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2001 Fiscal Year Final Research Report Summary

Analysis and control of spin polarization of half-metallic ferromagnets by the use of runneling junctions

Research Project

Project/Area Number 12450009
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionNagoya University

Principal Investigator

ASANO Hidefumi  Nagoya University, School of Eng. Associate Professor, 工学研究科, 助教授 (50262853)

Co-Investigator(Kenkyū-buntansha) MATSUI Masaaki  Nagoya University, School of Eng. Professor, 工学研究科, 教授 (90013531)
Project Period (FY) 2000 – 2001
Keywordstunneling effect / half-metal / spin polarization / tunnel junction / La_<0.7>Sr_<0.3>MnO_3 / Sr_2FeMoO_6 / magneto-resistance / Fe_3O_4
Research Abstract

Tunnel junctions of Co_<0.9>Fe_<0.1>/SrTiO_3/La_<0.7>Sr_<0.3>MnO_3 (LSMO) were investigated in order to elucidate the factors affecting the spin polarization of interfaces of ferromagnets. Through the evaluation of junction magnetoresistance (MR) at 4.2 K and the high resolution Rutherford backscattering technique, it is found that the origin of inter facial degradation is the oxygen deficiencies in the SrTiO_3 barriers. The local densities of states at the Co_<0.9>Fe_<0.1> interface deduced from the bias voltage (V) dependence of MR conincide well with the results of the first principle calcualtion, indicating that the Co_<0.9>Fe_<0.1> interface is of high quality. In the LSMO juncttions, the MR effects disappear at temperatures of around 200 K well below the ferromagnetic transition temperature T_c of 360 K, which indicates that the spin polarization of LSMO interface goes down to zero at the temperatures.
As an alternative of LSMO, high T_c half-metallic ferromagnets Sr_2FeMoO_6 and Fe_3O_4 were investigated with respect to their fundamental properties. For thin films of Sr_2FeMoO_6, which were grown by sputtering in an Ar+H_2 gas atmosphere, the effects of lattice-mismatch induced strain and its relaxation process on the magnetization and transport properties have been elucidated, and high quality films with a full magnetization have been realized by measns of a lattice-matched buffer layer technique. This strongly indicates the half metalicity of Sr_2FeMoO_6 films at the ground state. Considering the high T_c (42O K) of Sr_2FeMoO_6, a high spin polarlization of 0.7 at RT is expected. Moreover, as for Fe_3O_4, high quality urtra thin films showing Verway transition have been obtained. For realization of high T_cjunctions, insulating barrier materials such as A1N is shown to be promising.

  • Research Products

    (17 results)

All Other

All Publications (17 results)

  • [Publications] 杉山幹人, 早川純, 伊藤顕知, 浅野秀文, 松井正顯他: "Co_<90>Fe_<10>/SrTiO_3/La_<0.7>Sr_<0.3>MnO_3接合におけるインバースTMR効果のバイアス依存性"日本応用磁気学会誌. (2002)

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  • [Publications] J.Hayakawa, S.Kokado, K.Itou, M.Sugiyama, H.Asano, M.Matsui: "The origin of bias voltage dependence in spin-valve type CoFe/SrTiO_3/La_<0.7>Sr_<0.3>MnO_3 magnetic tunnel junctions"J. Appl. Phys.. 91. (2002)

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  • [Publications] J.Hayakawa, S.Kokado, K.Itou, M.Sugiyama, H.Asano, M.Matsui: "Bias voltage dependence on tunnel magnetoresistance effect in spin-valve type MnIr/NiFe/Co_<90>Fe_<10>/SrTiO_3/La_<0.7>Sr_0.3>MnO_3 tunnel junctions"Jpn. J. Appl. Phys.. 41. (2002)

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  • [Publications] 杉山幹人, 早川純, 伊藤顕知, 浅野秀文, 松井正顯, 佐久間照正他: "ハーフメタル強磁性トンネル接合の磁気抵抗効果とその伝導物性"日本応用磁気学会誌. 25. 795-798 (2001)

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  • [Publications] H.Asano, M.Osugi, Y.Kohara, D.Higashida, M.Matsui: "Room-temperature magnetic and magneto-otpical properties of Sr_2FeMoO_6 thin films"Jpn. J. Appi. Phys.. 40. 4883-4883 (2001)

