2002 Fiscal Year Final Research Report Summary
(Ba, Sr)TiO_3 Thin Film Preparation by Liquid Source Chemical Vapor Deposition.
| Project/Area Number |
12450319
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
反応・分離工学
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| Research Institution | HIROSHIMA UNIVERSITY |
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Principal Investigator |
OKUYAMA Kikuo Hiroshima University, Graduate School of Engineering, Professor, 大学院・工学研究科, 教授 (00101197)
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| Co-Investigator(Kenkyū-buntansha) |
MURAKAMI Takeshi Ebara Corporation, Researcher, 精密電子事業部, 研究員
SHIMADA Manabu Hiroshima University, Graduate School of Engineering, Associate Professor, 大学院・工学研究科, 助教授 (70178953)
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| Project Period (FY) |
2000 – 2002
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| Keywords | Chemical Vapor Deposition / Dielectric material / Thin film / Liquid Source / Gas Phase Reaction / Grain / Metal Organic / Transport Phenomena |
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| Research Abstract |
We designed a chemical vapor deposition (CVD) reactor for film preparation of dielectric materials by a liquid source chemical vapor deposition (LSCVD) method. A film formation mechanism has been investigated experimentally and theoretically using a numerical simulation. We clarified following results.
Experimental approach
1) We designed a singie wafer CVD reactor with maximum operating temperature of 800℃ and measured temperature profiles and pressures of the reactor.
2) Dielectric films such as titanium dioxide (TiO_2), barium titanate (BaTiO_3), and barium strontium titanate (BST) were prepared on silicon wafers. Their film thicknesses and surface morphologies and chemical compositions as a function of radial direction were measured by a field emission scanning electron microscopy (FE-SEM) and inductively coupled plasma atomic emission spectroscopy (ICP-AES), respectively. Crystalline structures were analyzed by x-ray diffraction (XRD) and transmission electron microscopy.
3) Thus, the effects of operating conditions, such as precursor flow rates, operating temperatures, and pressures on the film deposition rate, chemical compositions of the surface morphology, and crystalline structures were investigated.
Theoretical approach
1) The film formation mechanisms and film deposition rate were demonstrated by the numerical simulation considering energy and mass transfer, diffusion, chemical reactions in a quartz tubular reactor. The suggested film deposition rates of Ba, Sr, and Ti sources were compared to the experimental results.
2) The suggested chemical reaction kinetics and the reaction rate constants can demonstrate the film deposition rate in the single wafer type CVD reactor as well.
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