2002 Fiscal Year Final Research Report Summary
Formation of Si Quasi-Single Crystal by Controlled Excess Vacancy
| Project/Area Number |
12450015
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Applied materials science/Crystal engineering
|
|---|
| Research Institution | Kyushu University |
|---|
Principal Investigator |
MIYAO Masanobu Kyushu University, Department of Electronics, Professor, 大学院・システム情報科学研究院, 教授 (60315132)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
KENJO Atsushi Kyushu University, Department of Electronics, Research Associate, 大学院・システム情報科学研究院, 助手 (20037899)
SADOH Taizoh Kyushu University, Department of Electronics, Associate Professor, 大学院・システム情報科学研究院, 助教授 (20274491)
|
|---|
| Project Period (FY) |
2000 – 2002
|
| Keywords | silicon / ion beam / solid-phase crystallization |
|---|
| Research Abstract |
Low temperature solid-phase crystallization (SPC) of a-SiGe on SiO2 has been investigated. The crystal nucleation of a-Si occurred at temperatures above 700℃, while the nucleation temperature was significantly decreased to 500℃ by using a-SiGe and ion irradiation during SPC. It was also shown that local doping of Ge at the a-Si/Si02 interface could control crystal orientation during SPC. These new polycrystal line SiGe films on Si02 can be used for the system-in-display and three-dimensional ULSI.
|
