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2002 Fiscal Year Final Research Report Summary

Formation of Si Quasi-Single Crystal by Controlled Excess Vacancy

Research Project

Project/Area Number 12450015
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionKyushu University

Principal Investigator

MIYAO Masanobu  Kyushu University, Department of Electronics, Professor, 大学院・システム情報科学研究院, 教授 (60315132)

Co-Investigator(Kenkyū-buntansha) KENJO Atsushi  Kyushu University, Department of Electronics, Research Associate, 大学院・システム情報科学研究院, 助手 (20037899)
SADOH Taizoh  Kyushu University, Department of Electronics, Associate Professor, 大学院・システム情報科学研究院, 助教授 (20274491)
Project Period (FY) 2000 – 2002
Keywordssilicon / ion beam / solid-phase crystallization
Research Abstract

Low temperature solid-phase crystallization (SPC) of a-SiGe on SiO2 has been investigated. The crystal nucleation of a-Si occurred at temperatures above 700℃, while the nucleation temperature was significantly decreased to 500℃ by using a-SiGe and ion irradiation during SPC. It was also shown that local doping of Ge at the a-Si/Si02 interface could control crystal orientation during SPC. These new polycrystal line SiGe films on Si02 can be used for the system-in-display and three-dimensional ULSI.

  • Research Products

    (12 results)

All Other

All Publications (12 results)

  • [Publications] M.Miyao et al.: "Ion Irradiated Stimulated Crystal Nucleation in Amorphous Si on Sio_2"Ext. Abst. 2000 International Conf. on Solid State Devices and Materials (SSDM). 442-443 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Miyao et al.: "Ion-beam Stimulated Solid-phase Crystallization of Amorphous Si on SiO_2"Thin Solid Films. Vol.383. 104-106 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Murakami et al.: "Dose Rate Dependence of Ion-Induced-Damage in Si Evaluated by Spectroscovic Ellipsometry"Solid State Phenomena. Vol.78-79. 341-344 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] I.Tsunoda et al.: "Influence of Ion Beam Irradiation on Solid-Phase Regrowth of Amorphous Si on SiO_2"Solid State Phenomena. Vol.78-79. 345-348 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] I.Tsunoda et al.: "Low-temperature solid-phase crystallization of a-Si_<1-x>Gex ON SiO_2 by ion-beam stimulation"Materials Science and Engineering B. Vol.89. 336-340 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Sadoh et al.: "Enhancement of Bulk Nucleation in Si_<1-x>Ge_x on SiO_2 for Low-Temperature Solid-Phase Crystallization"Thin Solid Films. Vol.427. 96-100 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M. Miyao et al.: "Ion Irradiated Stimulated Crystal Nucleation in Amorphous Si on SiO2"Ext. Abst. 2000 International Conf. on Solid State Devices and Materials (SSDM). 442-443 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Miyao et al.: "Ion-beam Stimulated Solid-phase Crystallization of Amorphous Si on SiO2"Thin Solid Films. Vol.383. 104-106 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y. Murakami et al.: "Dose Rate Dependence of Ion-Induced-Damage in Si Evaluated by Spectroscopic Ellipsometry"Solid State Phenomena. Vol.78-79. 314-344 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] I. Tsunoda et al.: "Influence of Ion Beam Irradiation on Solid-Phase Regrowth of Amorphous Si on SiO2"Solid State Phenomena. Vol.78-79. 345-348 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] I. Tsunoda et al.: "Low-temperature solid-phase crystallization of a-Sil-XGeX ON SiO2 by ion-beam stimulation"Materials Science and Engineering B. Vol. 89. 336-340 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Sadoh et al.: "Enhancement of Bulk Nucleation in Sil-xGex on SiO2 for Low-Temperature Solid-Phase Crystallization"Thin Solid Films. Vol.427. 96-100 (2003)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2004-04-14  

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