2000)
[Publications] T.Ogura,D.Kishimoto,and T.Nishinaga: "Effect of As molecular species on inter-surface diffusion in GsAs MBE for ridge structure fabrication"Proceedings of The Fourth symposium on Atomic-Scale Surface and Interface Dynamics. 23-28 (2000)
[Publications] A.Umeno,G.Bacchin and T.Nishinaga: "Dependence of lateral growth on sidewall formation in low angle incidence microchannel epitaxy of GaAs"Extended abstracts of the 19th Electronic Materials Symposium, Izu-Nagaoka. 83-86 (2000)
[Publications] G.Bacchin,A.Umeno and T.Nishinaga: "Selective and lateral growth dependence on Ga beam incidence angle in low angle incidence microchannel epitaxy of GaAs"Extended abstracts of the 19th Electronic Materials Symposium, Izu-Nagaoka. 87-90 (2000)
[Publications] G.Bacchin,A.Umeno and T.Nishinaga: "Lateral growth in molecular beam epitaxy by low angle incidence microchannel epitaxy"Applied Surface Science. 159/160. 360-367 (2000)
[Publications] K.Toyoda,Y.S.Hiraoka,S.Naritsuka and T.Nishinaga: "Ab initio calculations on the dissociative reaction of As4 molecules "Applied Surface Science,. 159/160. 270-276 (2000)
[Publications] T.Nishinaga: "Real-time monitoring of MBE microstructure fabrication by microprove-RHEED/SEM"The 4th Japan-Russia Seminar on Semiconductor Surfaces,13a-1,Nagoya. (2000)

2000 Fiscal Year Annual Research Report

低角入射分子線エピタキシ

Principal Investigator

西永 頌 名城大学, 理工学部, 教授 (10023128)

Research Products

[Publications] G.Bacchin and T.Nishinaga: "A new way to achieve both selective and lateral growth by molecular beam epitaxy : low angle incidence microchannel epitaxy"Journal of Crystal. 208. 1-10 (2000)

[Publications] D.Kishimoto,T.Noda,Y.Nakamura,H.Sakaki and T.Nishinaga: "Effect of substrate rotation on inter-surface diffusion in MBE for mesa-structure fabrication"J.Crystal Growth. 209. 591-598 (2000)

[Publications] T.Ogura and T.Nishinaga: "Efficiency difference in Ga adatom incorporation in MBE growth of GaAs with As2 and As4 molecular beams"Journal of Crystal Growth. 211. 416-420 (2000)

[Publications] D.Kishimoto,T.Nishinaga,S.Naritsuka,T.Noda,Y.Nakamura and H.Sakaki: "(111)B growth elimination in GaAs MBE of (001)-(111)B mesa structure by suppressing 2D-nucleation"Journal of Crystal Growth. 212. 373-378 (2000)

[Publications] T.Nishinaga and G.Bacchin: "Selective area MBE of GaAs,AlAs,and their alloys by periodic supply epitaxy"Thin Solid Films. 367. 6-12 (2000)

[Publications] D.Kishimoto,T.Ogura,A.Yamashiki,T.Nishinaga,S.Naritsuka and H.Sakaki: "2D-nucleation on (111)B micro-facet studied by microprobe-RHEED in GaAs MBE for mesa-structure fablication"Journal of Crystal Growth. 216. 1-5 (2000)

[Publications] A.Umeno,G.Bacchin and T.Nishinaga: "AFM analysis of sidewall formation in low angle incidence microchannel epitaxy of GaAs"Journal of Crystal Growth. 220. 355-363 (2000)

[Publications] G.Bacchin,A.Umeno and hinaga: "Selective and lateral growth of GaAs on GaAs/Si(001)by low angle incidence microchannel epitaxy"Proceedings of The Fourth Symposium on Atomic-Scale Surface and Interface Dynamics. 11-16 (2000)

[Publications] D.Kishimoto,T.Ogura,A.Yamshiki,T.Nishinaga,S.Naritsuka and H.Sakaki: "Real-time detection of 2D-nucleation on (111)B side microfacet of mesa-structurein MBE of GaAs"Proceedings of The Fourth symposium on Atomic-Scale Surface and Interface Dynamics. 17-22 (2000)

[Publications] T.Ogura,D.Kishimoto,and T.Nishinaga: "Effect of As molecular species on inter-surface diffusion in GsAs MBE for ridge structure fabrication"Proceedings of The Fourth symposium on Atomic-Scale Surface and Interface Dynamics. 23-28 (2000)

[Publications] A.Umeno,G.Bacchin and T.Nishinaga: "Dependence of lateral growth on sidewall formation in low angle incidence microchannel epitaxy of GaAs"Extended abstracts of the 19th Electronic Materials Symposium, Izu-Nagaoka. 83-86 (2000)

[Publications] G.Bacchin,A.Umeno and T.Nishinaga: "Selective and lateral growth dependence on Ga beam incidence angle in low angle incidence microchannel epitaxy of GaAs"Extended abstracts of the 19th Electronic Materials Symposium, Izu-Nagaoka. 87-90 (2000)

[Publications] G.Bacchin,A.Umeno and T.Nishinaga: "Lateral growth in molecular beam epitaxy by low angle incidence microchannel epitaxy"Applied Surface Science. 159/160. 360-367 (2000)

[Publications] K.Toyoda,Y.S.Hiraoka,S.Naritsuka and T.Nishinaga: "Ab initio calculations on the dissociative reaction of As4 molecules "Applied Surface Science,. 159/160. 270-276 (2000)

[Publications] T.Nishinaga: "Real-time monitoring of MBE microstructure fabrication by microprove-RHEED/SEM"The 4th Japan-Russia Seminar on Semiconductor Surfaces,13a-1,Nagoya. (2000)

西永頌名城大学, 理工学部, 教授 (10023128)