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  • [Publications] 大杉眞弘, 浅野秀文, 東田大介, 松井正顯: "マグネトロンスパッタ法により作製したSr_2FeMoO_6薄膜の磁性"日本応用磁気学会誌. 25. 887-890 (2001)

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  • [Publications] H. Asano, S. B. Ogale, J. Garrison, A. Orozco, Y. H. Li, E. Li, V. Smolyaninova, C. Galley, M. Downes, M. Rajeswari, R. Ramesh, and T. Venkatesan: "Pulsed-laser-deposited Sr_2FeMoO_<6-y> thin films : Positive and negative magnetoresistance regimes"Appl. Phys. Lett. 74. 3696-3698 (1999)

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  • [Publications] A. Orozco, S. B. Ogale, Y. H. Li, P. Fourier, Eric. Li, H.Asano, V. Smolyaninova, R. L. Greene, R. P. Sharma, R. Rarnesh, and T. Venkatesan: "Oscillatory exchange coupling and giant magnetpresistance in TiN/Fe_3O_4 superlattices"Phys. Rev. Lett. 23. 1680-1683 (1999)

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  • [Publications] H. Asano, K. Murase, M. Osugi, and M. Matsui: "Positive Tunnel Magnetoresistance Effect in Fe/La_<0.7> Sr_<0.3>MnO_3 Junctions"Proc. Of International Symposium on Nanoscale Magnetism and Transport. (ISNMT 2000). 48-49 (2000)

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  • [Publications] M. Arita, A. Sasaki,J. Hayakawa, H. Asano, and M. Matsui: "Transmission electron microscopy of La_<0.7>Ca_<0.3>MnO_3 thin films"J. Magn. Magn. Mat. 211. 84-90 (2000)

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  • [Publications] X. Liu, Y. Moritomo, A. Nakamura, and H. Asano: "Photoinduced resistivity change due to spin disorder in a manganite film"Jpn. J. Appl. Phys. 39. L1233-L1235 (2000)

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      「研究成果報告書概要(欧文)」より
  • [Publications] H. Asano, M. Osugi, Y. Kohara, D. Higashida, and M. Matsui: "Room-temperature magnetic and magneto-otpical properties of Sr_2FeMoO_6 thin films"Jpn. J. Appl. Phys. 40. 4883-4885 (2001)

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  • [Publications] S. Soeya, J. Hayakawa, H. Takahashi, K. Ito, C. Yamamoto, A. Kida, H. Asano, and M. Matsui: "Development of half-metallic ultrathin Fe_3O_4 thin films for spin-transport devices"Appl. Phys. Lett. 80. 823-825 (2002)

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  • [Publications] X. J. Liu, Y. Moriomo, A. Nakamura, and H. Asano: "Photoinduced spin-disorder in a ferromagnetic film"J. Phys. Chem. Solids. (2002)

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  • [Publications] M. Sugiyama, H. Asano, M. Matsui, J. Hayakawa, S. Kokado, M. Ichimura, K. Itou, and A. Sakuma: "Inverse TMR Effect in Co_<0.9>Fe_<0.1>/SrTiO_3/La_<0.7>Sr_<0.3> MnO_3 Tunnel Junctions"Mat. Res. Soc. Proc. (2002)

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  • [Publications] J. Hayakawa, M. Sugiyama, S. Kokado, M. Ichimura, K. Itou, A. Sakuma, H. Asano, and M. Matsui: "Bias voltage dependence on tunnel magnetoresistance effect in spin-valve type MnIr/NiFe/Co_<90>Fe_<10>/SrTi0_3/ La_<0.7>Sr_<0.3>MnO_3 tunnel junctions"Jpn. J. Appl. Phys. 91. (2002)

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      「研究成果報告書概要(欧文)」より
  • [Publications] J. Hayakawa, M. Sugiyama, S. Kokado, M. Ichimura, K. Itou, A. Sakuma, H. Asano, and M. Matsui: "The origin of bias dependence in spin-valve type CoFe /SrTiO_3/La_<0.7>Sr_<0.3>MnO_3 magnetic tunnel junctions"J. Appl. Phys. 41. (2002)

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Published: 2003-09-17  

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